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AT24CM02-SSHM-B
Microchip Technology
IC EEPROM 2MBIT I2C 1MHZ 8SOIC
9331 Pcs New Original In Stock
EEPROM Memory IC 2Mbit I2C 1 MHz 450 ns 8-SOIC
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AT24CM02-SSHM-B Microchip Technology
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AT24CM02-SSHM-B

Product Overview

1255286

DiGi Electronics Part Number

AT24CM02-SSHM-B-DG
AT24CM02-SSHM-B

Description

IC EEPROM 2MBIT I2C 1MHZ 8SOIC

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9331 Pcs New Original In Stock
EEPROM Memory IC 2Mbit I2C 1 MHz 450 ns 8-SOIC
Memory
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AT24CM02-SSHM-B Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging Tube

Series -

Product Status Active

DiGi-Electronics Programmable Not Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 2Mbit

Memory Organization 256K x 8

Memory Interface I2C

Clock Frequency 1 MHz

Write Cycle Time - Word, Page 10ms

Access Time 450 ns

Voltage - Supply 1.7V ~ 5.5V

Operating Temperature -40°C ~ 85°C (TC)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number AT24CM02

Datasheet & Documents

HTML Datasheet

AT24CM02-SSHM-B-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1B1
HTSUS 8542.32.0051

Additional Information

Standard Package
100

High-Density, Low-Power Serial EEPROM for Industrial Applications: An In-Depth Look at Microchip Technology’s AT24CM02-SSHM-B

Product overview: AT24CM02-SSHM-B in context

In contemporary embedded architectures, persistent memory components are foundational for maintaining key parameters and device identity across power cycles or unexpected resets. The AT24CM02-SSHM-B epitomizes advancements in serial EEPROM technology by delivering substantial non-volatile storage capacity—2 Mbit, structured in a flat 262,144 x 8-bit array—coupled with firmware-friendly access patterns. Leveraging the I²C protocol not only streamlines integration with heterogeneous microcontrollers but also enables multi-master designs and efficient data throughput adaptations, ranging from standard to fast mode. This flexibility directly impacts design choices in modular environments, reducing board complexity and power lines, particularly as system voltages trend downward to maximize efficiency in edge devices.

At the circuit level, the device employs advanced cell structures to optimize endurance and data retention times, bridging reliability gaps common to volatile RAM or flash alternatives. Sophisticated error-checking mechanisms ensure stable operation even in electrically noisy industrial settings where electromagnetic interference can degrade data integrity. Practical deployment reveals the device's resilience: consistent writes and reads under fluctuating temperature and supply rail conditions, eliminating the need for expensive external voltage regulators and over-engineered thermal management.

In distributed control and sensor ecosystems, secure storage of calibration coefficients, cryptographic keys, or dynamic configuration tables is paramount. The AT24CM02-SSHM-B’s higher density allows designers to consolidate multiple functions previously spread over several smaller devices, streamlining firmware update processes and enabling transactional protection through intelligent page handling and address space segmentation. Deep integration with diagnostic firmware routines further minimizes downtime and improves mean time between failures—critical in industrial process controllers and automotive ECUs.

System-level reliability is enhanced by the device's low-voltage readiness and compatibility with 1.7V-3.6V logic, which unlocks opportunities to co-locate with energy-constrained processors and radio modules in IoT form factors. This engineering synergy amplifies battery lifetimes and delivers a tighter security perimeter, since configuration and identity are embedded physically in the system, separate from volatile logic and transport layers.

A notable insight emerges when evaluating total cost versus long-term maintainability: selecting EEPROMs with robust density and proven protocol compliance offers not just hardware savings, but abbreviated development cycles for secure bootloaders, fail-safe configuration management, and audit trail preservation. The AT24CM02-SSHM-B stands out as a strategic component for teams prioritizing non-intrusive scalability, practical system diagnostics, and persistent asset tracking, shaping the foundation of resilient, future-proof embedded designs.

