RF03N1R5C250CT >
RF03N1R5C250CT
Walsin Technology Corporation
CAP CER 1.5PF 25V C0G/NP0 0201
95175 Pcs New Original In Stock
1.5 pF ±0.25pF 25V Ceramic Capacitor C0G, NP0 0201 (0603 Metric)
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RF03N1R5C250CT Walsin Technology Corporation
5.0 / 5.0 - (335 Ratings)

RF03N1R5C250CT

Product Overview

10393285

DiGi Electronics Part Number

RF03N1R5C250CT-DG
RF03N1R5C250CT

Description

CAP CER 1.5PF 25V C0G/NP0 0201

Inventory

95175 Pcs New Original In Stock
1.5 pF ±0.25pF 25V Ceramic Capacitor C0G, NP0 0201 (0603 Metric)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 100 0.0058 0.5800
  • 1000 0.0045 4.5000
  • 3000 0.0039 11.7000
  • 15000 0.0031 46.5000
  • 45000 0.0027 121.5000
  • 105000 0.0026 273.0000
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RF03N1R5C250CT Technical Specifications

Category Ceramic Capacitors

Manufacturer Walsin Technology

Packaging Tape & Reel (TR)

Series RF

Product Status Active

Capacitance 1.5 pF

Tolerance ±0.25pF

Voltage - Rated 25V

Temperature Coefficient C0G, NP0

Operating Temperature -55°C ~ 125°C

Features High Q, Low Loss, Ultra Low ESR

Ratings -

Applications RF, Microwave, High Frequency

Failure Rate -

Mounting Type Surface Mount, MLCC

Package / Case 0201 (0603 Metric)

Size / Dimension 0.024" L x 0.012" W (0.60mm x 0.30mm)

Height - Seated (Max) -

Thickness (Max) 0.013" (0.33mm)

Lead Spacing -

Lead Style -

Datasheet & Documents

HTML Datasheet

RF03N1R5C250CT-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8532.24.0020

Additional Information

Other Names
1292-RF03N1R5C250CTTR
Standard Package
15,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
快***布
Dec 02, 2025
5.0
DiGi Electronics的出貨時間十分準時,從未讓我失望過。
Bri***Ámor
Dec 02, 2025
5.0
Leur équipe après-vente m’a toujours apporté un soutien efficace et rapide, même après plusieurs achats.
か***ん
Dec 02, 2025
5.0
DiGi Electronicsさんの対応はいつも迅速で丁寧です。ありがとうございます!
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Dec 02, 2025
5.0
Their wide selection ensures I always discover new and innovative tech solutions.
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Dec 02, 2025
5.0
Their commitment to logistics excellence is evident in every delivery.
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Dec 02, 2025
5.0
The reasonable prices at DiGi Electronics make it easier for me to pursue my tech passion.
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Dec 02, 2025
5.0
The logistics updates were frequent and detailed, making me feel valued as a customer.
Seren***lleys
Dec 02, 2025
5.0
Delivery was prompt, arriving earlier than anticipated, which was delightful.
Crys***Haven
Dec 02, 2025
5.0
Their products offer great performance at a price point that fits my budget.
Mist***adow
Dec 02, 2025
5.0
Their support team’s expertise gives me confidence in their brand.
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Frequently Asked Questions (FAQ)

What are the key design risks when using the RF03N1R5C250CT in a 5G mmWave front-end matching network, and how can layout parasitics affect performance?

The RF03N1R5C250CT’s ultra-low ESR and C0G/NP0 stability make it suitable for mmWave applications, but its 0201 footprint is highly sensitive to parasitic inductance from PCB trace routing and pad geometry. Even 0.1 nH of unintended inductance can create resonant peaks above 6 GHz, degrading return loss and gain flatness. To mitigate this, use coplanar waveguide routing with grounded vias placed within 0.2 mm of the capacitor pads, minimize trace length to <0.3 mm, and avoid right-angle bends. Always validate with EM simulation of the full land pattern and surrounding ground plane.

Can the RF03N1R5C250CT be safely replaced with a Murata GRM0335C1H1R5WA01D in a high-Q RF filter, and what performance trade-offs should I expect?

While both the RF03N1R5C250CT and Murata GRM0335C1H1R5WA01D are 1.5 pF C0G 0201 capacitors rated for 25V, the Walsin part offers marginally lower ESR (<10 mΩ typical) and better Q-factor above 3 GHz due to refined electrode geometry. The Murata alternative may introduce ~0.02 dB additional insertion loss at 5.8 GHz and slightly higher sensitivity to board flexure due to internal construction differences. If replacing, re-tune the matching network and verify phase noise impact in oscillator circuits—especially in sensitive PLL loops where Q directly affects phase stability.

How does soldering profile affect the long-term reliability of the RF03N1R5C250CT in automotive radar applications operating at 77 GHz?

In automotive environments, thermal cycling between -40°C and +125°C can induce mechanical stress in the RF03N1R5C250CT due to CTE mismatch between the ceramic body and PCB. Excessive peak reflow temperatures (>260°C) or rapid cooling rates can microcrack the dielectric, leading to capacitance drift or open-circuit failure over time. Use a controlled reflow profile with peak temperature ≤250°C, time above liquidus <60 seconds, and slow ramp rates (<2°C/sec). Additionally, apply underfill or conformal coating if the module undergoes vibration stress, as 0201 components are prone to fatigue at high frequencies under mechanical shock.

Is the RF03N1R5C250CT suitable for use in a voltage-controlled oscillator (VCO) tank circuit, and how does DC bias affect its effective capacitance?

Yes, the RF03N1R5C250CT is well-suited for VCO tank circuits due to its C0G/NP0 dielectric, which exhibits negligible capacitance variation with DC bias—typically <±0.1% up to 25V. This stability ensures consistent oscillation frequency and low phase noise. However, ensure the total DC voltage across the capacitor (including bias and signal swing) does not exceed 25V, as breakdown can occur abruptly without warning. For tunable applications, pair it with a high-Q varactor; avoid using it in place of a varactor, as C0G materials have near-zero voltage sensitivity, making them ineffective for frequency tuning.

What integration challenges arise when placing the RF03N1R5C250CT near power amplifiers in a compact RF module, and how can crosstalk be minimized?

The RF03N1R5C250CT’s small 0201 size increases susceptibility to electromagnetic coupling from nearby high-power traces or PA output stages, especially above 3 GHz. Magnetic field coupling can induce unwanted resonances or detune matching networks. Maintain a minimum 1.5 mm clearance from high-current RF paths, use grounded guard traces between sensitive nodes, and orient the capacitor perpendicular to high-dI/dt traces to reduce mutual inductance. Additionally, ensure the ground return path beneath the capacitor is unbroken—avoid splitting ground planes, as this increases loop inductance and degrades high-frequency performance, potentially causing instability in feedback networks.

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