TZM5230B-GS08 >
TZM5230B-GS08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 500MW SOD80
16945 Pcs New Original In Stock
Zener Diode 4.7 V 500 mW ±5% Surface Mount SOD-80 MiniMELF
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TZM5230B-GS08 Vishay General Semiconductor - Diodes Division
5.0 / 5.0 - (55 Ratings)

TZM5230B-GS08

Product Overview

12914417

DiGi Electronics Part Number

TZM5230B-GS08-DG
TZM5230B-GS08

Description

DIODE ZENER 4.7V 500MW SOD80

Inventory

16945 Pcs New Original In Stock
Zener Diode 4.7 V 500 mW ±5% Surface Mount SOD-80 MiniMELF
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.0979 0.0979
  • 200 0.0379 7.5800
  • 500 0.0366 18.3000
  • 1000 0.0360 36.0000
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TZM5230B-GS08 Technical Specifications

Category Diodes, Zener, Single Zener Diodes

Packaging Tape & Reel (TR)

Series -

Product Status Active

Voltage - Zener (Nom) (Vz) 4.7 V

Tolerance ±5%

Power - Max 500 mW

Impedance (Max) (Zzt) 19 Ohms

Current - Reverse Leakage @ Vr 5 µA @ 2 V

Voltage - Forward (Vf) (Max) @ If 1.1 V @ 200 mA

Operating Temperature 175°C

Grade -

Qualification -

Mounting Type Surface Mount

Package / Case DO-213AC, MINI-MELF, SOD-80

Supplier Device Package SOD-80 MiniMELF

Base Product Number TZM5230

Datasheet & Documents

HTML Datasheet

TZM5230B-GS08-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0050

Additional Information

Other Names
TZM5230B-GS08TR
TZM5230BGS08
TZM5230B-GS08DKR
TZM5230B-GS08CT
Standard Package
2,500

Alternative Parts

View Details
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DL5230B-TP
Micro Commercial Co
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TZM5230C-GS08
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Reviews

5.0/5.0-(Show up to 5 Ratings)
바람***같은날
Dec 02, 2025
5.0
DiGi Electronics의 고객 지원은 다른 곳과 비교할 수 없을 만큼 훌륭합니다. 늘 도움을 받아서 감사합니다.
夜***者
Dec 02, 2025
5.0
他們的價格屬於親民範圍,客服更是熱心又有耐心。
Cerisi***nFleurs
Dec 02, 2025
5.0
Une entreprise fiable qui privilégie la satisfaction après-vente et la promptitude de livraison.
ね***らし
Dec 02, 2025
5.0
どの配送も予定通りで、包装も丁寧なので安心です。
Hidd***ander
Dec 02, 2025
5.0
DiGi Electronics offers excellent value, making it my go-to online tech store.
Velv***uest
Dec 02, 2025
5.0
The professionalism and speed of their service left a great impression on me.
Sunsh***Vibes
Dec 02, 2025
5.0
Their after-sales service reflects their genuine concern for customer happiness.
Vivi***eams
Dec 02, 2025
5.0
Their friendly staff and reasonable prices make shopping a pleasure.
Infinite***piration
Dec 02, 2025
5.0
Their attention to packaging detail shows they care about customer experience, despite their low prices.
Coo***bes
Dec 02, 2025
5.0
The confidence I have in Di Digi Electronics grows thanks to their reliable after-sales support.
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Frequently Asked Questions (FAQ)

Can the TZM5230B-GS08 Zener diode be safely used as a voltage reference in a 3.3V microcontroller power supply design, and what are the risks of long-term drift or thermal instability?

The TZM5230B-GS08, with its 4.7V Zener voltage, is not ideal for direct 3.3V regulation but can serve as a stable reference in a resistive divider or feedback network for LDOs or shunt regulators. However, its ±5% tolerance means the actual Vz could range from 4.465V to 4.935V, introducing initial accuracy errors. At elevated temperatures (up to 175°C), Zener voltage drift can exceed 2–3%, especially near the 'knee' region. For precision applications, consider temperature-compensated references like the TL431. If using the TZM5230B-GS08, ensure adequate bias current (>1mA) to stay above the knee and minimize dynamic impedance effects (19Ω max), which can amplify noise under load transients.

What are the key reliability concerns when replacing a through-hole 1N5231B with the surface-mount TZM5230B-GS08 in a high-vibration industrial environment?

While the TZM5230B-GS08 is electrically equivalent to the 1N5231B (both 4.7V, 500mW Zeners), the SOD-80 MiniMELF package introduces mechanical reliability risks in high-vibration settings. The MiniMELF’s cylindrical shape and small solder joints are more prone to fatigue cracking compared to axial-leaded through-hole packages. To mitigate this, use conformal coating, ensure proper pad design with adequate solder fillets, and consider strain relief via PCB layout (e.g., avoid placing near board edges or mounting points). Additionally, verify that reflow profiles don’t induce thermal stress—MSL 1 rating allows unlimited floor life, but repeated thermal cycling can degrade joint integrity over time.

How does the TZM5230B-GS08 compare to the CDLL4625 in terms of surge handling and transient response for ESD protection in RS-485 transceiver circuits?

The TZM5230B-GS08 has a lower peak pulse power rating (typically ~500mW continuous, with limited surge capability) compared to the CDLL4625, which is specifically rated for higher transient energy absorption. In RS-485 applications exposed to ESD or inductive transients, the TZM5230B-GS08 may fail prematurely unless paired with a TVS diode or series current-limiting resistor. The CDLL4625 offers better robustness due to optimized junction design for transient clamping. If using the TZM5230B-GS08, add a 10–100Ω resistor in series and ensure fast-acting TVS diodes (e.g., SMAJ5.0A) handle the bulk of transient energy—relying solely on the Zener increases risk of latent failure or increased leakage over time.

Is it safe to parallel two TZM5230B-GS08 diodes to increase power handling in a 1W shunt regulator application, and what derating considerations apply?

Paralleling TZM5230B-GS08 diodes is not recommended due to inherent Vz mismatch (±5% tolerance), which causes significant current imbalance—one diode may carry most of the load, leading to thermal runaway. Even with matched bins, MiniMELF packages have poor thermal coupling, exacerbating imbalance. For 1W applications, select a single higher-power Zener like the BZX84C4V7 (1W, SOT-23) or use an active regulator. If paralleling is unavoidable, add individual ballast resistors (e.g., 10–22Ω, 1% tolerance) in series with each diode and derate total power to ≤60% of combined rating (i.e., <600mW total) to account for uneven sharing and ambient temperature effects above 25°C.

Can the TZM5230B-GS08 be used in reverse polarity protection circuits, and how does its forward voltage and leakage current impact low-power battery-operated systems?

The TZM5230B-GS08 is not suitable for reverse polarity protection in standard configurations due to its 1.1V forward drop at 200mA—too high for efficient blocking. In series protection, this drop wastes power and reduces available system voltage; in shunt configurations, it offers no advantage over dedicated MOSFET-based solutions. Additionally, its 5µA reverse leakage at 2V becomes significant in ultra-low-power designs (e.g., IoT sensors), where cumulative leakage across multiple components can drain batteries prematurely. For battery-sensitive applications, use low-Vf Schottky diodes (e.g., BAT54) or ideal diode controllers. The TZM5230B-GS08 should be reserved for voltage regulation or clamping roles where its Zener characteristics are essential, not for power path protection.

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