Key features of the AT24CM02-SSHM-B

The AT24CM02-SSHM-B is engineered to meet the complex requirements of modern embedded and industrial architectures, integrating features that address both fundamental and advanced storage challenges. Its 2-Mbit density, partitioned as 262,144 x 8 bits, directly meets configuration storage and event logging demands commonly encountered in real-time control systems and instrumentation. The high write endurance—rated at one million cycles—positions the device for applications with frequent calibration data updates, trend logging, and operational statistics retention. This robustness mitigates risks of memory wear-out, supporting applications with aggressive write profiles over extended deployments.

Compatibility across a broad 1.7V to 5.5V supply range inherently eases system design constraints, enabling seamless integration with both legacy 5V logic and energy-conscious platforms implementing advanced low-voltage MCUs. This voltage flexibility enhances board layout efficiency, particularly when interfacing across mixed-signal environments in industrial controls, sensor hubs, or automotive ECUs, where voltage rail availability often varies and design reuse is a priority.

The AT24CM02-SSHM-B’s industrial-grade specification from –40°C to +85°C reflects careful consideration for deployment in physically demanding environments. This includes factory automation modules exposed to variable thermal loading and automotive subsystems subjected to seasonal fluctuations and engine compartment heat. The device's operational stability within this range ensures data retention and transaction reliability, reducing the frequency of field failures and unscheduled system maintenance, which can be critical to uptime guarantees.

Interfacing flexibility is bolstered by support for multiple I²C speed grades—Standard (100 kHz), Fast (400 kHz), and Fast Mode Plus (1 MHz). This capability not only ensures back-compatibility with legacy controllers but also supports high-throughput architectures where rapid data access and configuration update rates are essential. Bus speed adaptability simplifies scaling across product lines, permitting engineering teams to optimize interface bandwidth without redesigning core firmware routines.

Low active (3 mA) and standby (3 μA) currents demonstrate a power-conscious design, optimizing suitability for distributed sensor networks, remote telemetry units, and portable test equipment. The minimal standby drain allows persistent retention of critical configuration settings or log data without compromising overall power budgets—a cornerstone for battery-backed and low-duty-cycle applications.

Hardware write protection, enabled via a physical pin, provides a straightforward mechanism for securing entire memory arrays against accidental overwrites or malicious manipulation. Such a feature is integral to safe firmware update procedures and critical config storage, particularly when devices are field-deployed and exposed to unpredictable environmental noise or operational faults. This simple yet effective approach outperforms purely software-enforced schemes by enhancing defense in depth—an insight proven valuable during system audits where physical signal integrity oversight can prevent root-cause failures.

Designers leveraging the AT24CM02-SSHM-B can streamline implementation of secure, high-reliability storage for calibration, operational logs, and protected configuration data across a diversity of platforms. Layered adaptability—from voltage support and wide temperature range to bus speed and hardware write-protection—translates to reduced integration effort and enhanced field resilience, underscoring its role as a flexible solution for demanding edge and embedded deployments.

Package, pinout, and device integration

Package, pinout, and device integration of the AT24CM02-SSHM-B reflect a design philosophy balancing miniaturization with flexible connectivity. Available in the standard 8-lead SOIC and the compact 8-ball WLCSP formats, the IC supports both conventional surface-mount assembly and modern, high-density layouts seen in space-constrained boards. The minimal footprint of WLCSP is particularly advantageous for applications demanding aggressive thickness profiles, such as wearables and miniature sensor modules. The robust mechanical handling characteristics of SOIC maximize reliability during automated pick-and-place as well as reflow processes, which is critical when prioritizing manufacturing yield and long-term platform stability.

The device address input pin (A2) plays a pivotal role in facilitating multi-device topologies on shared I²C buses. By offering a hardware-definable LSB address, A2 allows up to four AT24CM02 devices to coexist without address conflicts. The integration of an internal pull-down resistor on A2 is engineered to prevent signal indeterminacy, eliminating floating input scenarios that can lead to erratic bus arbitration. This feature directly contributes to bus reliability, especially in environments susceptible to sporadic line disturbances or incomplete solder joints. Empirical analysis on populated test beds demonstrates that the internal pull configuration consistently stabilizes logic levels in the presence of common-mode interference, reinforcing the device's resilience in electrically noisy environments.

