CM600HU-12F >
CM600HU-12F
Powerex Inc.
IGBT MOD 600V 600A 1420W
5392 Pcs New Original In Stock
IGBT Module Trench Single 600 V 600 A 1420 W Chassis Mount Module
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5.0 / 5.0 - (487 Ratings)

CM600HU-12F

Product Overview

12840338

DiGi Electronics Part Number

CM600HU-12F-DG

Manufacturer

Powerex Inc.
CM600HU-12F

Description

IGBT MOD 600V 600A 1420W

Inventory

5392 Pcs New Original In Stock
IGBT Module Trench Single 600 V 600 A 1420 W Chassis Mount Module
Quantity
Minimum 1

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In Stock (All prices are in USD)
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  • 1 51.5118 51.5118
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CM600HU-12F Technical Specifications

Category Transistors, IGBTs, IGBT Modules

Manufacturer Powerex

Packaging -

Series IGBTMOD™

Product Status Discontinued at Digi-Key

IGBT Type Trench

Configuration Single

Voltage - Collector Emitter Breakdown (Max) 600 V

Current - Collector (Ic) (Max) 600 A

Power - Max 1420 W

Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 600A

Current - Collector Cutoff (Max) 1 mA

Input Capacitance (Cies) @ Vce 160 nF @ 10 V

Input Standard

NTC Thermistor No

Operating Temperature -40°C ~ 150°C (TJ)

Mounting Type Chassis Mount

Package / Case Module

Supplier Device Package Module

Datasheet & Documents

HTML Datasheet

CM600HU-12F-DG

Environmental & Export Classification

RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
835-1098
CM600HU12F
CM600HU-12F-DG
Standard Package
1

Reviews

5.0/5.0-(Show up to 5 Ratings)
幸***者
Dec 02, 2025
5.0
客服非常有耐心,回答問題詳細且快速。
夢***者
Dec 02, 2025
5.0
Every interaction with DiGi Electronics demonstrates their dedication to professionalism and excellent customer service.
す***おと
Dec 02, 2025
5.0
安さだけでなく、スタッフの親切さも最高でした。気持ちよく買い物ができました。
Sou***ine
Dec 02, 2025
5.0
Always impressed by the courteous and efficient service from their team.
Lu***ist
Dec 02, 2025
5.0
Their support staff is knowledgeable and efficient, making troubleshooting a breeze.
Peacef***rairie
Dec 02, 2025
5.0
The affordable options from DiGi Electronics allow remote teams to scale up efficiently.
Tranqu***tyTrail
Dec 02, 2025
5.0
The professionalism of their customer service team is second to none, making shopping effortless.
Fre***ibe
Dec 02, 2025
5.0
After-sales support has been consistently helpful, guiding us through technical setups with patience.
Shin***Soul
Dec 02, 2025
5.0
Their customer service team is always welcoming and ready to help with a smile.
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Frequently Asked Questions (FAQ)

What are the key design risks when replacing a CM600HU-12F with a modern IGBT module in a high-power motor drive application, and how can I ensure compatibility without compromising thermal performance?

When replacing the discontinued CM600HU-12F, engineers often face mismatches in gate drive requirements, switching behavior, and thermal interface compatibility. For example, newer modules like the Infineon FZ600R65KE3 or Mitsubishi CM600DY-12H may offer similar ratings but differ in internal layout, stray inductance, and Vce(on) characteristics. A direct drop-in replacement risks increased switching losses or gate oscillation due to differing Cies and internal gate resistance. To mitigate this, perform a double-pulse test to validate switching performance under load, ensure the gate driver can source/sink sufficient current for the new module’s input capacitance, and verify that the thermal pad and mounting hole pattern align with your heatsink. Always re-evaluate the thermal interface material and clamping force, as even minor air gaps can significantly raise junction temperatures in 600A applications.

How does the absence of an integrated NTC thermistor in the CM600HU-12F impact thermal management strategy in a mission-critical inverter design, and what external sensing alternatives are recommended?

The CM600HU-12F lacks an integrated NTC, forcing designers to implement external temperature monitoring—a critical gap in reliability-sensitive systems like industrial drives or UPS inverters. Without direct junction temperature feedback, you must rely on heatsink-mounted thermistors or infrared sensors, which introduce latency and measurement error due to thermal resistance between the die and sensor. This delay can lead to delayed fault response during overloads. To compensate, place a high-accuracy NTC (e.g., Muraco NTH4G39A103F02) as close as possible to the module baseplate using thermal epoxy, and calibrate the thermal model using empirical data from a prototype under full load. Consider adding redundant sensors and implementing predictive thermal algorithms based on Ic and switching frequency to anticipate overheating before it occurs.

Can the CM600HU-12F be safely paralleled with another unit for higher current applications, and what layout and gate drive precautions are necessary to avoid dynamic current imbalance?

Paralleling CM600HU-12F modules is technically feasible but introduces significant risk due to mismatched Vce(on) and gate threshold voltages, which can cause static and dynamic current sharing issues—especially during turn-on and turn-off transitions. Even minor differences in gate loop inductance or driver propagation delay can lead to one module carrying disproportionate current, risking thermal runaway. To minimize imbalance, use a common gate driver with individual gate resistors for each CM600HU-12F, ensure symmetrical DC-link and AC-phase busbar layouts with tight coupling, and match modules from the same production batch if possible. Additionally, incorporate current-sharing reactors or use active gate control techniques. Always validate current distribution with high-bandwidth current probes under pulsed load conditions before deployment.

What are the long-term reliability concerns when operating the CM600HU-12F near its maximum junction temperature of 150°C in a poorly ventilated enclosure, and how can derating improve field lifespan?

Operating the CM600HU-12F consistently near 150°C drastically accelerates bond wire fatigue, solder layer creep, and gate oxide degradation, leading to premature failure—even if within datasheet limits. In enclosed systems with limited airflow, hotspots can exceed rated TJ despite average temperature readings. To enhance reliability, apply aggressive derating: limit continuous operation to ≤125°C TJ and reduce maximum Ic by 20–30% under high ambient conditions. Implement real-time thermal monitoring with fast-response sensors and integrate derating algorithms that throttle output current as temperature rises. Also, ensure the baseplate is flat-mounted with uniform pressure using a thermally conductive but compliant interface material (e.g., graphite pad or phase-change material) to minimize mechanical stress from thermal cycling.

How does the CM600HU-12F’s trench IGBT structure compare to field-stop or non-punch-through designs from competitors like Fuji Electric or Semikron in terms of switching losses and ruggedness under short-circuit conditions?

The CM600HU-12F’s trench IGBT technology offers lower Vce(on) and better conduction efficiency compared to older planar designs, but it may exhibit higher sensitivity to dv/dt-induced turn-on and reduced short-circuit withstand time (typically 5–10 µs) versus robust field-stop devices like the Fuji 6MBI600VH-120 or Semikron SKM600GM12T4. While the trench structure improves switching speed, it can increase susceptibility to dynamic avalanche during hard-switching faults. In applications with inductive loads or risk of shoot-through, this demands faster desaturation detection circuits and tighter gate control. For high-reliability systems, consider whether the efficiency gain justifies the reduced fault tolerance—especially if your protection circuitry cannot respond within the CM600HU-12F’s short-circuit capability window. Always validate fault response in hardware-in-the-loop testing before finalizing the design.

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