SIA430DJT-T1-GE3 Vishay Siliconix
4.9 / 5.0 - (159 Ratings)

SIA430DJT-T1-GE3

Product Overview

12786083

DiGi Electronics Part Number

SIA430DJT-T1-GE3-DG

Manufacturer

Vishay Siliconix
SIA430DJT-T1-GE3

Description

MOSFET N-CH 20V 12A PPAK SC70-6

Inventory

33300 Pcs New Original In Stock
N-Channel 20 V 12A (Tc) 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

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IMPORTANT NOTICE

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 3000 0.1700 510.3500
  • 6000 0.1600 958.5700
  • 9000 0.1500 1349.3600
  • 30000 0.1400 4255.3700
Better Price by Online RFQ.
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SIA430DJT-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging Tape & Reel (TR)

Series -

Product Status Active

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 20 V

Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V

FET Feature -

Power Dissipation (Max) 19.2W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® SC-70-6 Single

Package / Case PowerPAK® SC-70-6

Base Product Number SIA430

Datasheet & Documents

HTML Datasheet

SIA430DJT-T1-GE3-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
742-SIA430DJT-T1-GE3DKR
742-SIA430DJT-T1-GE3CT
742-SIA430DJT-T1-GE3TR
SIA430DJT-T1-GE3-DG
Standard Package
3,000
DIGI Certification
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