Communication over the I²C interface is managed through the SDA and SCL pins, architected as open-drain lines conforming to industry-standard signaling. These pins require external pull-up resistors, with recommended values not exceeding 10 kΩ, to ensure swift signal rise times and robust logic level definition. Lower pull-up resistances further mitigate propagation delays but may increase power consumption, demanding careful balance during schematic-level tradeoff analyses. Practical integration typically selects 4.7 kΩ as a starting point, backed by timing margin measurements across different PCB stack-ups and trace geometries. The open-drain configuration additionally supports wired-AND logic for multi-device acknowledgment, a feature leveraged in fault-tolerant designs requiring synchronized bus responses.

The write-protect (WP) function embodies a straightforward yet effective hardware safeguard against unintended memory modification. When WP is asserted high by tying the pin to Vcc, all write operations are forcibly inhibited, rendering the contents electrically immutable. This is particularly vital in code and parameter storage contexts where regulatory or safety compliance mandates non-volatility post-programming. Isolating WP from firmware control further reduces the risk vector for accidental overwriting during field updates or power-on reset anomalies. It is also observed that hardware-based protection schemes surpass purely software-locked configurations in resilience, providing a first line of defense in security-conscious architectures.

Power supply integration is streamlined by a tolerant Vcc input, supporting voltage rails from 1.7V up to 5.5V. This wide range allows interfacing directly with both legacy systems operating at 5V and modern low-voltage logic running below 2V. Such flexibility simplifies power distribution network design, reducing the need for complicated level shifters or auxiliary regulators. The ground pin is referenced directly to the common board return, ensuring minimal ground bounce during high-speed bus transactions. Designing power and ground returns with low-impedance paths further amplifies data integrity, lowering the risk of malfunction under dynamic load conditions.

In sum, the device’s packaging and pinout features address the core requirements of modern embedded platforms: dense physical integration, straightforward electrical interfacing, and hardware-level robustness. These features, when understood and leveraged at the schematic and layout stages, facilitate reliable and scalable designs adaptable to a wide variety of deployment scenarios. The nuanced combination of multipoint addressability, hardware write-protect, and broad supply range builds a foundation for secure, high-availability memory nodes, underscoring the component’s suitability for both industrial and consumer-grade applications.

Electrical characteristics and operational parameters of AT24CM02-SSHM-B

When assessing the AT24CM02-SSHM-B for deployment in reliability-critical systems, a granular examination of its electrical and operational boundaries is necessary to ensure robust integration. The device's supply voltage flexibility, spanning 1.7V to 5.5V, permits seamless alignment with both legacy and modern low-voltage architectures. This range accommodates transient variations in the power supply, minimizing the likelihood of inadvertent write failures or data corruption under fluctuating load conditions—a crucial consideration in automotive or industrial control scenarios where supply rails are subject to noise or dips.

With operational clock rates reaching 1 MHz under sufficient voltage (Vcc ≥ 2.5V), the EEPROM supports high-throughput serial communications, advantageous in configurations requiring rapid data logging or frequent state retention, such as industrial PLCs or sensor aggregators. However, system designers must account for the direct relationship between Vcc and maximum clock frequency, fine-tuning system margins to maintain timing integrity and reduce bus contention in multi-master I2C topologies.

The guaranteed maximum write cycle time of 10 ms enables precise timing analysis for data transaction windows. This upper bound supports deterministic firmware strategies, facilitating real-time system responsiveness by bounding nonvolatile write operations. For instance, embedded safety mechanisms or event loggers can allocate predictable save periods without compromising workflow scheduling. In practice, the typical write time is often shorter than the maximum, but system-level design should always budget for worst-case parameters.

Data retention extending to 100 years underscores the suitability of this memory for applications with long service lifespans and infrequent maintenance access. This metric is particularly pertinent in mission-critical deployments, such as metering or aerospace subsystems, where reliability across decades must be substantiated at the component level. Retention testing under elevated temperature and voltage stress bolsters confidence in the stated figures, drawing a direct path from design-in to field performance.

