MBR1060HEWS_R1_00001 >
MBR1060HEWS_R1_00001
Panjit International Inc.
DIODE SCHOTTKY 60V 1A SOD323HE
35324 Pcs New Original In Stock
Diode 60 V 1A Surface Mount SOD-323HE
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MBR1060HEWS_R1_00001 Panjit International Inc.
5.0 / 5.0 - (187 Ratings)

MBR1060HEWS_R1_00001

Product Overview

12964660

DiGi Electronics Part Number

MBR1060HEWS_R1_00001-DG
MBR1060HEWS_R1_00001

Description

DIODE SCHOTTKY 60V 1A SOD323HE

Inventory

35324 Pcs New Original In Stock
Diode 60 V 1A Surface Mount SOD-323HE
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 10 0.0480 0.4800
  • 100 0.0382 3.8200
  • 300 0.0334 10.0200
  • 1000 0.0297 29.7000
  • 5000 0.0267 133.5000
  • 10000 0.0253 253.0000
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MBR1060HEWS_R1_00001 Technical Specifications

Category Diodes, Rectifiers, Single Diodes

Manufacturer PANJIT

Packaging Tape & Reel (TR)

Series -

Product Status Active

Technology Schottky

Voltage - DC Reverse (Vr) (Max) 60 V

Current - Average Rectified (Io) 1A

Voltage - Forward (Vf) (Max) @ If 680 mV @ 1 A

Speed Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr 50 µA @ 60 V

Capacitance @ Vr, F -

Mounting Type Surface Mount

Package / Case SC-90, SOD-323F

Supplier Device Package SOD-323HE

Operating Temperature - Junction -55°C ~ 150°C

Base Product Number MBR106

Datasheet & Documents

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
3757-MBR1060HEWS_R1_00001DKR
3757-MBR1060HEWS_R1_00001TR
Standard Package
5,000

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
RB160VYM-60FHTR
Rohm Semiconductor
4390
RB160VYM-60FHTR-DG
0.0253
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5.0/5.0-(Show up to 5 Ratings)
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Dec 02, 2025
5.0
물류적 효율성과 고객 서비스 모두 매우 뛰어나서, 다른 곳과 차별화된 점이 확실히 느껴집니다.
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Frequently Asked Questions (FAQ)

Can I use the MBR1060HEWS_R1_00001 Schottky diode to replace a Vishay SS1H6 in a 48V DC/DC converter output rectification stage, and what are the key reliability risks if the ambient temperature exceeds 100°C?

The MBR1060HEWS_R1_00001 is electrically compatible with the Vishay SS1H6 in terms of voltage (60V vs. 60V) and current (1A average), but critical differences exist under high-temperature operation. While both diodes have a 150°C max junction temperature, the MBR1060HEWS_R1_00001’s reverse leakage current (50 µA @ 60V) increases significantly with temperature—potentially doubling or tripling above 100°C—leading to higher power loss and thermal runaway risk in compact layouts. Additionally, the SOD-323HE package has lower thermal mass than the SS1H6’s SMA package, reducing heat dissipation capability. If your design operates above 100°C ambient, ensure adequate PCB copper pour for thermal relief and verify junction temperature stays below 125°C under full load to avoid premature aging. A safer alternative may be a diode in a larger package like the DFLS160-7 (DPAK) for better thermal performance.

What layout considerations are critical when integrating the MBR1060HEWS_R1_00001 into a high-frequency switching circuit operating at 500 kHz, and how does its parasitic capacitance impact signal integrity?

Although the datasheet does not specify junction capacitance for the MBR1060HEWS_R1_00001, typical Schottky diodes in SOD-323HE packages exhibit 10–20 pF under 60V reverse bias. At 500 kHz, this capacitance forms an unintended low-pass filter with trace inductance, potentially causing ringing or delayed turn-off in fast-switching nodes. To mitigate this, minimize loop area between the diode, inductor, and output capacitor by placing the MBR1060HEWS_R1_00001 as close as possible to the switching node. Use a solid ground plane beneath the device and avoid long anode/cathode traces. If signal integrity issues persist, consider adding a small snubber (e.g., 10Ω + 100pF) across the diode. For ultra-high-frequency applications (>1 MHz), evaluate lower-capacitance alternatives like the Diodes Inc. BAT54HW (SOD-523), though at the cost of lower current rating.

Is the MBR1060HEWS_R1_00001 suitable for reverse polarity protection in a 48V industrial sensor interface, and what failure modes should I anticipate during hot-plugging or load dump events?

Yes, the MBR1060HEWS_R1_00001 can be used for reverse polarity protection in 48V systems due to its 60V reverse voltage rating and low forward voltage (680 mV @ 1A), which minimizes power loss. However, during hot-plugging or inductive load dumps, transient voltages can exceed 60V even briefly, risking avalanche breakdown since the part lacks specified breakdown energy (EAS). Unlike TVS diodes or diodes with built-in ESD structures, the MBR1060HEWS_R1_00001 offers no guaranteed surge immunity. To protect it, place a bidirectional TVS diode (e.g., SMAJ58A) upstream and ensure series impedance (e.g., ferrite bead or resistor) limits inrush current. Also, verify that the total energy during fault conditions remains below the diode’s unclamped inductive switching (UIS) capability—though not specified, assume it’s minimal. Without these safeguards, repeated transients may cause latent degradation or sudden open-circuit failure.

How does the moisture sensitivity level (MSL 1) of the MBR1060HEWS_R1_00001 affect assembly processes, and can it be safely used in reflow profiles exceeding 260°C peak temperature?

The MBR1060HEWS_R1_00001’s MSL 1 rating means it is immune to moisture-induced damage during standard SMT assembly, allowing unlimited floor life without dry packing—ideal for high-mix production environments. However, MSL 1 does not imply tolerance to excessive thermal stress. The SOD-323HE package uses a lead-free solder die attach and mold compound rated for peak reflow temperatures up to 260°C (per JEDEC J-STD-020). Exceeding this—even briefly—can delaminate internal interfaces or degrade the Schottky barrier metal, increasing forward voltage drift over time. Always adhere to Panjit’s recommended reflow profile (typically 245–250°C peak with <20s above 217°C). If your process uses >260°C peaks (e.g., for high-temp solder), consider pre-baking or switching to a more robust package like SOD-123FL, which often handles higher thermal cycles better due to improved mold compound adhesion.

When comparing the MBR1060HEWS_R1_00001 to the ON Semiconductor MBR160S1 (also 60V/1A Schottky in SOD-323), what are the trade-offs in forward voltage stability and long-term reliability under continuous 0.8A load in a sealed enclosure?

Both diodes share similar electrical specs, but the MBR1060HEWS_R1_00001 typically exhibits slightly higher forward voltage drift over time under sustained high-current operation due to differences in barrier metal formulation and package thermal resistance. In a sealed enclosure with limited airflow, the MBR1060HEWS_R1_00001 may run 10–15°C hotter than the MBR160S1 at 0.8A due to marginally higher RθJA (~200°C/W vs. ~180°C/W estimated). This elevates junction temperature, accelerating metal migration and increasing Vf drift—potentially affecting efficiency in precision power paths. Additionally, Panjit’s process may show wider Vf binning (±50 mV) compared to ON Semiconductor’s tighter control. For mission-critical applications, perform burn-in testing at max ambient and load. If thermal headroom is tight, consider derating the MBR1060HEWS_R1_00001 to 0.7A continuous or switching to a diode with lower thermal resistance, such as the Central Semiconductor CMDSH-3 (SOD-323) or a DFN-packaged alternative.

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