BQ4010YMA-150 >
BQ4010YMA-150
Texas Instruments
IC NVSRAM 64KBIT PARALLEL 28DIP
1458 Pcs New Original In Stock
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)
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BQ4010YMA-150 Texas Instruments
5.0 / 5.0 - (221 Ratings)

BQ4010YMA-150

Product Overview

1262915

DiGi Electronics Part Number

BQ4010YMA-150-DG

Manufacturer

Texas Instruments
BQ4010YMA-150

Description

IC NVSRAM 64KBIT PARALLEL 28DIP

Inventory

1458 Pcs New Original In Stock
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)
Memory
CAD Models - PCB Symbols & Footprints
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Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 53.0805 53.0805
  • 196 21.1799 4151.2604
  • 504 20.4728 10318.2912
  • 994 20.1227 20001.9638
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BQ4010YMA-150 Technical Specifications

Category Memory, Memory

Manufacturer Texas Instruments

Packaging -

Series -

Product Status Obsolete

DiGi-Electronics Programmable Not Verified

Memory Type Non-Volatile

Memory Format NVSRAM

Technology NVSRAM (Non-Volatile SRAM)

Memory Size 64Kbit

Memory Organization 8K x 8

Memory Interface Parallel

Write Cycle Time - Word, Page 150ns

Access Time 150 ns

Voltage - Supply 4.5V ~ 5.5V

Operating Temperature 0°C ~ 70°C (TA)

Mounting Type Through Hole

Package / Case 28-DIP Module (0.61", 15.49mm)

Supplier Device Package 28-DIP Module (18.42x37.72)

Base Product Number BQ4010

Datasheet & Documents

HTML Datasheet

BQ4010YMA-150-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0041

Additional Information

Other Names
BQ4010YMA150
296-32842-5
BQ4010YMA-150-DG
Standard Package
14

Alternative Parts

View Details
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
DS1225AD-150+
Analog Devices Inc./Maxim Integrated
1453
DS1225AD-150+-DG
17.0975
MFR Recommended
DS1225AD-70IND+
Analog Devices Inc./Maxim Integrated
3754
DS1225AD-70IND+-DG
17.9620
MFR Recommended
DS1225AB-70IND+
Analog Devices Inc./Maxim Integrated
2371
DS1225AB-70IND+-DG
6.0015
MFR Recommended
DS1225AB-150+
Analog Devices Inc./Maxim Integrated
2256
DS1225AB-150+-DG
0.0889
MFR Recommended
DS1225AB-200+
Analog Devices Inc./Maxim Integrated
869
DS1225AB-200+-DG
6.0363
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
ひか***まご
Dec 02, 2025
5.0
DiGi Electronicsは多彩な商品ラインナップで、購入の際に迷うことがありません。
Wolk***tern
Dec 02, 2025
5.0
Die Logistikprozesse bei DiGi Electronics sind effizient, was zu schnellen und sicheren Lieferungen führt.
Pix***ulse
Dec 02, 2025
5.0
My experience with their customer service was fantastic—professional and friendly.
Gentl***urney
Dec 02, 2025
5.0
The quality of support from DiGi shows their genuine concern for customer happiness.
Brigh***yline
Dec 02, 2025
5.0
Affordable and environmentally friendly—DiGi is making a difference one package at a time.
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Frequently Asked Questions (FAQ)

Can I use the BQ4010YMA-150 in a new design despite its obsolete status, and what are the long-term supply and reliability risks?

While the BQ4010YMA-150 is technically functional and RoHS3 compliant, its 'Obsolete' status from Texas Instruments means it is no longer recommended for new designs. Using it introduces significant long-term risks, including unpredictable end-of-life (EOL) stock depletion, lack of future firmware or process support, and potential counterfeit parts in the secondary market. For new designs, consider migrating to a supported alternative like the DS1225AD-150+ or DS1225AB-150+, which offer pin-compatible footprints and similar 64Kb NVSRAM functionality with active manufacturer backing and better supply chain visibility.

What design considerations should I account for when replacing the BQ4010YMA-150 with a DS1225AB-150+ in an existing 5V industrial control system?

The DS1225AB-150+ is a viable drop-in replacement for the BQ4010YMA-150 in most 5V systems due to matching 8K x 8 organization, 150 ns access time, and 28-DIP packaging. However, verify that your system’s backup power scheme (typically a supercapacitor or lithium cell) aligns with the DS1225AB-150+'s automatic data transfer thresholds—its switchover voltage is factory-trimmed and may differ slightly from the BQ4010YMA-150. Also confirm timing margins under worst-case temperature (0°C), as propagation delays can vary between manufacturers despite identical nominal specs.

How does the BQ4010YMA-150 handle power-fail detection and data retention during brownout conditions, and what circuit safeguards are recommended?

The BQ4010YMA-150 integrates internal power-fail circuitry that automatically switches from VCC to backup power (e.g., a 3V lithium cell) when supply voltage drops below ~4.5V, preserving SRAM contents. However, it lacks user-accessible power-fail interrupt or reset signaling. To mitigate data corruption during brownouts, add an external supervisor IC (e.g., TPS3823) to assert a system-wide reset before VCC falls below the NVSRAM’s valid operating range. Ensure your backup source can sustain >10 µA for the required retention period, and avoid frequent write cycles during low-voltage events to prevent incomplete transfers.

Is the BQ4010YMA-150 suitable for automotive or extended-temperature applications, and what derating or validation steps are necessary?

No—the BQ4010YMA-150 is rated only for 0°C to 70°C ambient and lacks AEC-Q100 qualification, making it inappropriate for automotive or industrial environments exceeding this range. Even within its rated band, sustained operation near 70°C reduces lithium backup cell life and increases SRAM leakage, potentially compromising data retention. If your application requires -40°C to 85°C operation, use the DS1225AD-70IND+ (industrial grade) instead. For any mission-critical deployment, conduct accelerated life testing with your specific backup power configuration to validate retention under thermal stress.

What PCB layout and decoupling practices are critical when integrating the BQ4010YMA-150 in a high-noise digital environment to ensure reliable non-volatile operation?

To maintain data integrity in noisy environments, place a 0.1 µF ceramic decoupling capacitor within 5 mm of the BQ4010YMA-150’s VCC pin and use a low-ESR bulk capacitor (10–100 µF) near the power entry point. Route address/data lines away from high-speed clocks or switching regulators to minimize coupling-induced glitches during backup mode transitions. Since the device lacks ECC, ensure ground planes are solid under the DIP footprint and avoid vias in critical signal paths. If using a supercapacitor for backup, isolate its charging circuit with a Schottky diode to prevent reverse current during main power loss, which could destabilize the NVSRAM’s internal charge pump.

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