ES1G_R1_00001 >
ES1G_R1_00001
Panjit International Inc.
DIODE GEN PURP 400V 1A SMA
92755 Pcs New Original In Stock
Diode 400 V 1A Surface Mount SMA (DO-214AC)
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ES1G_R1_00001 Panjit International Inc.
5.0 / 5.0 - (149 Ratings)

ES1G_R1_00001

Product Overview

12965257

DiGi Electronics Part Number

ES1G_R1_00001-DG
ES1G_R1_00001

Description

DIODE GEN PURP 400V 1A SMA

Inventory

92755 Pcs New Original In Stock
Diode 400 V 1A Surface Mount SMA (DO-214AC)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 10 0.0606 0.6060
  • 100 0.0482 4.8200
  • 300 0.0420 12.6000
  • 1800 0.0375 67.5000
  • 5400 0.0338 182.5200
  • 10800 0.0319 344.5200
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ES1G_R1_00001 Technical Specifications

Category Diodes, Rectifiers, Single Diodes

Manufacturer PANJIT

Packaging Tape & Reel (TR)

Series -

Product Status Active

Technology Standard

Voltage - DC Reverse (Vr) (Max) 400 V

Current - Average Rectified (Io) 1A

Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A

Speed Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) 35 ns

Current - Reverse Leakage @ Vr 1 µA @ 400 V

Capacitance @ Vr, F 7pF @ 4V, 1MHz

Mounting Type Surface Mount

Package / Case DO-214AC, SMA

Supplier Device Package SMA (DO-214AC)

Operating Temperature - Junction -55°C ~ 150°C

Base Product Number ES1G

Datasheet & Documents

HTML Datasheet

ES1G_R1_00001-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
3757-ES1G_R1_00001TR
3757-ES1G_R1_00001CT
3757-ES1G_R1_00001DKR
Standard Package
1,800

Alternative Parts

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AES1G-HF
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AES1G-HF-DG
0.0319
Parametric Equivalent
MURS1G-TP
Micro Commercial Co
1015
MURS1G-TP-DG
0.0319
Parametric Equivalent
CD214A-F1400
Bourns Inc.
7963
CD214A-F1400-DG
0.0319
Parametric Equivalent
ES1G R3G
Taiwan Semiconductor Corporation
1000
ES1G R3G-DG
0.0319
Similar
ES1G-HF
Comchip Technology
4706
ES1G-HF-DG
0.0319
Parametric Equivalent

Reviews

5.0/5.0-(Show up to 5 Ratings)
행***무
Dec 02, 2025
5.0
포장 걱정을 거의 할 필요 없을 정도로 튼튼했고, 배송 추적도 상세하게 이루어졌습니다.
Arôme***leurs
Dec 02, 2025
5.0
J’ai été impressionné par leur réactivité lors de la résolution d’un petit problème post-achat.
夜***い
Dec 02, 2025
5.0
スタッフの対応が早く、問い合わせにも丁寧に答えてくれるため満足しています。
Rad***tSky
Dec 02, 2025
5.0
Excellent shipping speed! The package was sealed tightly and protected well.
Quiet***enity
Dec 02, 2025
5.0
Shipping was handled efficiently, with clear tracking information provided throughout.
Pure***mony
Dec 02, 2025
5.0
They provide excellent technical support post-purchase, guiding me through setup and troubleshooting.
Spark***ghtly
Dec 02, 2025
5.0
Shipping stability and excellent after-sales support are what stand out most about DiGi Electronics.
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Frequently Asked Questions (FAQ)

Can the ES1G_R1_00001 diode safely replace a 1N4007 in a 120VAC rectifier circuit without risking premature failure due to reverse recovery characteristics?

