AO3403A >
AO3403A
UMW
SOT-23-3 POWER MOSFETS ROHS
33819 Pcs New Original In Stock
P-Channel 30 V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23
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AO3403A UMW
5.0 / 5.0 - (225 Ratings)

AO3403A

Product Overview

12991433

DiGi Electronics Part Number

AO3403A-DG

Manufacturer

UMW
AO3403A

Description

SOT-23-3 POWER MOSFETS ROHS

Inventory

33819 Pcs New Original In Stock
P-Channel 30 V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 10 0.0364 0.3640
  • 100 0.0290 2.9000
  • 300 0.0253 7.5900
  • 3000 0.0212 63.6000
  • 6000 0.0189 113.4000
  • 9000 0.0179 161.1000
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AO3403A Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer UMW

Packaging Tape & Reel (TR)

Series UMW

Product Status Active

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 75mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V

Vgs (Max) ±12V

Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 15 V

FET Feature -

Power Dissipation (Max) 1.4W (Ta)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package SOT-23

Package / Case TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

HTML Datasheet

AO3403A-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Additional Information

Other Names
4518-AO3403ADKR
4518-AO3403ATR
4518-AO3403ACT
Standard Package
3,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
행***트
Dec 02, 2025
5.0
물류 추적 시스템이 매우 믿을 만하고 실시간 업데이트를 제공해서 주문 상태를 쉽게 알 수 있습니다.
Étoile***llante
Dec 02, 2025
5.0
La livraison a toujours été ultra rapide, pratique et fiable.
Bli***loom
Dec 02, 2025
5.0
Their online chat service is prompt and provides helpful assistance instantly.
Silv***ining
Dec 02, 2025
5.0
Their logistics tracking system significantly simplifies inventory management.
Infin***Smile
Dec 02, 2025
5.0
Their dedicated staff ensures a smooth and pleasant purchasing experience.
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Frequently Asked Questions (FAQ)

Can the AO3403A P-channel MOSFET be safely used as a drop-in replacement for the Infineon BSS84 in a 3.3V logic-level power switching application, and what are the key performance trade-offs?

The AO3403A can replace the BSS84 in many 3.3V logic-level applications due to its low Vgs(th) of 1.4V max and Rds(on) of 75mΩ at 10V, but caution is required at 3.3V gate drive. While the BSS84 is optimized for sub-3V operation with lower gate charge, the AO3403A’s Rds(on) increases significantly at Vgs = 3.3V (not fully specified in datasheet), potentially leading to higher conduction losses and thermal stress. Always validate switching efficiency and junction temperature under actual load conditions. For high-cycle or high-current scenarios, consider adding a gate driver or verifying derating margins—especially since the AO3403A’s 1.4W power dissipation is borderline in compact layouts without thermal relief.

What are the critical layout considerations when designing a PCB with the AO3403A in a high-frequency switching application above 500 kHz, and how does its input capacitance impact gate drive stability?

At switching frequencies above 500 kHz, the AO3403A’s 315 pF input capacitance (Ciss) can cause significant gate ringing and shoot-through if not properly managed. Minimize gate loop inductance by placing the gate driver IC or microcontroller within 5 mm of the MOSFET, use a low-impedance ground plane, and include a 10–100 Ω series gate resistor to dampen oscillations. Avoid long traces between source and ground—even a few nH of inductance can induce voltage spikes during turn-off. Also, ensure the driver can source/sink enough current (Qg = 7.2 nC) to charge/discharge Ciss quickly; a weak driver will increase switching losses and risk thermal runaway. Thermal vias under the SOT-23 package are strongly recommended to maintain TJ within limits.

Is the AO3403A suitable for reverse battery protection in a 12V automotive accessory circuit, and how does its body diode behavior compare to dedicated protection MOSFETs like the Vishay SiA433EDJ?

The AO3403A can be used for reverse battery protection in 12V systems, but it lacks the optimized body diode and avalanche ruggedness of purpose-built devices like the SiA433EDJ. When reverse polarity occurs, the intrinsic body diode becomes forward-biased, potentially allowing damaging current flow unless blocked by series diodes or additional circuitry. Unlike the SiA433EDJ—which integrates enhanced ESD and transient protection—the AO3403A offers no guaranteed avalanche energy rating. For robust automotive use, add a parallel Schottky diode or TVS for transient suppression and ensure the system can tolerate the ~0.7V forward drop of the body diode during normal operation. This increases conduction loss compared to ideal solutions, so evaluate total system efficiency and fault tolerance carefully.

How does the AO3403A’s thermal performance degrade in high-ambient-temperature environments (e.g., >85°C), and what derating strategy should be applied to avoid premature failure?

Although the AO3403A is rated for TJ up to 150°C, its real-world reliability drops sharply in high-ambient environments due to limited heat dissipation in SOT-23 packaging. At 85°C ambient, the effective power handling may fall below 0.5W without extensive copper pours or thermal vias. Derate continuous drain current by at least 30% above 70°C ambient, and never exceed 1.8A in sustained operation above 85°C—even if within the 2.6A @ 25°C spec. Use a 4-layer board with internal ground planes and multiple thermal vias (≥6) connecting the source pad to a bottom-layer copper area. Monitor case temperature empirically; if it exceeds 100°C, consider migrating to a DFN or SO-8 package with better thermal resistance (θJA). Ignoring thermal derating risks thermal runaway, especially under pulsed loads with high duty cycles.

Can the AO3403A handle inductive load switching (e.g., relay or motor) without an external flyback diode, and what failure modes should I anticipate if I omit one?

The AO3403A should never switch inductive loads without an external flyback diode or snubber circuit. While it has a body diode, it is not designed to handle repetitive inductive kickback energy. Without protection, the voltage spike from L·di/dt during turn-off can exceed the 30V Vdss rating, causing immediate avalanche breakdown or latent gate oxide damage. Even brief overvoltage events may degrade Rds(on) over time, leading to premature failure. Always include a Schottky diode (e.g., BAT54S) in parallel with the load for fast clamping, or use an RC snubber tuned to the load inductance. For motors or relays drawing near 2A, also consider adding a TVS diode rated for 36V to absorb residual transients. Omitting these protections voids reliability assumptions and significantly increases field failure risk.

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