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US1J_R1_00001
Panjit International Inc.
DIODE GEN PURP 600V 1A SMA
465765 Pcs New Original In Stock
Diode 600 V 1A Surface Mount SMA (DO-214AC)
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Minimum 1
5.0 / 5.0
- (252 Ratings)
US1J_R1_00001
Product Overview
12965440
DiGi Electronics Part Number
US1J_R1_00001-DGManufacturer
Panjit International Inc.
US1J_R1_00001
Description
DIODE GEN PURP 600V 1A SMAInventory
465765 Pcs New Original In Stock
Diode 600 V 1A Surface Mount SMA (DO-214AC)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
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365 - Day Quality Guarantee - Every part fully backed.
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US1J_R1_00001 Technical Specifications
Category
Diodes, Rectifiers, Single Diodes
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 1 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
100 ns
Current - Reverse Leakage @ Vr
1 µA @ 600 V
Capacitance @ Vr, F
17pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Supplier Device Package
SMA (DO-214AC)
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
US1J
Datasheet & Documents
HTML Datasheet
US1J_R1_00001-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Additional Information
Other Names
3757-US1J_R1_00001TR
3757-US1J_R1_00001DKR
Standard Package
1,800
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
US1JHE3_A/I
Vishay General Semiconductor - Diodes Division
7406
US1JHE3_A/I-DG
0.0178
Parametric Equivalent
US1J-E3/5AT
Vishay General Semiconductor - Diodes Division
2813
US1J-E3/5AT-DG
0.0178
Parametric Equivalent
US1JHE3/61T
Vishay General Semiconductor - Diodes Division
993
US1JHE3/61T-DG
0.0178
Parametric Equivalent
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
친절하고 빠른 고객 지원 덕분에 만족스럽습니다.
Dec 02, 2025
J'apprécie particulièrement la constance de leur livraison, qui est toujours fiable, et leur équipe d'après-vente très réactive.
Dec 02, 2025
高品質な商品を提供しており、非常に信頼しています。
Dec 02, 2025
Their well-stocked inventory helps me to plan and execute efficiently.
Dec 02, 2025
Impressive tracking updates kept me informed without the need to chase down information myself.
Dec 02, 2025
The combination of low prices and quick shipping sets DiGi Electronics apart from others.
Dec 02, 2025
Shipping was faster than I expected, and their team was very helpful afterward.
Dec 02, 2025
Impressed with the durability and reliability of their products. Definitely a trusted brand.
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Frequently Asked Questions (FAQ)
What are the key reliability risks when using the US1J_R1_00001 diode in high-temperature industrial environments, and how can I mitigate them despite its -55°C to 150°C junction rating?
While the US1J_R1_00001 is rated for a junction temperature up to 150°C, sustained operation near this limit—especially in poorly ventilated enclosures or under continuous load—can accelerate thermal fatigue at the solder joints and degrade long-term reliability. The SMA package has limited thermal mass, so PCB copper area and via stitching become critical. To mitigate risk, ensure adequate thermal relief pads, use 2 oz copper layers, and maintain ambient temperatures below 100°C. Additionally, derate the forward current to 0.7A or less in high-temp applications to reduce self-heating and extend lifespan.
Can I safely replace a Vishay 1N4937 or ON Semiconductor MURS160T3G with the US1J_R1_00001 in a 400V AC input rectifier circuit, and what trade-offs should I expect?
Yes, the US1J_R1_00001 can replace both the 1N4937 (600V, 1A, 75ns trr) and MURS160T3G (600V, 1A, 35ns trr) in most 400V AC rectification applications due to its compatible 600V reverse voltage, 1A average current, and 100ns reverse recovery time. However, the US1J_R1_00001 has a slightly slower trr than the MURS160T3G, which may increase switching losses in high-frequency (>50kHz) flyback or PFC circuits. For standard 50/60Hz bridge rectifiers or low-frequency DC-DC converters, the difference is negligible. Verify snubber design if replacing in hard-switching topologies to avoid voltage spikes.
How does the forward voltage drop of the US1J_R1_00001 (1.7V @ 1A) impact thermal design in a compact SMA-packaged power supply, and is it suitable for low-efficiency-sensitive applications?
The 1.7V forward drop at 1A results in 1.7W of power dissipation—significant for a small SMA package with limited heatsinking. In compact, sealed power supplies, this can cause localized hot spots exceeding 125°C junction temperature even at moderate ambient temps. For efficiency-sensitive designs (e.g., battery-powered or high-density AC-DC adapters), consider lower-Vf alternatives like the STMicroelectronics STTH1R06 (1.3V @ 1A) or Diodes Inc. B160-13-F (1.1V @ 1A). If using the US1J_R1_00001, implement thermal vias under the cathode pad and avoid placing heat-sensitive components nearby.
Is the US1J_R1_00001 appropriate for use in automotive 12V systems with load dump transients, given its 600V rating and MSL1 classification?
The US1J_R1_00001’s 600V reverse voltage provides sufficient headroom for 12V automotive systems, where load dump transients can reach 40–60V (per ISO 7637-2), well below its rating. However, the SMA package lacks the mechanical robustness of larger packages like SMC or TO-277, making it less ideal for under-hood vibration environments. While MSL1 ensures no moisture-related assembly risks, long-term reliability in harsh automotive conditions depends on conformal coating and strain relief. For critical applications, consider automotive-grade alternatives such as the Nexperia PMEG6010CEH (AEC-Q101 qualified), but the US1J_R1_00001 is acceptable in cabin-level electronics with proper layout and environmental protection.
What layout and grounding considerations are critical when integrating the US1J_R1_00001 into a high-noise switching power supply to prevent EMI issues related to its 100ns reverse recovery time?
The 100ns reverse recovery time of the US1J_R1_00001 generates high di/dt during turn-off, which can couple noise into adjacent traces or ground planes if not properly managed. Minimize loop area between the diode, input capacitor, and switching node by placing the US1J_R1_00001 as close as possible to the bulk capacitor. Use a solid ground plane beneath but avoid splitting it under the diode. Add a small RC snubber (e.g., 100Ω + 100pF) across the diode if ringing exceeds 20% of Vrrm. Also, route sensitive analog signals away from the diode’s cathode path to reduce conducted EMI, especially in SMPS designs operating above 100kHz.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
US1J_R1_00001 CAD Models
Panjit International Inc. US1J_R1_00001 PCB symbols & footprints
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