While both the ES1G_R1_00001 and 1N4007 are rated for 1A and >400V, the ES1G_R1_00001 has a fast reverse recovery time (35 ns vs. ~30 µs for the 1N4007), making it significantly more efficient in high-frequency or inductive load applications. However, in simple 60Hz line-frequency rectifiers, the 1N4007’s slower recovery is acceptable and often preferred for its robustness under surge conditions. Replacing it with the ES1G_R1_00001 is electrically feasible and improves efficiency slightly, but ensure your layout minimizes parasitic inductance—otherwise, the faster switching of the ES1G_R1_00001 can cause voltage spikes that stress downstream components. For cost-sensitive, low-frequency designs, sticking with the 1N4007 may offer better surge tolerance; for compact or SMPS-style designs, the ES1G_R1_00001 is a superior upgrade.

Is the ES1G_R1_00001 suitable for use in a flyback converter secondary rectification stage operating at 100 kHz, and how does its capacitance affect snubber design?

Yes, the ES1G_R1_00001 is well-suited for 100 kHz flyback secondary rectification due to its fast recovery time (35 ns) and low junction capacitance (7 pF @ 4V). However, even with low capacitance, parasitic board inductance interacting with fast di/dt transitions can induce ringing. You should include a small RC snubber (e.g., 100Ω + 100pF) across the diode to dampen high-frequency oscillations. The low capacitance of the ES1G_R1_00001 reduces reactive losses compared to slower diodes like the UF4007, but don’t assume snubberless operation—always validate with an oscilloscope under full load. Also, ensure adequate copper area for thermal management, as SMA packages have limited heat dissipation at elevated ambient temperatures.

Can I substitute the ES1G_R1_00001 with a Vishay VS-1A or ON Semiconductor MURS140T3G in a high-reliability industrial power supply, and what are the key trade-offs?

The Vishay VS-1A (400V, 1A, 75 ns trr) and ON Semi MURS140T3G (400V, 1A, 35 ns trr) are electrically comparable to the ES1G_R1_00001, but critical differences exist. The MURS140T3G matches the ES1G_R1_00001’s 35 ns recovery and is a direct functional replacement, though Panjit’s device typically shows lower forward voltage (1.25V vs. ~1.3V for MURS140T3G at 1A), yielding marginally better efficiency. The VS-1A is slower (75 ns), which may increase switching losses in >50 kHz applications. For high-reliability systems, verify long-term availability and qual data—Panjit offers strong cost-performance for commercial/industrial use, while Vishay and ON Semi may provide broader automotive-grade documentation. Always cross-check MSL and reflow profiles; the ES1G_R1_00001’s MSL 1 rating simplifies assembly vs. higher MSL competitors.

What thermal management considerations are critical when using the ES1G_R1_00001 in a sealed enclosure with ambient temperatures up to 85°C, given its SMA package limitations?

The ES1G_R1_00001 in an SMA (DO-214AC) package has limited thermal dissipation—typically ~20–25°C/W junction-to-ambient without a heatsink. At 85°C ambient and 1A continuous current (1.25W dissipation), the junction temperature can exceed 150°C unless careful layout is used. To mitigate this, maximize copper area on the PCB pads (use thermal reliefs if needed), connect to internal ground planes, and avoid placing heat-generating components nearby. Consider derating the current to ~0.7A under these conditions. If full 1A operation is required, evaluate switching to a larger package like SMC (e.g., ES2G) or adding a small clip-on heatsink. Always perform thermal imaging or simulation under worst-case load to confirm Tj remains below 150°C.

Does the ES1G_R1_00001’s low reverse leakage current (1 µA @ 400V) make it a better choice than general-purpose rectifiers in battery-powered offline circuits where standby power matters?

Yes, the ES1G_R1_00001’s reverse leakage of 1 µA @ 400V is significantly lower than typical 1N400x-series diodes (5–10 µA), making it advantageous in low-power offline applications like standby supplies or energy harvesting circuits where minimizing quiescent drain is critical. Over time, this reduced leakage can extend battery life or improve efficiency in always-on systems. However, ensure your total system leakage budget accounts for other components (e.g., capacitors, optocouplers)—the diode’s contribution, while improved, may be marginal compared to overall losses. Also, verify that the lower leakage doesn’t come at the cost of higher sensitivity to ESD or voltage transients; the ES1G_R1_00001 lacks built-in avalanche capability, so consider adding transient suppression if exposed to inductive kickback or surges.

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