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PDTC114ET215
NXP Semiconductors
TRANS PREBIAS NPN 50V SOT23-3
91711 Pcs New Original In Stock
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount SOT23-3 (TO-236)
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5.0 / 5.0
- (115 Ratings)
PDTC114ET215
Product Overview
12947774
DiGi Electronics Part Number
PDTC114ET215-DGManufacturer
NXP Semiconductors
PDTC114ET215
Description
TRANS PREBIAS NPN 50V SOT23-3Inventory
91711 Pcs New Original In Stock
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount SOT23-3 (TO-236)
Quantity
Minimum 1
Minimum 1
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PDTC114ET215 Technical Specifications
Category
Transistors, Bipolar (BJT), Single, Pre-Biased Bipolar Transistors
Packaging
-
Series
-
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT23-3 (TO-236)
Datasheet & Documents
HTML Datasheet
PDTC114ET215-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Additional Information
Other Names
2156-PDTC114ET215-NXP
NEXPHIPDTC114ET215
Standard Package
1
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Perfekte Tracking-Details ermöglichen mir eine entspannte Wartezeit auf meine Bestellung.
Dec 02, 2025
とても速い配送と親切なサポートに感謝しています。また利用したいです。
Dec 02, 2025
Their post-purchase support is top-notch and highly dependable.
Dec 02, 2025
DiGi Electronics offers a seamless shopping experience thanks to their focus on consistency and transparency.
Dec 02, 2025
I recommend DiGi Electronics for their outstanding product quality and support.
Dec 02, 2025
I received my order sooner than I anticipated, thanks to their prompt shipping services.
Dec 02, 2025
The after-sales support team is knowledgeable and always ready to assist with any concerns.
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Frequently Asked Questions (FAQ)
Can I use the PDTC114ET215 to replace a discrete NPN transistor with external base resistors in a low-power switching circuit, and what are the risks of doing so without redesigning the bias network?
Yes, the PDTC144ET215 can replace discrete NPN transistors like the MMBT2222A in low-power switching applications, but only if the original design’s base drive current and voltage levels are compatible with its internal 10 kΩ base resistor (R1) and 10 kΩ emitter-base resistor (R2). The main risk is improper biasing—if the driving signal cannot supply enough current through R1 to saturate the transistor, the PDTC114ET215 may operate in the linear region, leading to excessive power dissipation and thermal runaway. Always verify that your microcontroller or logic gate can source at least 0.5 mA (for 5V logic) to ensure saturation, and avoid using it in high-speed or high-current scenarios where external resistor tuning was critical.
What happens if I drive the PDTC114ET215 with a 3.3V GPIO pin, and how does the internal biasing affect turn-on reliability compared to a standard BJT like the BC847?
Driving the PDTC114ET215 with a 3.3V GPIO is generally feasible due to its integrated 10 kΩ base resistor, which limits base current and allows compatibility with low-voltage logic. However, the internal R2 (10 kΩ from base to emitter) creates a voltage divider that slightly raises the effective turn-on threshold, potentially reducing noise margin. Compared to the BC847—which requires external base current control—the PDTC114ET215 offers simpler layout but less flexibility. In noisy environments or with long traces, this fixed biasing may lead to unintended turn-on; mitigate this by adding a small pull-down resistor (e.g., 100 kΩ) at the base pin or ensuring clean signal routing.
Is the PDTC114ET215 suitable for high-frequency signal amplification above 100 MHz, and how does its 230 MHz transition frequency translate to real-world bandwidth in a common-emitter stage?
While the PDTC114ET215 has a transition frequency (fT) of 230 MHz, it is not ideal for high-gain amplification above 50–70 MHz due to the parasitic effects of its internal biasing resistors and package inductance. In a common-emitter configuration, the effective bandwidth is significantly reduced—typically by 30–50%—because R1 and R2 introduce feedback and loading that degrade high-frequency response. For RF applications above 100 MHz, consider alternatives like the BFU520 or MMBTH10. The PDTC114ET215 is better suited for digital switching or low-level signal conditioning below 50 MHz where simplicity outweighs bandwidth needs.
Can I parallel two PDTC114ET215 transistors to increase current handling beyond 100 mA, and what reliability issues should I anticipate?
Paralleling PDTC114ET215 devices to exceed the 100 mA collector current rating is not recommended due to inherent mismatches in hFE and VBE between units, which cause current imbalance and thermal runaway. Even with identical part numbers, the internal resistors are not precision-matched, and slight variations in saturation voltage can lead to one transistor carrying most of the load. This increases localized heating and reduces overall reliability. Instead, select a higher-current pre-biased transistor like the DXT3904T or use a dedicated driver IC. If parallel operation is unavoidable, add small ballast resistors (e.g., 1–5 Ω) in series with each emitter to force current sharing, but expect reduced efficiency and added board space.
How does the PDTC114ET215 compare to the ON Semiconductor NST3904DXV6T1G in terms of integration, thermal performance, and suitability for space-constrained automotive-grade designs?
The PDTC114ET215 (NXP) and NST3904DXV6T1G (ON Semiconductor) are both dual pre-biased NPN transistors in SOT-363 packages, but the PDTC114ET215 is a single-device SOT23-3 part with simpler integration for single-channel applications. While the NST3904DXV6T1G offers dual channels in one package—saving space—it has slightly higher total power dissipation (350 mW vs. 250 mW), which can be a thermal concern in tightly enclosed automotive modules. The PDTC114ET215’s lower profile and single-channel design make it easier to thermally manage and layout in high-density PCBs, but it lacks AEC-Q101 qualification, unlike some variants of the NST3904DXV6T1G. For non-automotive or prototype use, the PDTC114ET215 is cost-effective; for mission-critical automotive systems, verify qualification status and consider the NST3904DXV6T1G with proper derating.
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PDTC114ET215 CAD Models
NXP Semiconductors PDTC114ET215 PCB symbols & footprints
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