25LC160B-E/SN >
25LC160B-E/SN
Microchip Technology
IC EEPROM 16KBIT SPI 10MHZ 8SOIC
1937 Pcs New Original In Stock
EEPROM Memory IC 16Kbit SPI 10 MHz 8-SOIC
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25LC160B-E/SN Microchip Technology
5.0 / 5.0 - (237 Ratings)

25LC160B-E/SN

Product Overview

1232855

DiGi Electronics Part Number

25LC160B-E/SN-DG
25LC160B-E/SN

Description

IC EEPROM 16KBIT SPI 10MHZ 8SOIC

Inventory

1937 Pcs New Original In Stock
EEPROM Memory IC 16Kbit SPI 10 MHz 8-SOIC
Memory
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Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.8319 0.8319
  • 200 0.3226 64.5200
  • 500 0.3111 155.5500
  • 1000 0.3053 305.3000
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25LC160B-E/SN Technical Specifications

Category Memory, Memory

Manufacturer Microchip Technology

Packaging Tube

Series -

Product Status Active

DiGi-Electronics Programmable Verified

Memory Type Non-Volatile

Memory Format EEPROM

Technology EEPROM

Memory Size 16Kbit

Memory Organization 2K x 8

Memory Interface SPI

Clock Frequency 10 MHz

Write Cycle Time - Word, Page 5ms

Voltage - Supply 2.5V ~ 5.5V

Operating Temperature -40°C ~ 125°C (TA)

Mounting Type Surface Mount

Package / Case 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package 8-SOIC

Base Product Number 25LC160

Datasheet & Documents

HTML Datasheet

25LC160B-E/SN-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051

Additional Information

Other Names
25LC160B-E/SN-NDR
Standard Package
100

Alternative Parts

View Details
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QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
BR25L160FJ-WE2
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3757
BR25L160FJ-WE2-DG
0.3443
MFR Recommended
M95160-WMN6
STMicroelectronics
1444
M95160-WMN6-DG
0.3046
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BR25H160F-2CE2
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767
BR25H160F-2CE2-DG
0.1568
MFR Recommended
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STMicroelectronics
18411
M95160-RMN6TP-DG
0.0026
MFR Recommended
BR25160N-10SU-2.7
Rohm Semiconductor
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5.0/5.0-(Show up to 5 Ratings)
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Dec 02, 2025
5.0
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Dec 02, 2025
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They consistently provide quick and reliable support after sales, which we greatly appreciate.
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Frequently Asked Questions (FAQ)

Can the 25LC160B-E/SN be safely used in a 3.3V automotive control module where voltage transients may briefly exceed 4.0V, and what protection measures should I consider during PCB layout?

The 25LC160B-E/SN supports a supply range of 2.5V to 5.5V, so brief transients above 4.0V are within tolerance as long as they stay below 5.5V and comply with the absolute maximum ratings. However, in automotive environments with load dump or inductive spikes, you should implement a TVS diode on the VCC line and include a 100nF ceramic decoupling capacitor placed within 5mm of the IC to suppress high-frequency noise. Avoid routing SPI lines near high-current traces to prevent coupling-induced errors during write cycles.

I'm replacing a failing M95160-WMN6TP in an industrial sensor node—can I drop in the 25LC160B-E/SN without firmware changes, and are there any timing or command set differences I should verify?

The 25LC160B-E/SN is functionally compatible with the M95160-WMN6TP for basic read/write operations, but you must verify two critical differences: first, the Microchip part has a maximum clock frequency of 10 MHz (vs. 10.5 MHz for ST’s M95160), which is unlikely to affect most designs but could matter in high-speed daisy-chained SPI systems. Second, ensure your firmware doesn’t rely on ST-specific deep power-down modes, as the 25LC160B-E/SN uses a simpler hold#/WP# scheme. Always validate write-cycle completion timing—both parts use ~5ms page writes—but polling the status register is recommended over fixed delays.

Is the 25LC160B-E/SN suitable for high-write-cycle applications like logging sensor data every 10 seconds over a 10-year lifespan, and how does its endurance compare to flash-based alternatives?

With a rated endurance of 1 million write cycles per memory location, the 25LC160B-E/SN can handle logging every 10 seconds for over 3 years per byte—but for a 10-year lifespan, you must implement wear leveling across the full 2K x 8 array. Without it, localized wear will cause premature failure. Compared to SPI NOR flash (e.g., Winbond W25Q80), EEPROMs like the 25LC160B-E/SN offer byte-level erase/write without block management, simplifying firmware, but at higher cost per bit. For long-term logging, consider allocating a circular buffer across multiple addresses and tracking write pointers in a reserved sector.

My design operates at -30°C in a sealed enclosure with no airflow—will the 25LC160B-E/SN’s -40°C to 125°C rating guarantee reliable SPI communication, or do I need to derate timing parameters?

While the 25LC160B-E/SN is rated for -40°C to 125°C, SPI timing margins shrink at temperature extremes due to increased propagation delays and oscillator drift. At -30°C, ensure your microcontroller’s SPI clock meets the 25LC160B-E/SN’s t_SU (setup) and t_HO (hold) times with margin—consider reducing clock speed to 5 MHz if your system uses internal RC oscillators. Also, verify that pull-up resistors on MISO/MOSI (typically 10kΩ) are stable over temperature, as cold increases resistance in some resistor types, potentially violating VIH levels.

Can I parallel two 25LC160B-E/SN devices on the same SPI bus to double memory capacity, and what hardware or firmware changes are needed to avoid conflicts?

Yes, you can connect multiple 25LC160B-E/SN devices on a shared SPI bus, but each must have a unique chip select (CS#) line controlled by your MCU. Do not tie CS# pins together—this will cause bus contention on MISO. Since all devices share SCK, MOSI, and MISO, ensure only one CS# is active at a time. Firmware must manage addressing across both chips (e.g., treating addresses 0x0000–0x07FF on the first and 0x0800–0x0FFF on the second), and account for simultaneous write-in-progress (WIP) flags. Also, add series termination resistors (22–33Ω) near each IC’s MOSI/SCK pins if trace lengths exceed 10 cm to reduce reflections.

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