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2N7002K_R1_00001
Panjit International Inc.
SOT-23, MOSFET
192591 Pcs New Original In Stock
N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23
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5.0 / 5.0
- (179 Ratings)
2N7002K_R1_00001
Product Overview
12964797
DiGi Electronics Part Number
2N7002K_R1_00001-DGManufacturer
Panjit International Inc.
2N7002K_R1_00001
Description
SOT-23, MOSFETInventory
192591 Pcs New Original In Stock
N-Channel 60 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23
Quantity
Minimum 1
Minimum 1
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2N7002K_R1_00001 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
35 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
2N7002
Datasheet & Documents
HTML Datasheet
2N7002K_R1_00001-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
3757-2N7002K_R1_00001TR
Standard Package
3,000
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
구매할 때마다 선택의 폭이 넓고 가격도 공정해서 만족도가 높았습니다.
Dec 02, 2025
Je recommande vivement DiGi Electronics pour des produits fiables et un service client de qualité.
Dec 02, 2025
価格の事前公開が徹底されていて、誤解なく安心して選べるのが良いです。
Dec 02, 2025
Thoroughly protected packaging ensured the product arrived flawless.
Dec 02, 2025
I appreciate their commitment to offering the best prices in the market.
Dec 02, 2025
Timely shipment combined with quality packaging makes working with them hassle-free.
Dec 02, 2025
The value for money is exceptional, especially considering the excellent packaging.
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Frequently Asked Questions (FAQ)
When replacing a 2N7002 in a legacy SOT-23 design, what are the critical parameters to verify for the Panjit 2N7002K_R1_00001 to ensure compatibility and avoid premature failure?
When substituting the Panjit 2N7002K_R1_00001 for an existing 2N7002, pay close attention to the gate threshold voltage (Vgs(th)), drain-source breakdown voltage (Vdss), and especially the continuous drain current (Id) under your specific operating temperature. While the datasheet highlights 300mA (Ta) for the 2N7002K_R1_00001, ensure your application's peak and average current demands are well within this limit, considering thermal derating. Also, verify that the drive voltage range provided by your microcontroller or driver circuit is sufficient to fully enhance the 2N7002K_R1_00001, as it requires up to 10V for its lowest Rds(on) specification.
What is the primary design risk when operating the Panjit 2N7002K_R1_00001 near its maximum continuous drain current (300mA) in a compact SOT-23 package, and how can this risk be mitigated?
The primary design risk when operating the Panjit 2N7002K_R1_00001 near its 300mA continuous drain current is thermal runaway. The 350mW power dissipation limit in a SOT-23 package means that even moderate continuous currents will generate significant heat. To mitigate this, implement effective PCB heatsinking with ample copper pour connected to the drain pin, and consider a heatsink if ambient temperatures are elevated. Furthermore, ensure your operating duty cycle is significantly lower than 100% if the current approaches 300mA, and perform thorough thermal simulations to validate performance under worst-case conditions.
For a battery-powered device requiring low quiescent current and fast switching, how does the Gate Charge (Qg) of the Panjit 2N7002K_R1_00001 impact overall power consumption, and what are optimal gate drive strategies to minimize switching losses?
The Gate Charge (Qg) of the Panjit 2N7002K_R1_00001, specified at 0.8 nC, directly influences the power consumed during switching transitions. A higher Qg requires more charge to drive the gate, leading to increased switching losses, especially at higher frequencies. For battery-powered applications, optimize your gate drive circuit by using a dedicated gate driver IC that can supply sufficient current pulses to charge and discharge the gate capacitance quickly. Avoid direct microcontroller driving if high frequencies are involved, as this can lead to slow transitions and wasted energy. Employing a pull-down resistor on the gate will ensure a rapid turn-off, further minimizing switching losses.
If a design requires switching a load that can momentarily surge to 500mA, can the Panjit 2N7002K_R1_00001 safely handle this transient current, or is a higher-current MOSFET a necessary component choice?
The Panjit 2N7002K_R1_00001's continuous drain current (Id) is rated at 300mA (Ta). While it can likely handle a brief, short-duration surge of 500mA without immediate destruction, this is highly dependent on the pulse width, ambient temperature, and the thermal mass of the PCB. Operating consistently near or exceeding the continuous rating significantly increases the risk of exceeding the junction temperature (TJ) limits, leading to degraded performance or permanent damage. For a 500mA momentary surge, it is strongly recommended to select a MOSFET with a higher continuous current rating (e.g., >500mA) to ensure reliable operation and avoid exceeding the power dissipation limits of the 2N7002K_R1_00001.
What are the potential reliability concerns when using the Panjit 2N7002K_R1_00001 in an industrial control application where the ambient operating temperature might fluctuate between 60°C and 85°C, particularly regarding its maximum Rds(on) performance?
In industrial control applications with ambient temperatures ranging from 60°C to 85°C, a primary reliability concern for the Panjit 2N7002K_R1_00001 is the significant increase in Rds(on) with temperature. The Rds(on) of 3 Ohms is specified at 10V Vgs and 500mA Id. As temperature rises, this on-resistance will increase, leading to higher power dissipation (I²R losses) and thus exacerbating the temperature issue, potentially creating a feedback loop. This increased power dissipation can exceed the device's 350mW rating, leading to premature failure. To mitigate this, ensure your gate drive voltage is consistently 10V or higher to achieve the lowest possible Rds(on) at operating temperatures, and critically, derate the continuous drain current significantly based on expected operating temperatures. Consider a MOSFET with a lower Rds(on) at elevated temperatures for improved reliability in such environments.
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2N7002K_R1_00001 CAD Models
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