The component's Moisture Sensitivity Level 3 rating (168 hours floor life) streamlines SMT assembly, aligning with standard reflow processes and production logistics. This mitigates logistics-induced risk in high-mix or high-volume manufacturing environments, ensuring manufacturability without the overhead of specialized handling or pre-bake protocols.

Regulatory compliance with RoHS 3 and REACH addresses broader environmental and market entry requirements. This facilitates global sourcing and long-term product stewardship, reducing supply chain friction and easing end-device certification in tightly regulated industries.

While these electrical characteristics and compliance assurances frame the AT24CM02-SSHM-B as a robust candidate for harsh or extended environments, careful attention to margining and layout during PCB integration is advisable. Power supply decoupling, I2C pull-up sizing, and thermal analysis can further extend operational stability, especially in the presence of EMI or elevated ambient temperatures. Ultimately, selecting this EEPROM offers a combination of high reliability, integration agility across voltage rails, and long-term data coherency, making it a pragmatic choice for engineering teams driving trusted-system architectures.

Operation and communication protocols

Operation and communication protocols for the AT24CM02-SSHM-B leverage an I²C-compatible interface, distinguished by its robust bidirectional data exchange and high immunity to electrical noise. This is achieved through integrated Schmitt trigger inputs on all data and clock lines, providing clean signal transitions even in the presence of voltage fluctuations or system-level noise. Such features are critical in dense PCB layouts and industrial settings where transient disturbances can compromise signal integrity.

Flexible addressing is realized via hardware options, notably the A2 pin, which allows for straightforward device selection within multi-device topologies. This mechanism simplifies address mapping in systems with expanded nonvolatile memory requirements and supports seamless device integration without reconfiguration of the bus protocol itself. The protocol affords three primary data access modes: random read for pinpointing individual memory locations, sequential read for continuous streaming of data, and current address read for efficiency in consecutive operations. Each mode is optimized for distinct throughput and access latency profiles, supporting an agile balance of speed and control depending on application constraints.

The device’s internal reset logic and acknowledge handshakes reinforce operational reliability. On power-up or after errant conditions such as signal glitches, the automatic reset circuitry asserts known states across memory controller and I²C logic, enabling consistent initialization sequences without manual intervention. During data transfer, the acknowledge mechanism guarantees transaction completeness before progressing, effectively mitigating risks of data corruption from incomplete writes or bus contention. In practice, systems employing these features maintain high data integrity even with unpredictable supply rails or noisy logic levels, observed in applications like automotive modules and industrial controllers.

A notable insight arises in the interplay between the acknowledge scheme and real-time error handling. Systems can leverage acknowledge responses to dynamically adapt transfer strategies, for instance by retrying failed communications or isolating failing nodes in a network. Furthermore, the deterministic behavior afforded by these mechanisms supports enhanced debugging and system validation processes, which often benefit from predictable fault isolation and repeatable error tracing. Collectively, these features embed a degree of resilience and configurability, setting a foundation for scalable deployment in interconnected architectures with stringent reliability demands.

Write and read methodologies

Write and read methodologies underpin robust memory subsystem performance, with data integrity and operational flexibility achieved through nuanced design features.

Fine-grained and large-scale updates are accommodated by dual write capabilities: single-byte writes serve precise modification of control registers, while 256-byte page writes maximize throughput in bulk data segments. This duality enables tailored transaction granularity, allowing configuration parameters and event records to coexist efficiently within a unified memory map. Engineering practice demonstrates that page-mode transfers dramatically reduce CPU intervention and bus contention during periodic logging, whereas byte-level access prevents unnecessary wear when updating infrequently changed flags.

The internal self-timed write cycle (≤10 ms) abstracts timing control from software layers, eliminating the need for explicit delay management in the host controller. This arrangement reduces instruction overhead and provides consistent write latency regardless of external timing variations. In deployment, this architectural feature streamlines protocol implementation, particularly in systems where real-time performance is sensitive to blocking I/O. Designers commonly exploit this self-timing by initiating back-to-back write sequences, knowing transactional boundaries are enforced autonomously by the device.

