PDTC114ET215 NXP Semiconductors
5.0 / 5.0 - (94 Ratings)

PDTC114ET215

Product Overview

12947774

DiGi Electronics Part Number

PDTC114ET215-DG
PDTC114ET215

Description

TRANS PREBIAS NPN 50V SOT23-3

Inventory

RFQ Online
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount SOT23-3 (TO-236)
Quantity
Minimum 1

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PDTC114ET215 Technical Specifications

Category Bipolar (BJT), Single, Pre-Biased Bipolar Transistors

Manufacturer NXP Semiconductors

Packaging -

Series -

Product Status Active

Transistor Type NPN - Pre-Biased

Current - Collector (Ic) (Max) 100 mA

Voltage - Collector Emitter Breakdown (Max) 50 V

Resistor - Base (R1) 10 kOhms

Resistor - Emitter Base (R2) 10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA

Current - Collector Cutoff (Max) 1µA

Frequency - Transition 230 MHz

Power - Max 250 mW

Mounting Type Surface Mount

Package / Case TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT23-3 (TO-236)

Datasheet & Documents

HTML Datasheet

PDTC114ET215-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075

Additional Information

Other Names
2156-PDTC114ET215-NXP
NEXPHIPDTC114ET215
Standard Package
1
DIGI Certification
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