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SIHG16N50C-E3
Vishay Siliconix
MOSFET N-CH 500V 16A TO247AC
1303 Pcs New Original In Stock
N-Channel 500 V 16A (Tc) 250W (Tc) Through Hole TO-247AC
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Minimum 1
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5.0 / 5.0
- (50 Ratings)
SIHG16N50C-E3
Product Overview
12786075
DiGi Electronics Part Number
SIHG16N50C-E3-DGManufacturer
Vishay Siliconix
SIHG16N50C-E3
Description
MOSFET N-CH 500V 16A TO247ACInventory
1303 Pcs New Original In Stock
N-Channel 500 V 16A (Tc) 250W (Tc) Through Hole TO-247AC
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
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SIHG16N50C-E3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG16
Datasheet & Documents
HTML Datasheet
SIHG16N50C-E3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
500
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Vielen Dank an das Team für den großartigen Service und die zügige Lieferung.
Dec 02, 2025
They dispatched our order within hours, and it arrived exactly as promised.
Dec 02, 2025
DiGi Electronics is my preferred store because of their unbeatable prices and timely shipping.
Dec 02, 2025
I’m impressed by the quality standards maintained by DiGi Electronics.
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Frequently Asked Questions (FAQ)
What are the main features of the Vishay SIHG16N50C-E3 N-Channel MOSFET?
The Vishay SIHG16N50C-E3 is a high-voltage N-channel MOSFET with a drain-source voltage of 500V, a continuous drain current of 16A, and a power dissipation of up to 250W. It is designed for high-speed switching applications and features a TO-247AC package for robust mounting.
Is the Vishay SIHG16N50C-E3 suitable for power switching in high-voltage circuits?
Yes, this MOSFET is specifically designed for high-voltage power switching, capable of handling up to 500V and high current loads, making it ideal for power supplies, motor drives, and other high-voltage electronic circuits.
What are the key specifications of the Vishay SIHG16N50C-E3 MOSFET?
Key specifications include a drain-source voltage of 500V, continuous drain current of 16A at 25°C, a maximum Rds On of 380 milliohms at 8A and 10V gate drive, and a gate charge of 68 nC, suitable for efficient switching performance.
Is the Vishay SIHG16N50C-E3 compatible with standard circuit designs and how is it mounted?
This MOSFET uses a through-hole mounting type with a TO-247AC package, compatible with standard PCB designs requiring robust, high-power components, and is RoHS3 compliant for environmentally friendly applications.
Does the Vishay SIHG16N50C-E3 come with warranty or after-sales support?
The MOSFET is a new, original product in stock, supported by the manufacturer with reliable sourcing. For specific warranty or after-sales support, please contact the distributor or manufacturer directly.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
SIHG16N50C-E3 CAD Models
Vishay Siliconix SIHG16N50C-E3 PCB symbols & footprints
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