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SIHB33N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A D2PAK
19807 Pcs New Original In Stock
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
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5.0 / 5.0
- (101 Ratings)
SIHB33N60EF-GE3
Product Overview
12787586
DiGi Electronics Part Number
SIHB33N60EF-GE3-DGManufacturer
Vishay Siliconix
SIHB33N60EF-GE3
Description
MOSFET N-CH 600V 33A D2PAKInventory
19807 Pcs New Original In Stock
N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Quantity
Minimum 1
Minimum 1
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SIHB33N60EF-GE3 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
98mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3454 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB33
Datasheet & Documents
HTML Datasheet
SIHB33N60EF-GE3-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Standard Package
1,000
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
お手頃価格とエコ包装で、何度もリピートしています。
Dec 02, 2025
Dependability and cost savings—DiGi Electronics nails both.
Dec 02, 2025
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Dec 02, 2025
The after-sales team goes above and beyond to ensure any issues are resolved efficiently.
Dec 02, 2025
I appreciate their quick turnaround and attentive customer support.
Dec 02, 2025
DiGi Electronics' products are of such high quality that they add real value to our work.
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Frequently Asked Questions (FAQ)
What are the key thermal design considerations when using the SIHB33N60EF-GE3 in a high-power motor drive application, and how can I prevent thermal runaway under continuous 33A load?
When designing with the SIHB33N60EF-GE3 in high-current applications like motor drives, effective thermal management is critical due to its 278W power dissipation rating and junction-to-case thermal resistance (RθJC) of 0.45°C/W. To prevent thermal runaway, ensure the D2PAK package is mounted on a properly sized heatsink with low thermal interface resistance—preferably using a phase-change thermal pad or high-conductivity grease. Maintain PCB copper area under the tab (minimum 4 in² of 2 oz copper) and consider forced airflow if ambient temperatures exceed 50°C. Monitor case temperature and derate power linearly above 25°C; exceeding Tj = 150°C risks long-term reliability. Use thermal vias under the tab to improve heat spreading into inner layers.
Can the SIHB33N60EF-GE3 be safely used as a drop-in replacement for the Infineon IPA60R099C7 in a 48V to 400V DC-DC converter, and what circuit modifications might be needed?
While the SIHB33N60EF-GE3 shares similar voltage (600V) and current (33A) ratings with the Infineon IPA60R099C7, it has a higher Rds(on) of 98mΩ vs. 99mΩ—nearly identical—but significantly higher gate charge (155nC vs. ~85nC), which increases switching losses and demands a stronger gate driver. Direct replacement may overload a weak driver or increase turn-on/off times, leading to shoot-through in half-bridge topologies. You’ll likely need to upgrade the gate driver (e.g., to a UCC27531 or similar with >4A peak output) and verify dead-time margins. Also, check layout parasitics: the higher Ciss (3454 pF) increases Miller plateau duration, so minimize gate loop inductance to avoid oscillation.
How does the SIHB33N60EF-GE3 perform under inductive switching stress compared to other 600V N-channel MOSFETs like the STMicroelectronics STF33N60DM2, especially in hard-switching topologies?
The SIHB33N60EF-GE3 exhibits robust performance in hard-switching applications due to its optimized cell design and strong avalanche energy rating (UIS), but it has a relatively high output capacitance (Coss) and gate charge, which increase switching losses under inductive loads compared to the STF33N60DM2. The STF33N60DM2 features lower Qg (~110nC) and faster switching, making it more efficient at high frequencies. However, the SIHB33N60EF-GE3 offers better ruggedness in overload conditions. For snubberless designs, ensure proper gate resistance (typically 10–22Ω) to dampen ringing and avoid exceeding Vgs(max) = ±30V during transients. Always validate with double-pulse testing under worst-case load and temperature.
What reliability risks should I consider when operating the SIHB33N60EF-GE3 near its maximum junction temperature of 150°C in an industrial inverter environment?
Operating the SIHB33N60EF-GE3 near 150°C significantly accelerates wear-out mechanisms such as bond wire fatigue, intermetallic growth at die attach, and threshold voltage drift over time. While the device is rated for -55°C to 150°C, prolonged operation above 125°C reduces mean time between failures (MTBF), especially under thermal cycling. In industrial inverters with frequent start-stop cycles, this can lead to premature failure. Mitigate risk by maintaining Tj below 125°C through improved cooling, reducing RMS current via parallel devices if needed, and avoiding repeated short-circuit events. Also, ensure MSL 1 handling doesn’t compromise long-term moisture resistance—though unlimited floor life simplifies assembly, conformal coating is recommended in humid environments.
Is the SIHB33N60EF-GE3 suitable for use in a 500W offline flyback converter operating at 100 kHz, and how does its switching behavior impact EMI and efficiency?
The SIHB33N60EF-GE3 is generally not ideal for a 500W offline flyback at 100 kHz due to its high gate charge (155nC) and input capacitance (3454 pF), which lead to excessive switching losses and driver power demands at high frequency. While its 600V rating provides margin for line surges, the slow turn-off (due to high Qg) increases turn-off losses and generates higher dv/dt, worsening EMI. For such applications, consider lower-Qg alternatives like the Vishay SiHG33N60E (Qg ~100nC) or CoolMOS™ equivalents. If you must use the SIHB33N60EF-GE3, employ a dedicated high-current gate driver, add an RC snubber across drain-source to suppress ringing, and use frequency dithering or shielding to meet EMI standards—expect ~3–5% lower efficiency compared to optimized parts.
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