SIS410DN-T1-GE3 Vishay Siliconix
5.0 / 5.0 - (161 Ratings)

SIS410DN-T1-GE3

Product Overview

13009418

DiGi Electronics Part Number

SIS410DN-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIS410DN-T1-GE3

Description

MOSFET N-CH 20V 35A PPAK 1212-8

Inventory

4436 Pcs New Original In Stock
N-Channel 20 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Single FETs, MOSFETs
SIS410DN-T1-GE3 Datasheet
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

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IMPORTANT NOTICE

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 3000 0.38 1129.74
  • 6000 0.36 2162.25
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SIS410DN-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging Tape & Reel (TR)

Series TrenchFET®

Packaging Tape & Reel (TR)

Part Status Active

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 20 V

Current - Continuous Drain (Id) @ 25°C 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 10 V

FET Feature -

Power Dissipation (Max) 3.8W (Ta), 52W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® 1212-8

Package / Case PowerPAK® 1212-8

Base Product Number SIS410

Datasheet & Documents

Datasheets

Download SIS410DN-T1-GE3 Product Specification (PDF)
HTML Datasheet

SIS410DN-T1-GE3-DG
DIGI Certification
ISO 209001_2015
ISO 209001_2015
ISO 14001_2015
ISO 2014001_2015
ISO 45001_2018
ISO 2045001_2018
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ASA Certificate
ASA Certificate
UKAS
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ESD Certificate
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