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SQ3426EEV-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 7A 6TSOP
15134 Pcs New Original In Stock
N-Channel 60 V 7A (Tc) Surface Mount 6-TSOP
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5.0 / 5.0
- (240 Ratings)
SQ3426EEV-T1-GE3
Product Overview
12786534
DiGi Electronics Part Number
SQ3426EEV-T1-GE3-DGManufacturer
Vishay Siliconix
SQ3426EEV-T1-GE3
Description
MOSFET N-CH 60V 7A 6TSOPInventory
15134 Pcs New Original In Stock
N-Channel 60 V 7A (Tc) Surface Mount 6-TSOP
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
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SQ3426EEV-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Rds On (Max) @ Id, Vgs
42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 30 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SQ3426
Datasheet & Documents
HTML Datasheet
SQ3426EEV-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
SQ3426EEVT1GE3
SQ3426EEV-T1-GE3CT
SQ3426EEV-T1-GE3DKR
SQ3426EEV-T1-GE3TR
Standard Package
3,000
Alternative Parts
View DetailsPART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Ihre Logistikprozesse sind vorbildlich, was meine Geschäftsprozesse erheblich erleichtert.
Dec 02, 2025
The speed and efficiency of their delivery process are impressive.
Dec 02, 2025
The website layout makes it simple to access customer support options whenever needed.
Dec 02, 2025
Excellent post-sales support makes working with them extremely reliable.
Dec 02, 2025
I've appreciated their quick responses and effective solutions from support.
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Frequently Asked Questions (FAQ)
Can I use the SQ3426EEV-T1-GE3 in a high-temperature PCB environment with continuous 7A drain current, and what thermal design considerations should I follow?
The SQ3426EEV-T1-GE3 is rated for 7A continuous drain current at TC = 25°C, which means performance drops significantly with higher board temperatures. In real-world designs, exceeding 60°C case temperature risks thermal throttling or failure. To mitigate this, ensure at least 2 oz copper on the PCB with thermal vias to inner ground planes, and consider derating current to 4–5A under high ambient conditions. Avoid relying solely on datasheet’s 7A rating without verifying thermal layout in your system.
Is the SQ3426EEV-T1-GE3 suitable for replacing the DMN6040SVT-7 in an existing 24V motor control circuit, and are there any critical differences in switching performance?
While both the SQ3426EEV-T1-GE3 and DMN6040SVT-7 are 60V N-channel MOSFETs in SOT-23-6 packages, the SQ3426EEV-T1-GE3 offers lower Rds(on) (42mΩ vs. 75mΩ) and gate charge (12nC vs. 19nC), making it better for high-efficiency switching. However, the SQ3426EEV-T1-GE3 is marked as obsolete, posing long-term supply risk. Verify compatibility in your gate driver circuit—its lower Qg improves speed but may increase crosstalk sensitivity in parallel configurations. Use with caution in new designs due to availability.
What are the key reliability risks when using the SQ3426EEV-T1-GE3 in battery-powered devices subject to voltage transients?
The SQ3426EEV-T1-GE3 has a 60V Vdss rating, which leaves limited margin in 48V battery systems where load dump or inductive kick can cause transient spikes above 60V. Operating near the absolute max Vdss increases wear-out risk and potential avalanche breakdown. For robustness, add a transient voltage suppression (TVS) diode or consider a 80V-rated alternative. Also, ensure Vgs does not exceed ±20V during fast switching; use a dedicated driver with clamping if needed.
How does the low gate charge (12nC) of the SQ3426EEV-T1-GE3 impact power efficiency in high-frequency DC-DC converters, and are there any layout trade-offs?
The SQ3426EEV-T1-GE3’s low 12nC gate charge reduces switching losses, enabling efficient operation in high-frequency (e.g., 300kHz–1MHz) buck converters. However, low Qg increases sensitivity to PCB parasitics—poor layout can cause unintended turn-on or oscillation. Use short, direct gate traces, a Kelvin source connection if possible, and consider adding a 4.7Ω gate resistor to damp ringing. Pair with a low-impedance driver for optimal control.
Can the SQ3426AEEV-T1_GE3 be used as a direct pin-to-pin and performance replacement for the SQ3426EEV-T1-GE3 in a high-volume production design?
The SQ3426AEEV-T1_GE3 is a close variant and generally pin-compatible with the SQ3426EEV-T1-GE3, but verify threshold voltage (Vgs(th)) and Rds(on) specs under your operating conditions—typically the 'A' version may have tighter tolerances. However, both are obsolete, making them unsuitable for new high-volume designs due to supply chain risk. Consider redesigning with active-status alternatives like Infineon BSC059N06NS or ON Semi NTD60N03L, which offer similar performance and reliable sourcing.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SQ3426EEV-T1-GE3 CAD Models
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