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25AA02E64T-I/SN
Microchip Technology
IC EEPROM 2KBIT SPI 10MHZ 8SOIC
22476 Pcs New Original In Stock
EEPROM Memory IC 2Kbit SPI 10 MHz 8-SOIC
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5.0 / 5.0
- (61 Ratings)
25AA02E64T-I/SN
Product Overview
1233630
DiGi Electronics Part Number
25AA02E64T-I/SN-DGManufacturer
Microchip Technology
25AA02E64T-I/SN
Description
IC EEPROM 2KBIT SPI 10MHZ 8SOICInventory
22476 Pcs New Original In Stock
EEPROM Memory IC 2Kbit SPI 10 MHz 8-SOIC
Quantity
Minimum 1
Minimum 1
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25AA02E64T-I/SN Technical Specifications
Category
Memory, Memory
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
DiGi-Electronics Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
EEPROM
Technology
EEPROM
Memory Size
2Kbit
Memory Organization
256 x 8
Memory Interface
SPI
Clock Frequency
10 MHz
Write Cycle Time - Word, Page
5ms
Voltage - Supply
1.8V ~ 5.5V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
25AA02E64
Datasheet & Documents
HTML Datasheet
25AA02E64T-I/SN-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.32.0051
Additional Information
Standard Package
3,300
Alternative Parts
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QUANTITY AVAILABLE
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UNIT PRICE
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Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
價格實惠，服務迅速且專業，使我每次都很滿意。
Dec 02, 2025
公司的售後服務無微不至，遇到問題時依然耐心解答，非常專業！
Dec 02, 2025
Je suis impressionné par la facilité de navigation sur leur plateforme. Leur approche économique nous permet de maintenir nos coûts sous contrôle.
Dec 02, 2025
環境配慮と価格の両方を実現している点が素晴らしいです。
Dec 02, 2025
Affordable prices from DiGi Electronics make it possible for me to experiment with new tech toys.
Dec 02, 2025
Shopping at DiGi Electronics is always a positive experience, thanks to their attentive service.
Dec 02, 2025
Timely and well-managed logistics are one of their key strengths.
Dec 02, 2025
DiGi Electronics combines affordability with excellent customer support.
Dec 02, 2025
DiGi Electronics' products have proven to be both reliable and long-lasting.
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Frequently Asked Questions (FAQ)
When designing a battery-powered IoT device, what are the primary risks of using the Microchip 25AA02E64T-I/SN EEPROM for critical configuration data if the supply voltage drops below 1.8V?
While the Microchip 25AA02E64T-I/SN is rated for 1.8V to 5.5V, operating at the absolute lower bound (1.8V) introduces a risk of data corruption during write operations if the voltage fluctuates or dips further. To mitigate this, implement robust power-on reset (POR) and brown-out detection (BOD) circuits. Ensure that write operations are only initiated when a stable voltage well above 1.8V is confirmed and include checksums or CRC checks in your firmware to validate data integrity after power loss and subsequent reads of the 25AA02E64T-I/SN.
For a high-volume consumer electronics product where cost is paramount, how does the Microchip 25AA02E64T-I/SN compare in terms of integration complexity and potential long-term reliability against a competitor like the STMicroelectronics M95020-WMN6TP?
Both the Microchip 25AA02E64T-I/SN and the M95020-WMN6TP are 2Kbit SPI EEPROMs in SOIC packages, offering similar functionality. The primary difference lies in potential manufacturing process variations and specific endurance ratings, though both are generally robust. For integration, the SPI interface of the 25AA02E64T-I/SN is standard. Consider the vendor's support ecosystem, documentation clarity, and long-term availability guarantees. For high-volume applications, always procure samples and conduct extensive lifecycle testing of the 25AA02E64T-I/SN to confirm its suitability and compare actual board-level failure rates with any shortlisted alternatives.
In a system requiring frequent small data updates, what are the practical implications of the Microchip 25AA02E64T-I/SN's 5ms write cycle time, and how can this impact overall system performance and wear?
The 5ms write cycle time for the 25AA02E64T-I/SN means that each byte or page write will take at least this long to complete. If your application requires thousands of small writes per second, this latency can become a significant bottleneck. To manage this, batch your writes whenever possible, buffering data in RAM and performing larger, less frequent writes to the 25AA02E64T-I/SN. Also, consider implementing a polling mechanism to confirm write completion rather than blocking your main processor, and be mindful of the total endurance cycles (though typically high for EEPROM) if very aggressive write patterns are unavoidable. Ensure your firmware doesn't starve other critical tasks waiting for EEPROM writes.
When replacing an older design that used a Microchip 25AA02E48T-I/SN, what are the critical considerations for migrating to the 25AA02E64T-I/SN, specifically concerning pin compatibility and subtle functional differences?
The 25AA02E48T-I/SN and 25AA02E64T-I/SN are both 2Kbit SPI EEPROMs from Microchip, and importantly, they share the same 8-SOIC pinout and fundamental SPI command set. The 25AA02E64T-I/SN is a newer generation, often with improvements in speed or internal architecture, but the core functionality for basic read/write operations remains consistent. The primary consideration for migration is ensuring your firmware's SPI timing parameters are compatible with the 10MHz clock of the 25AA02E64T-I/SN, which is likely faster than the older part. Always verify data sheet specifications for both devices regarding maximum clock speeds, write times, and voltage ranges to confirm a seamless transition for your 25AA02E64T-I/SN integration.
Under extreme environmental conditions (e.g., automotive cabin temperature fluctuations), what potential reliability issues could arise with the Microchip 25AA02E64T-I/SN, and how can we best test for them before final product release?
The Microchip 25AA02E64T-I/SN is rated for -40°C to 85°C. While this range covers many typical industrial and moderate automotive applications, prolonged exposure to the upper end of this range, especially combined with high humidity or vibration, can accelerate component aging and potentially lead to read/write errors or data retention issues over time. To ensure reliability for demanding environments, Subject a significant number of 25AA02E64T-I/SN parts to accelerated life testing in a thermal chamber, cycling between the extreme temperature limits while performing continuous read/write operations. Additionally, perform data retention tests at elevated temperatures for extended periods. This proactive testing will help identify any potential weaknesses in the 25AA02E64T-I/SN that might not be apparent under nominal operating conditions.
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25AA02E64T-I/SN CAD Models
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