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MBR20200FCT_T0_00001
Panjit International Inc.
DIODE ARR SCHOTT 200V ITO220AB
20133 Pcs New Original In Stock
Diode Array 1 Pair Common Cathode 200 V 20A Through Hole TO-220-3 Full Pack
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5.0 / 5.0
- (410 Ratings)
MBR20200FCT_T0_00001
Product Overview
12993108
DiGi Electronics Part Number
MBR20200FCT_T0_00001-DGManufacturer
Panjit International Inc.
MBR20200FCT_T0_00001
Description
DIODE ARR SCHOTT 200V ITO220ABInventory
20133 Pcs New Original In Stock
Diode Array 1 Pair Common Cathode 200 V 20A Through Hole TO-220-3 Full Pack
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
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MBR20200FCT_T0_00001 Technical Specifications
Category
Diodes, Rectifiers, Diode Arrays
Packaging
Tube
Series
-
Product Status
Active
Diode Configuration
1 Pair Common Cathode
Technology
Schottky
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io) (per Diode)
20A
Voltage - Forward (Vf) (Max) @ If
900 mV @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
50 µA @ 200 V
Operating Temperature - Junction
-65°C ~ 175°C
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
ITO-220AB
Base Product Number
MBR20200
Datasheet & Documents
HTML Datasheet
MBR20200FCT_T0_00001-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Additional Information
Other Names
3757-MBR20200FCT_T0_00001
Standard Package
50
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
他們的價格屬於親民範圍，客服更是熱心又有耐心。
Dec 02, 2025
每次購買都能感受到他們的用心，產品的耐用度和品質都超乎預期，非常滿意！
Dec 02, 2025
購入後のサポートが丁寧で、問題解決もスムーズでした。長くお付き合いしたい企業です。
Dec 02, 2025
I am highly satisfied with the variety and honesty behind their pricing.
Dec 02, 2025
I've recommended DiGi to many friends because of their exceptional quality.
Dec 02, 2025
The after-sales support from DiGi Electronics is prompt, professional, and truly customer-oriented.
Dec 02, 2025
DiGi Electronics excels in optimizing logistics processes, resulting in faster delivery schedules.
Dec 02, 2025
Their efforts towards eco-conscious packaging are truly commendable and inspiring.
Dec 02, 2025
They back up their products with excellent customer service.
Dec 02, 2025
Support staff was patient and helpful, making sure I understood all the details of my purchase.
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Frequently Asked Questions (FAQ)
What are the thermal design considerations when replacing a MUR20200 in a high-current SMPS with the MBR20200FCT_T0_00001, and how does junction-to-case thermal resistance affect heatsinking requirements?
When substituting the MUR20200 with the MBR20200FCT_T0_00001 in a switch-mode power supply, engineers must account for the MBR20200FCT_T0_00001's higher forward voltage under certain loads and its TO-220AB mechanical compatibility. The junction-to-case thermal resistance of approximately 1.5°C/W requires effective heatsinking, especially near the 20A average current limit. Use a thermally conductive insulator and sufficient copper mass to maintain junction temperature below 150°C under full load, particularly since Schottky diodes like the MBR20200FCT_T0_00001 are more sensitive to thermal runaway at elevated temperatures due to increased reverse leakage current.
Can the MBR20200FCT_T0_00001 be used as a drop-in replacement for STTH20R06 in reverse-voltage protection circuits, and what are the risks related to leakage current at elevated temperatures?
While the MBR20200FCT_T0_00001 shares a similar 200V rating and 20A current capacity with the STTH20R06, it is not a direct replacement in all cases due to technology differences—Schottky vs. ultra-fast PN junction. The MBR20200FCT_T0_00001 exhibits higher reverse leakage current, up to 50 µA at 200V and 25°C, which can increase exponentially at junction temperatures above 125°C. In reverse-polarity protection applications, this could lead to increased standby power loss or false triggering in sensing circuits. Thermal derating and leakage-sensitive control logic should be carefully evaluated before substitution.
How does the forward voltage drop of the MBR20200FCT_T0_00001 at 15A impact efficiency in a dual-diode freewheeling configuration, and what PCB layout practices minimize conduction losses?
The MBR20200FCT_T0_00001 has a typical forward voltage of 850 mV at 10A, which extrapolates to approximately 950–1000 mV at 15A, leading to significant conduction losses of ~14.25W for two diodes in parallel under continuous operation. To maximize efficiency, use wide copper traces (≥5mm), multiple vias for thermal relief, and minimize loop inductance in the freewheeling path. Ensure symmetrical routing to prevent current imbalance, especially if both diodes in the common-cathode pair are utilized, and consider forced-air cooling if ambient exceeds 60°C.
What reliability risks arise when operating the MBR20200FCT_T0_00001 near its 175°C junction temperature limit in high-ambient industrial environments, and how can thermal stress be mitigated?
Operating the MBR20200FCT_T0_00001 near its 175°C maximum junction temperature increases long-term degradation risks, including bond wire fatigue and encapsulation cracking due to thermal cycling. In industrial environments with ambient temperatures above 85°C, derate the maximum forward current by at least 20% and monitor actual junction temperature using thermal imaging or on-board sensors. Mount the MBR20200FCT_T0_00001 on a shared heatsink with other power devices cautiously—ensure thermal coupling does not create hotspots. Use thermal interface material with low thermal resistance to improve reliability over 10+ year operational life.
In a full-wave rectifier design using the MBR20200FCT_T0_00001 dual common-cathode configuration, how does reverse recovery differ from standard PN rectifiers like the 1N5408, and what EMI implications should be considered?
The MBR20200FCT_T0_00001, being a Schottky diode, offers near-zero reverse recovery time due to its majority-carrier conduction, unlike the 1N5408 which exhibits significant reverse recovery charge (up to 30µs). This reduces switching losses and high-frequency ringing in rectifier stages, improving efficiency and lowering EMI. However, the lower junction capacitance of the MBR20200FCT_T0_00001 can lead to faster voltage transients, potentially increasing radiated noise in poorly filtered designs. Use RC snubbers across the transformer secondary and ensure input filtering to mitigate high-frequency emissions in EMI-sensitive applications.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
MBR20200FCT_T0_00001 CAD Models
Panjit International Inc. MBR20200FCT_T0_00001 PCB symbols & footprints
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