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MMDT3904_R1_00001
Panjit International Inc.
SOT-363, TRANSISTOR
20231 Pcs New Original In Stock
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 225mW Surface Mount SOT-363
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5.0 / 5.0
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MMDT3904_R1_00001
Product Overview
12965226
DiGi Electronics Part Number
MMDT3904_R1_00001-DGManufacturer
Panjit International Inc.
MMDT3904_R1_00001
Description
SOT-363, TRANSISTORInventory
20231 Pcs New Original In Stock
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 200mA 225mW Surface Mount SOT-363
Quantity
Minimum 1
Minimum 1
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MMDT3904_R1_00001 Technical Specifications
Category
Transistors, Bipolar (BJT), Bipolar Transistor Arrays
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
200mA
Voltage - Collector Emitter Breakdown (Max)
40V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
225mW
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Base Product Number
MMDT3904
Datasheet & Documents
HTML Datasheet
MMDT3904_R1_00001-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
3757-MMDT3904_R1_00001DKR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Eco-friendly packaging combined with rapid delivery made this shopping experience excellent.
Dec 02, 2025
I feel confident buying from this brand because of their strong emphasis on quality.
Dec 02, 2025
DiGi Electronics offers unbeatable prices that make shopping truly enjoyable and stress-free.
Dec 02, 2025
The robustness of their packaging reassures me that my orders are well protected.
Dec 02, 2025
The value I get from shopping here is unmatched compared to other sites.
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Frequently Asked Questions (FAQ)
Can the MMDT3904_R1_00001 be used to replace a dual NPN array in a low-side driver circuit originally designed with the Diodes Inc. DMMT3904W, and what layout or biasing considerations should I account for during the swap?
Yes, the MMDT3904_R1_00001 is a direct functional replacement for the DMMT3904W in most low-side switching applications due to nearly identical electrical characteristics and SOT-363 packaging. However, verify that your base resistor values are appropriate—since hFE can vary between manufacturers at low currents, test switching performance under worst-case load conditions. Ensure symmetrical PCB trace lengths to both transistors to maintain matched switching timing, especially in current-sharing or complementary drive configurations. The MMDT3904_R1_00001’s MSL-1 rating also simplifies handling compared to higher-sensitivity alternatives.
What are the thermal risks when using the MMDT3904_R1_00001 in a compact PCB layout where both NPN transistors are switching 150mA simultaneously near their 225mW total power limit?
Operating both transistors in the MMDT3904_R1_00001 at 150mA simultaneously approaches the 225mW package limit, especially if Vce(sat) rises under temperature or process variation. In dense layouts with minimal copper pour, thermal coupling between the two devices can cause localized heating, reducing effective hFE and increasing leakage. To mitigate risk, provide adequate thermal relief pads connected to ground planes, avoid enclosing the device in tightly packed component clusters, and derate total power dissipation by 20–30% for ambient temperatures above 70°C. Monitor junction temperature using TJ(max) = 150°C as an absolute limit.
Is the MMDT3904_R1_00001 suitable for driving inductive loads like relays or small solenoids without additional protection circuitry, and how does its Vce breakdown compare to alternatives like the ON Semiconductor NST3904DW1T1G?
The MMDT3904_R1_00001 can drive small inductive loads up to 200mA, but its 40V Vce breakdown leaves minimal margin when switching unclamped inductive transients—typical relay flyback spikes can exceed 50V. Unlike the NST3904DW1T1G (which has similar specs but better documented transient robustness), the MMDT3904_R1_00001 lacks integrated clamp diodes. Always include a flyback diode (e.g., 1N4148 or BAT54S) across the load. For repetitive switching, consider adding a TVS or RC snubber to protect against voltage overshoot, especially in automotive or industrial environments.
How does the leakage current of the MMDT3904_R1_00001 impact battery-powered designs when used as a switch in a sleep-mode circuit, and can it reliably replace a MOSFET in ultra-low-power applications?
With a maximum collector cutoff current of 50nA, the MMDT3904_R1_00001 exhibits low leakage suitable for many battery-powered applications, but it is not a true substitute for a low-leakage MOSFET (e.g., DMG2302UX, which has <1nA gate leakage). In sleep-mode circuits where microamps matter, the BJT’s base current requirement (even when off) and residual Icbo can accumulate across multiple channels. Use the MMDT3904_R1_00001 only when base drive is actively controlled and total system quiescent current budget allows for ~100–200nA per transistor. For sub-10µA sleep currents, prefer a dedicated load switch or MOSFET solution.
What reliability concerns should I evaluate before designing in the MMDT3904_R1_00001 for an industrial control board operating continuously at 85°C ambient, particularly regarding long-term hFE stability and solder joint integrity?
At 85°C ambient, the MMDT3904_R1_00001’s junction temperature may approach 125–140°C under load, accelerating hFE degradation over time and increasing the risk of thermal runaway in unbalanced dual-transistor configurations. Although MSL-1 ensures no moisture-related failures during assembly, long-term solder joint reliability in high-vibration industrial environments benefits from using solder paste with high fatigue resistance (e.g., SAC305 with Ni doping) and ensuring proper pad design per IPC-7351. Perform thermal cycling tests if the application experiences frequent power cycling, and consider periodic in-circuit gain testing during validation to catch early parametric drift.
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MMDT3904_R1_00001 CAD Models
Panjit International Inc. MMDT3904_R1_00001 PCB symbols & footprints
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