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SISS32DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 17.4A/63A PPAK
205214 Pcs New Original In Stock
N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
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5.0 / 5.0
- (521 Ratings)
SISS32DN-T1-GE3
Product Overview
12786875
DiGi Electronics Part Number
SISS32DN-T1-GE3-DGManufacturer
Vishay Siliconix
SISS32DN-T1-GE3
Description
MOSFET N-CH 80V 17.4A/63A PPAKInventory
205214 Pcs New Original In Stock
N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Quantity
Minimum 1
Minimum 1
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SISS32DN-T1-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
17.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1930 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Base Product Number
SISS32
Datasheet & Documents
HTML Datasheet
SISS32DN-T1-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH info available upon request
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
SISS32DN-T1-GE3TR
SISS32DN-T1-GE3DKR
SISS32DN-T1-GE3CT
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
빠른 배송과 품질 좋은 제품 덕분에 여러 번 구매하고 있습니다.
Dec 02, 2025
Besonders schätze ich die schnelle Bearbeitungszeit bei DiGi Electronics; meine Bestellungen wurden immer frühzeitig versandt.
Dec 02, 2025
Their prices are competitive, making it easy to choose DiGi Electronics over other brands.
Dec 02, 2025
I appreciate how DiGi Electronics makes high-quality remote work solutions affordable.
Dec 02, 2025
I appreciate their transparent and helpful communication after sales.
Dec 02, 2025
Shipping is always quick, ensuring minimal wait time.
Dec 02, 2025
The support team at DiGi Electronics is friendly and very professional.
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Frequently Asked Questions (FAQ)
Can the SISS32DN-T1-GE3 MOSFET be safely used in a 48V industrial motor drive application with frequent start-stop cycles, and what thermal management precautions are necessary to avoid premature failure?
Yes, the SISS32DN-T1-GE3 is suitable for 48V motor drive applications due to its 80V Vdss rating and low Rds(on) of 7.2mΩ at 10V Vgs, which minimizes conduction losses. However, frequent start-stop cycles increase thermal stress due to repetitive inrush currents and switching losses. To mitigate risk, ensure proper heatsinking—especially since the PowerPAK® 1212-8S package relies on PCB copper for heat dissipation—and maintain junction temperature below 125°C during operation. Use thermal vias under the device and consider a grounded metal core or external heatsink if duty cycles exceed 50%. Monitor transient thermal impedance (Zth) in pulsed conditions, as the 65.7W Tc rating assumes ideal case cooling rarely achieved in practice.
What are the key risks when replacing the SISS32DN-T1-GE3 with a competitor like the Infineon BSC0702NSATMA1 in a high-efficiency DC-DC converter design?
While the Infineon BSC0702NSATMA1 offers lower Rds(on) (2.8mΩ), direct replacement with the SISS32DN-T1-GE3 introduces several risks: first, the gate charge (Qg) of the SISS32DN-T1-GE3 is 42nC at 10V versus ~25nC for the Infineon part, which may overload existing gate drivers not sized for higher drive current, leading to slow turn-on/off and increased switching losses. Second, the PowerPAK® 1212-8S has a different pinout and thermal pad layout than the TDSON-8 used by Infineon, requiring PCB rework. Finally, the SISS32DN-T1-GE3’s higher input capacitance (1930pF vs. ~1200pF) can cause instability in high-frequency (>500kHz) converters unless driver impedance and layout parasitics are re-evaluated.
How does the SISS32DN-T1-GE3 perform in parallel configurations for higher current applications, and what layout considerations are critical to ensure current sharing?
The SISS32DN-T1-GE3 can be paralleled to increase current handling, but uneven current sharing due to threshold voltage (Vgs(th)) mismatch (±0.5V typical spread) and Rds(on) temperature coefficient can lead to thermal runaway. To ensure reliability, use individual gate resistors (1–10Ω) for each device to dampen oscillations and improve dynamic sharing. Place devices in close proximity with symmetrical copper pours and thermal vias to equalize temperatures. Avoid shared source inductance by using Kelvin connections for gate drives. Monitor that total power dissipation per device stays within the 5W (Ta) limit unless actively cooled—otherwise, derating is essential above 70°C ambient.
Is the SISS32DN-T1-GE3 reliable for automotive 12V battery systems exposed to load dump transients, and does it require additional protection circuitry?
The SISS32DN-T1-GE3’s 80V Vdss provides a reasonable safety margin over standard 12V systems, but ISO 7637-2 load dump pulses can exceed 60V and last hundreds of milliseconds—pushing the device near its absolute maximum rating. Without clamping, repeated exposure risks oxide degradation or avalanche failure, even though the part lacks explicit avalanche energy specs. For reliable operation, include a TVS diode (e.g., SMAJ40A) rated for 40V standoff and capable of absorbing 100J+ transient energy. Additionally, ensure the gate is protected with a Zener clamp (e.g., 12V) to prevent Vgs overshoot from inductive kickback, which could exceed the ±20V limit during hot-plug events.
What design trade-offs should be considered when using the SISS32DN-T1-GE3 in a space-constrained, high-reliability telecom power supply operating at 1MHz switching frequency?
At 1MHz, the SISS32DN-T1-GE3’s relatively high gate charge (42nC) and input capacitance (1930pF) result in significant gate drive losses—approximately 0.42W per device at 10V drive and 1MHz—which may necessitate a dedicated high-current gate driver (e.g., UCC27531) to maintain efficiency. The low Rds(on) helps offset conduction losses, but switching losses dominate at this frequency. Thermal performance becomes critical: the 5W Ta rating assumes minimal airflow, so forced convection or thick copper layers (2oz+) are needed. Also, the PowerPAK® 1212-8S’s small footprint aids density, but tight layouts increase parasitic inductance, risking voltage overshoot during turn-off. Use snubbers or active clamp circuits and validate stability with double-pulse testing under full load.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SISS32DN-T1-GE3 CAD Models
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