BQ24740RHDR >
BQ24740RHDR
Texas Instruments
IC BAT CHG MULTCHEM 2-4CL 28VQFN
24319 Pcs New Original In Stock
Charger IC Multi-Chemistry 28-VQFN (5x5)
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BQ24740RHDR Texas Instruments
5.0 / 5.0 - (90 Ratings)

BQ24740RHDR

Product Overview

13036590

DiGi Electronics Part Number

BQ24740RHDR-DG

Manufacturer

Texas Instruments
BQ24740RHDR

Description

IC BAT CHG MULTCHEM 2-4CL 28VQFN

Inventory

24319 Pcs New Original In Stock
Charger IC Multi-Chemistry 28-VQFN (5x5)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 3.2660 3.2660
  • 10 3.0362 30.3620
  • 25 2.9587 73.9686
  • 100 2.8721 287.2076
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BQ24740RHDR Technical Specifications

Category Power Management (PMIC), Battery Chargers

Manufacturer Texas Instruments

Packaging Cut Tape (CT)

Manufacturer Texas Instruments

Series -

Packaging Tape & Reel (TR)

Part Status Obsolete

Battery Chemistry Multi-Chemistry

Number of Cells 2 ~ 4

Current - Charging Constant - Programmable

Programmable Features -

Fault Protection Over Voltage

Charge Current - Max 10A

Battery Pack Voltage 18V (Max)

Voltage - Supply (Max) 24V

Interface -

Operating Temperature -40°C ~ 125°C (TJ)

Mounting Type Surface Mount

Package / Case 28-VFQFN Exposed Pad

Supplier Device Package 28-VQFN (5x5)

Base Product Number BQ24740

Datasheet & Documents

HTML Datasheet

BQ24740RHDR-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 2 (1 Year)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0060

Additional Information

Other Names
296-21374-1
-296-21374-1-ND
-BQ24740RHDRG4
2156-BQ24740RHDR
-296-21374-1
296-21374-6
-BQ24740RHDR-NDR
296-21374-2
-BQ24740RHDRG4-NDR
TEXTISBQ24740RHDR
Standard Package
3,000

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
BQ24740RHDT
Texas Instruments
873
BQ24740RHDT-DG
2.8721
Parametric Equivalent
BQ24740RHDRG4
Texas Instruments
4375
BQ24740RHDRG4-DG
2.8721
Parametric Equivalent

Reviews

5.0/5.0-(Show up to 5 Ratings)
Golde***nshine
Dec 02, 2025
5.0
The market offers many options, but DiGi Electronics stands out for value and quality.
Lumino***ourney
Dec 02, 2025
5.0
I am highly satisfied with their after-sales service that caters to remote professionals.
Silen***mphony
Dec 02, 2025
5.0
Durable, reliable, and delivered swiftly—highly satisfied.
Moo***ght
Dec 02, 2025
5.0
All logistics communication was clear and concise, making it easy to understand the delivery timeline.
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Frequently Asked Questions (FAQ)

Can the BQ24740RHDR be used as a drop-in replacement for the BQ24725A in a 4-cell Li-ion battery charger design, and what are the key design-in risks?

The BQ24740RHDR is not a direct drop-in replacement for the BQ24725A despite similar multi-chemistry support and 4-cell capability. Key differences include the absence of I2C/SMBus interface in the BQ24740RHDR, requiring redesign of system communication and control logic. Additionally, the BQ24740RHDR lacks dynamic power management (DPM), increasing risk of input overloading if not externally managed. Ensure revised thermal layout due to 28-VQFN (5x5) exposed pad requirements, and verify OTG (On-The-Go) functionality is not needed, as it’s unsupported. Always validate gate drive timing for external FETs as differences in driver strength may affect charge efficiency.

What are the critical thermal design considerations when operating the BQ24740RHDR at its maximum 10A charge current in a compact 5x5mm QFN package?

Operating the BQ24740RHDR at 10A requires aggressive thermal management due to high power dissipation in the 5x5mm VQFN package. Use a minimum 4-layer PCB with ample vias under the exposed thermal pad to transfer heat to internal ground planes. Ensure at least 2 in² of copper area connected to GND for effective conduction cooling. Simulate thermal performance under worst-case ambient (125°C junction limit) and consider forced airflow if enclosure limits convection. Derate charge current by 20–30% in enclosed or high-ambient environments to avoid thermal shutdown or long-term reliability degradation.

How does the BQ24740RHDR handle over-voltage protection in a 19V input system powering a 4S Li-ion stack, and what fault response timing should be expected?

The BQ24740RHDR includes integrated over-voltage protection (OVP) on the input supply, triggering at approximately 26V (above the 24V max rating), safeguarding the IC and battery in 19V systems during transients. However, it does not offer cell-level over-voltage protection; that responsibility lies with the external FET control and voltage sensing network. The OVP response time is typically under 2µs, but system-level protection must still include fast transient suppressors (like TVS diodes) on the input rail. Be cautious: prolonged exposure to over-voltage near 24V may degrade reliability despite protection circuitry.

What are the implications of BQ24740RHDR being marked as obsolete for new designs, and are there viable long-term alternatives with pin-compatible options?

The BQ24740RHDR’s obsolete status means no future production, posing supply chain and lifecycle risks for new designs requiring long-term availability. For drop-in replacements, consider the BQ25713 or BQ25756, which offer similar 2-4 cell support and 10A capability but require interface changes due to I2C integration. Neither is pin-compatible, so PCB redesign is necessary. Evaluate BQ24703 for simplified designs with lower current needs. For minimal change, last-time buys with extended storage (below MSL 2 limits) can support short-term production, but a redesign with active TI parts is strongly recommended for scalability and technical support.

When configuring the BQ24740RHDR in a high-temperature industrial environment (up to 105°C ambient), what derating and reliability trade-offs should be considered?

In ambient temperatures up to 105°C, the BQ24740RHDR must be derated to maintain junction temperature below 125°C. Limit continuous charge current to ≤7A depending on PCB thermal design, and reduce switching frequency if using a custom inductor to lower switching losses. Use high-temperature-rated external components (especially FETs and sense resistors) to match reliability expectations. Monitor long-term parametric drift—thresholds like OVP or charge termination may shift near thermal limits. Add thermal hysteresis in control firmware to prevent oscillation during thermal throttling, ensuring stable operation over the product lifecycle.

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