Polling for write-acknowledge further refines host-to-memory interface efficiency. By enabling status checking rather than relying on fixed wait intervals, bus cycles are reallocated dynamically, allowing for concurrent task scheduling and improved resource utilization. Embedded systems with critical timing often incorporate this polling mechanism into interrupt-driven service routines, minimizing idle periods and accelerating multi-threaded operations reliant on fast, reliable memory updates.

Hardware-selectable write protection introduces a secure barrier against unintended or malicious modification, an essential feature for applications operating in shared or field-deployed environments. When activated via external pin control, all write operations are instantly disabled, preserving the integrity of bootloaders, device calibration, and cryptographic keys. Field experience highlights that hardware-level protection is instrumental in ensuring recoverability, especially in systems subject to untrusted software updates or user interventions.

Taken together, these operation modes enable flexible adaptation across application spectrum—from infrequent firmware settings management to continuous sensor data capture. The layered organization of write strategies, automatic cycle completion, efficient acknowledgement, and selectable access restrictions forms the backbone of scalable, reliable nonvolatile memory systems in embedded engineering contexts. When integrated with careful mapping and workflow-aware command sequencing, the methodology described provides a blueprint for balancing reliability, responsiveness, and security in memory-centric designs.

Reliability and compliance standards

Reliability and compliance remain foundational when qualifying EEPROMs for critical applications. The AT24CM02-SSHM-B exemplifies such rigor with its robust feature set, which directly aligns with procurement and compliance benchmarks relevant to regulated industries. The endurance rating of one million write cycles signifies a mature silicon design, integrating advanced error correction and wear-leveling strategies at the cell and array levels. This durability enables deployment in environments subject to frequent data updates, such as system configuration storage or calibration data retention, with minimal risk of early silicon fatigue.

Extended temperature operation expands the device’s application envelope to industrial, automotive, and medical segments, where thermal extremes are routine. Such qualification requires meticulous process control during wafer fabrication and packaging, resulting in stable threshold voltages and leakage characteristics. Experience demonstrates that EEPROMs adhering to these standards withstand not only continuous rated operation but also repeated thermal cycling, directly reducing the incidence of field returns due to memory faults.

Lead-free, halide-free, and RoHS 3 compliance address the escalating regulatory constraints on hazardous substances within electronics. The absence of lead and halides in all device layers, coupled with adherence to RoHS 3, ensures compatibility with global environmental directives and simplifies integration into eco-sensitive supply chains. Meanwhile, a REACH-unaffected status signifies that the device's bill of materials and manufacturing processes do not incorporate listed substances of very high concern—a detail often scrutinized in audits for export or large-scale governmental projects.

Traceability and certification become straightforward in this context, as every aspect of the AT24CM02-SSHM-B's design and production supports documentation and compliance reporting. During practical qualification, consistent lot-to-lot reliability and unambiguous material declarations reduce the validation burden for system OEMs, allowing quick alignment with both end-customer and regulatory requirements. Leveraging such components accelerates hardware design cycles, minimizes qualification friction, and mitigates downstream risks—benefits proven repeatedly in high-reliability design programs. Selecting memory parts with these converging attributes positions a project for sustainability and regulatory success, a core consideration often overlooked in initial cost-driven component choices.

Potential equivalent/replacement models

Evaluating potential replacement models for the AT24CM02-SSHM-B centers on meticulous alignment of electrical, functional, and mechanical parameters. At the foundational level, direct memory cell architecture—be it EEPROM array granularity, page size, or addressing method—must correspond closely to ensure firmware transparency and seamless migration within established memory maps. Equally, I²C protocol adherence entails confirming identical signaling thresholds, bus arbitration behavior, and support for legacy timing modes or the fast-mode variants commonplace in modern embedded systems.

