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AO3409A
UMW
30V 2.6A 130MR@10V,2.6A 1.4W 3V@
36410 Pcs New Original In Stock
P-Channel 30 V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23
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AO3409A
Product Overview
12991444
DiGi Electronics Part Number
AO3409A-DGManufacturer
UMW
AO3409A
Description
30V 2.6A 130MR@10V,2.6A 1.4W 3V@Inventory
36410 Pcs New Original In Stock
P-Channel 30 V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23
Quantity
Minimum 1
Minimum 1
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AO3409A Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
UMW
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
130mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet & Documents
Datasheets
Download AO3409A Product Specification (PDF)
HTML Datasheet
AO3409A-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
4518-AO3409ACT
4518-AO3409ATR
4518-AO3409ADKR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
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Frequently Asked Questions (FAQ)
Can the AO3409A be safely used as a drop-in replacement for the Infineon BSS84 in a low-side switching application with a 3.3V microcontroller drive?
The AO3409A is not a direct drop-in replacement for the Infineon BSS84 due to critical differences in gate threshold and on-resistance characteristics. While both are P-channel MOSFETs in SOT-23 packages, the AO3409A has a higher Vgs(th) max of 3V (vs. 1.5V for BSS84) and significantly higher Rds(on) of 130mΩ at 10V Vgs—compared to ~8Ω for BSS84 at 4.5V. At 3.3V drive, the AO3409A may not fully enhance, leading to excessive conduction losses or thermal runaway. For reliable 3.3V logic-level operation, consider the Diodes Incorporated ZXMP3A17E6 or Vishay Si2301DS instead.
What are the thermal risks when using the AO3409A in a 2A continuous load without a heatsink on a standard 1-layer PCB?
Operating the AO3409A at 2A continuous current without a heatsink on a 1-layer FR4 PCB poses significant thermal risk. With Rds(on) = 130mΩ at 10V Vgs, power dissipation reaches P = I²R = (2A)² × 0.13Ω = 0.52W. Given its 1.4W max rating at 25°C ambient and typical RθJA of ~200°C/W in SOT-23, junction temperature can exceed 150°C even at modest ambient temperatures (e.g., Tj ≈ 25°C + 0.52W × 200 = 129°C). However, derating above 25°C reduces allowable power. Without copper pour or thermal vias, sustained operation near 2A may cause premature failure—use a 4-layer board with thermal relief or select a DFN-packaged alternative like the AO3401A for better thermal performance.
How does the AO3409A’s gate charge (9nC @ 10V) impact switching speed and driver selection in a 100kHz PWM motor control circuit?
The AO3409A’s total gate charge of 9nC at 10V Vgs requires careful driver design for efficient 100kHz PWM operation. At this frequency, average gate drive current is Qg × f = 9nC × 100kHz = 0.9mA, which is manageable, but rise/fall times depend on driver peak current. A weak driver (e.g., microcontroller GPIO with 25Ω output impedance) may result in slow transitions, increasing switching losses. To minimize overlap losses, use a dedicated gate driver like the TI TPS28225 or a push-pull buffer with >100mA peak capability. Also, keep gate trace inductance low (<10nH) to avoid ringing—especially critical given the AO3409A’s relatively high Ciss (370pF), which can interact with parasitic inductance during fast switching.
Is the AO3409A suitable for 24V industrial bus protection circuits where inductive kickback from relay coils is expected?
The AO3409A is marginal for 24V industrial bus protection due to its 30V Vdss rating leaving minimal headroom. In relay or inductive load scenarios, voltage spikes can exceed 40V during turn-off, risking avalanche breakdown—even though the part supports some unclamped inductive switching (UIS), it lacks specified UIS ratings, making it unreliable for repetitive transients. For robust protection, use a higher-voltage MOSFET like the Vishay SI2305CDS (60V) or add a TVS diode (e.g., SMAJ33A) across drain-source. Alternatively, consider the AO3407A (60V variant from same family) if footprint compatibility allows, providing safer margin for 24V systems with inductive loads.
Can the AO3409A be paralleled to increase current handling in a power path management design, and what layout precautions are necessary?
Paralleling AO3409A devices to increase current capacity is possible but requires strict layout and biasing controls to avoid current imbalance. Due to its positive temperature coefficient of Rds(on), thermal runaway is less likely than with bipolar devices, but mismatches in threshold voltage (±0.5V typical variation) can cause uneven current sharing at startup. Use individual gate resistors (10–47Ω) per device to dampen oscillations and ensure symmetrical PCB layout with matched trace lengths from source to load. Avoid sharing a single gate drive trace. For currents above 3A, consider a single higher-current solution like the Alpha & Omega AO4407A (40V, 7A in SO-8) to eliminate paralleling complexity and improve reliability.
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AO3409A CAD Models
UMW AO3409A PCB symbols & footprints
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