AO3413A >
AO3413A
UMW
SOT-23-3 POWER MOSFETS ROHS
36540 Pcs New Original In Stock
P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23
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AO3413A UMW
5.0 / 5.0 - (185 Ratings)

AO3413A

Product Overview

12991404

DiGi Electronics Part Number

AO3413A-DG

Manufacturer

UMW
AO3413A

Description

SOT-23-3 POWER MOSFETS ROHS

Inventory

36540 Pcs New Original In Stock
P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 10 0.0402 0.4020
  • 100 0.0309 3.0900
  • 300 0.0262 7.8600
  • 3000 0.0228 68.4000
  • 6000 0.0200 120.0000
  • 9000 0.0186 167.4000
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AO3413A Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer UMW

Packaging Tape & Reel (TR)

Series UMW

Product Status Active

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 20 V

Current - Continuous Drain (Id) @ 25°C 3A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V

Rds On (Max) @ Id, Vgs 66mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V

Vgs (Max) ±8V

Input Capacitance (Ciss) (Max) @ Vds 745 pF @ 10 V

FET Feature -

Power Dissipation (Max) 1.4W (Ta)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package SOT-23

Package / Case TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

HTML Datasheet

AO3413A-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

Additional Information

Other Names
4518-AO3413ACT
4518-AO3413ATR
4518-AO3413ADKR
Standard Package
3,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
별***가
Dec 02, 2025
5.0
배송이 늘 정시에 도착하며, 고객 지원이 매우 믿음직스럽습니다.
별***서
Dec 02, 2025
5.0
제품 관련 문의에 대해 적극적으로 해결책을 제시해 주셨습니다.
Auro***tLune
Dec 02, 2025
5.0
Une entreprise fiable avec des prix compétitifs et un service après-vente toujours efficace.
Live***agoon
Dec 02, 2025
5.0
I appreciate how reliably DiGi Electronics ships products exactly when promised, minimizing any delays in my work.
Horiz***haser
Dec 02, 2025
5.0
DiGi Electronics makes it easy to access troubleshooting resources anytime I need them.
Joy***ful
Dec 02, 2025
5.0
DiGi Electronics’ commitment to product consistency is truly commendable.
Sta***Way
Dec 02, 2025
5.0
Their after-sales service has always been reliable and courteous.
Aut***Haze
Dec 02, 2025
5.0
DiGi Electronics demonstrates excellent logistical expertise.
Shimm***ngSoul
Dec 02, 2025
5.0
Their commitment to customer satisfaction is truly impressive.
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Frequently Asked Questions (FAQ)

Can the AO3413A P-channel MOSFET safely replace an Infineon BSS84 in a 3.3V logic-level power switching application, and what are the key risks to evaluate during drop-in replacement?

The AO3413A can be a viable replacement for the Infineon BSS84 in 3.3V logic-level applications due to its low Vgs(th) of 1V max and Rds(on) of 66mΩ at 4.5V Vgs—comparable to the BSS84’s 130mΩ at 10V. However, the AO3413A has significantly lower gate charge (11nC vs ~8nC for BSS84), enabling faster switching but potentially increasing susceptibility to voltage spikes from parasitic inductance. Ensure your gate driver can source enough current for fast turn-on/off, and verify thermal performance under actual load, as the AO3413A’s 1.4W power rating in SOT-23 may run hotter than the BSS84 under continuous 3A loads without adequate PCB copper heatsinking.

What PCB layout considerations are critical when using the AO3413A in high-current battery management circuits to avoid thermal runaway or premature failure?

When using the AO3413A in battery management or high-current paths, prioritize a low-impedance thermal pad connection by expanding the drain copper area on the PCB and using multiple vias to inner/ground planes. The SOT-23 package relies entirely on PCB conduction for heat dissipation, and localized heating above 100°C can degrade Rds(on) over time. Keep gate trace length under 10mm and place the gate resistor within 5mm of the device to minimize loop inductance, which can cause shoot-through or oscillation during fast switching. Also, avoid placing sensitive analog traces near the drain due to high dV/dt during transitions.

Is the AO3413A suitable for 5V USB power path control with reverse polarity protection, and how does its body diode behavior compare to alternatives like the Diodes Incorporated DMG2305UX?

Yes, the AO3413A is well-suited for 5V USB power path control with reverse polarity protection due to its low threshold voltage and fast turn-on at 4.5V Vgs. However, its intrinsic body diode has a forward voltage drop of approximately 0.8–1.0V, slightly higher than the DMG2305UX’s ~0.7V, leading to marginally higher conduction losses during reverse-blocking standby. For systems sensitive to quiescent current or thermal buildup in fault conditions, consider adding a Schottky bypass diode in parallel or selecting a MOSFET with an integrated back-to-back configuration. Always validate inrush current handling during hot-plug events, as the AO3413A’s pulsed current rating exceeds continuous limits but may still experience stress without proper soft-start circuitry.

How does the AO3413A perform in high-frequency (>100kHz) DC-DC buck converter applications, and what gate drive challenges should designers anticipate?

The AO3413A can operate in buck converters up to ~200kHz, but its relatively high input capacitance (745pF at 10V Vds) demands a robust gate driver capable of sourcing/sinking >100mA peak current to minimize switching losses. At higher frequencies, the 11nC total gate charge requires careful dead-time control to prevent cross-conduction, especially when paired with an N-channel low-side FET. Additionally, the ±8V Vgs(max) rating limits compatibility with 12V gate drives; use a 5V or lower drive rail or include Zener clamping to avoid oxide breakdown. Evaluate efficiency at light loads—the fixed gate drive losses may outweigh conduction savings compared to larger, lower-Ciss MOSFETs like the Vishay Si2301DS in ultra-low-power designs.

What long-term reliability concerns should be addressed when deploying the AO3413A in industrial environments with temperature cycling from -40°C to 125°C?

While the AO3413A is rated for junction temperatures from -55°C to 150°C, repeated thermal cycling in industrial environments can induce mechanical stress at the solder joints due to CTE mismatch between the SOT-23 package and PCB. To mitigate this, use SAC305 solder with proper reflow profiling and ensure symmetrical copper balancing on the mounting pads. Additionally, monitor Rds(on) drift over time—prolonged operation near 100°C can cause gradual increase in on-resistance due to metal migration, especially under high drain current. For mission-critical applications, derate the continuous current to ≤2A and incorporate periodic health monitoring via sense resistors. The MSL-1 rating simplifies handling, but conformal coating is recommended if humidity exposure exceeds 60% RH to prevent electrochemical migration.

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