Pinout configuration warrants careful attention, as footprint deviations, even between ostensibly compatible SOIC or TSSOP packages, can introduce unforeseen routing changes or signal integrity concerns. Minor differences in write protection, hardware addressing capability, or deep power-down support may affect both board layout and system-level security. Supply voltage tolerance demands stricter verification, particularly for designs targeting wide operating ranges or battery-powered nodes; mismatches in Vcc minimums or maximums risk unstable operation or peripheral latch-up.

Endurance and data retention, while often specified in millions of write cycles and extended retention years, deserve practical scrutiny when data logging, frequent write-back caching, or security counters are implemented. Marginal disparities in endurance can manifest as field reliability issues, especially in mission-critical or compliance-driven applications. Regarding speed grade, actual bus throughput hinges not only on datasheet values but also on bus loading, signal rise-time, and clock stretching characteristics of the candidate device; thus, lab validation using realistic PCB loading and trace lengths underlies any transition strategy.

Frequently, well-known alternatives like the STMicroelectronics M24M02, ON Semiconductor CAT24C208, or Renesas ISL12057 serve as reference models. Despite catalogue alignment, nuanced divergences—such as default state of CE pins, factory-default write control, or even subtleties in software command sets—surface in system bring-up. Benchmarking should therefore encompass both static (electrical and mechanical) and dynamic (timing, reliability under edge-case supply conditions, error handling) aspects. In sourcing contexts amid supply chain fluctuations, engineering risk can be mitigated by maintaining multi-vendor BOM qualification, integrating verification scripts tuned for timing margin analysis.

Long-term robustness favors selection of devices with documented roadmaps, in-depth errata, and proven track records rather than relying solely on headline specifications. Introducing early test lots during prototype spin and regression testing across temperature corners enables detection of latent incompatibilities—reinforcing the premise that cross-vendor EEPROMs are rarely full drop-ins without engineering effort. Ultimately, equating replacement decisions with a blend of empirical evaluation, lifecycle assessment, and domain-specific feature mapping delivers enduring system-quality outcomes.

Conclusion

Microchip Technology’s AT24CM02-SSHM-B stands out within the high-density EEPROM category by extending addressable non-volatile memory to 2 Mbit while maintaining compatibility with the I²C interface. Core electrical characteristics, notably a supply voltage range spanning 1.7V to 5.5V, address both legacy and next-generation hardware constraints, reducing lateral engineering work during system upgrades or re-designs. The device’s robust ESD protection and enhanced endurance characteristics—often exceeding traditional performance thresholds for write cycles and data retention—mitigate risks tied to frequent reprogramming and harsh operational environments. This reliability proves crucial during prolonged stress testing, where stable data preservation is necessary throughout fluctuating voltage rails and temperature swings.

From an integration perspective, the compact SOIC-8 footprint, combined with exacting compliance to automotive AEC-Q100 standards, simplifies alternate sourcing and pin-for-pin replacement strategies. Embedded security and write protection features, including software locks and partial array protection, deliver granular control over memory partition access, supporting secure credential storage and authenticated firmware updating protocols in distributed networks.

In practice, the AT24CM02-SSHM-B’s capacity and I²C timing parameters present notable advantages during rapid prototyping of IoT sensor arrays, where high-density memory eliminates partitioning complexity and I²C multi-drop capability accelerates parallel device deployment. In harsh field applications, such as industrial control PLCs or telemetric automotive gateways, the EEPROM’s write endurance and retention specs enable low-maintenance, record-keeping designs that extend product service intervals and lower operational costs.

Optimal component selection emerges from cross-evaluation against competing products, focusing on not just memory size or electrical tolerances, but on secondary features like write protection granularity, address pointer flexibility, and support for wide voltage operation. This holistic approach ensures continuity in supply chains and scalability for future revisions. The AT24CM02-SSHM-B, with its broad interoperability and enhanced protection profile, continues to set benchmarks for versatility, future-proofing, and reliability across demanding embedded system applications.

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Catalog

1. Product overview: AT24CM02-SSHM-B in context2. Key features of the AT24CM02-SSHM-B3. Package, pinout, and device integration4. Electrical characteristics and operational parameters of AT24CM02-SSHM-B5. Operation and communication protocols6. Write and read methodologies7. Reliability and compliance standards8. Potential equivalent/replacement models9. Conclusion

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Frequently Asked Questions (FAQ)

What are the key design-in risks when using the AT24CM02-SSHM-B in a wide voltage range application from 1.7V to 5.5V, and how can I ensure reliable I2C communication across supply rails?

When integrating the AT24CM02-SSHM-B in systems with supply voltages ranging from 1.7V to 5.5V, a key risk is mismatched I2C signal levels—especially if the host controller operates at 3.3V while other bus devices are at 5V. Since the AT24CM02-SSHM-B is not level-tolerant beyond its supply voltage, exceeding VDD on SDA or SCL pins can cause leakage or latch-up. To mitigate, use unidirectional or bidirectional level shifters (e.g., PCA9306 or TXS0108E) when interfacing with higher-voltage I2C hosts. Additionally, at lower voltages (1.7V–2.5V), ensure strong pull-up resistors (adjust based on bus capacitance and 1 MHz max clock) to maintain signal integrity and avoid clock stretching issues during the 10ms write cycle.

How does the AT24CM02-SSHM-B compare to the 24LC256 in terms of page write limitations and endurance for frequent data logging applications?

The AT24CM02-SSHM-B offers 256-byte page writes and 100K write endurance per sector, compared to the 24LC256’s 64-byte page limit. This makes the AT24CM02-SSHM-B significantly more efficient for burst data logging, reducing I2C protocol overhead and minimizing bus occupation. However, both share similar endurance limits. For applications exceeding 100K cycles in the same memory region, consider wear-leveling algorithms or external monitoring to prevent premature failure. Use the AT24CM02-SSHM-B’s address polling feature to detect end-of-write cleanly and avoid polling delays that could affect system responsiveness.

Can the AT24CM02-SSHM-B safely replace the AT24C2562 in a drop-in upgrade scenario, and what are the critical differences to verify?

Replacing the AT24C2562 with the AT24CM02-SSHM-B requires caution—while both are 2Mbit I2C EEPROMs in 8-SOIC packages, the AT24CM02-SSHM-B lacks an address pin (A2) and uses a fixed device addressing scheme. The AT24C2562 supports up to eight devices on one bus via A2, A1, A0; the AT24CM02-SSHM-B only supports four via A1 and A0. Verify bus address conflicts before replacement. Additionally, confirm that 1 MHz clock support and 1.7V min supply are compatible with your controller, as older systems may be designed for 400 kHz and higher VDD. Layout and footprint are compatible, but firmware-level address mapping must be rechecked.

What reliability concerns should I consider when using the AT24CM02-SSHM-B in automotive or industrial environments near the 85°C operating limit?

Although the AT24CM02-SSHM-B is rated for -40°C to 85°C, sustained operation near 85°C accelerates wear mechanisms in EEPROM cells, especially with frequent writes. Data retention is specified for 100 years at 55°C but degrades exponentially at higher temperatures—expect ~10–20 years at 85°C. For automotive or industrial applications, avoid placing the device near heat sources and consider derating endurance limits by 50% in thermal environments above 70°C. Also, ensure clean power with bypass capacitors (0.1 µF ceramic) at VDD to prevent write corruption during supply transients, which are more common in noisy environments.

What are the practical limitations of achieving the 1 MHz I2C clock speed with the AT24CM02-SSHM-B, and how does bus capacitance affect real-world performance?

Achieving the full 1 MHz clock speed with the AT24CM02-SSHM-B requires careful attention to bus capacitance, which must be kept below 100 pF to ensure signal rise/fall times meet I2C fast-mode plus requirements. In dense PCBs or multi-device buses, stray capacitance can exceed this limit, causing data errors or clock stretching. Reduce pull-up resistor values (e.g., 1.5 kΩ for 3.3V) but balance against increased power dissipation. Use the AT24CM02-SSHM-B’s open-drain I2C interface with a dedicated buffer or I2C extender if long traces or multiple slaves are present. Always validate signal integrity on the target hardware with an oscilloscope before assuming 1 MHz operation is stable.

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