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MA4P7455-287T
MACOM Technology Solutions
DIODE,PIN,PLASTIC,LEADFREE
13257 Pcs New Original In Stock
RF Diode PIN - Single 100V 150 mA 250 mW SOT-23
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5.0 / 5.0
- (341 Ratings)
MA4P7455-287T
Product Overview
9345791
DiGi Electronics Part Number
MA4P7455-287T-DGManufacturer
MACOM Technology Solutions
MA4P7455-287T
Description
DIODE,PIN,PLASTIC,LEADFREEInventory
13257 Pcs New Original In Stock
RF Diode PIN - Single 100V 150 mA 250 mW SOT-23
Quantity
Minimum 1
Minimum 1
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MA4P7455-287T Technical Specifications
Category
Diodes, RF Diodes
Packaging
Tape & Reel (TR)
Series
SMPP
Product Status
Active
Diode Type
PIN - Single
Voltage - Peak Reverse (Max)
100V
Current - Max
150 mA
Capacitance @ Vr, F
0.35pF @ 50V, 1MHz
Resistance @ If, F
3Ohm @ 10mA, 100MHz
Power Dissipation (Max)
250 mW
Operating Temperature
175°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Base Product Number
MA4P7455
Datasheet & Documents
HTML Datasheet
MA4P7455-287T-DG
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0060
Additional Information
Other Names
1465-MA4P7455-287TCT
1465-MA4P7455-287TDKR
1465-MA4P7455-287T-DG
1465-MA4P7455-287TTR
Standard Package
3,000
Alternative Parts
PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
MADP-007448-0287AT
MACOM Technology Solutions
3904
MADP-007448-0287AT-DG
0.2683
Parametric Equivalent
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
DiGi Electronics maintains high standards in inventory accuracy and availability.
Dec 02, 2025
Price clarity at DiGi Electronics is outstanding, giving me confidence in my purchasing decisions every time.
Dec 02, 2025
Inventory updates are accurate and frequent, helping me stay informed about product availability.
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Frequently Asked Questions (FAQ)
Can the MA4P7455-287T be safely used as a drop-in replacement for the Skyworks SMP1345-079LF in a 5G mmWave RF switch matrix operating at 28 GHz, and what layout or biasing adjustments are needed to avoid signal degradation?
The MA4P7455-287T is not a direct electrical match for the SMP1345-079LF despite both being SOT-23 packaged PIN diodes. While the MA4P7455-287T has lower capacitance (0.35pF vs. ~0.25pF for SMP1345-079LF), its higher series resistance (3Ω vs. ~1.5Ω) at 100MHz will degrade insertion loss and isolation at 28 GHz. Additionally, the MA4P7455-287T’s 100V breakdown is lower than the SMP1345’s 150V, increasing risk under high-power transient conditions. If substitution is unavoidable, reduce bias current to minimize resistive losses, use grounded coplanar waveguide routing, and validate performance with network analyzer testing—preferably on a prototype PCB with impedance-controlled traces.
What are the key reliability risks when using the MA4P7455-287T in a high-temperature automotive radar module operating near its 175°C Tj limit, and how can thermal management mitigate early failure?
Operating the MA4P7455-287T near its 175°C junction temperature significantly accelerates electromigration and dopant diffusion in the PIN structure, leading to increased forward voltage drop and capacitance drift over time. In automotive radar applications (e.g., 77 GHz), this can cause gain instability and false triggering. To mitigate risk, maintain case temperature below 125°C using thermal vias under the SOT-23 pad, limit duty cycle to <30% in pulsed modes, and avoid sustained forward currents above 100 mA. Implement periodic calibration routines in firmware to compensate for parametric drift, and consider derating power dissipation to ≤150 mW for long-term reliability.
How does the MA4P7455-287T compare to the Infineon BAR63-03W in terms of switching speed and harmonic distortion for use in a software-defined radio (SDR) front-end with fast T/R switching under 100 ns?
The MA4P7455-287T has superior switching speed compared to the BAR63-03W due to its optimized PIN structure and lower carrier lifetime, enabling transition times under 50 ns when properly biased. However, the BAR63-03W offers better linearity (lower harmonic distortion) at high RF power levels (>20 dBm) because of its higher breakdown voltage (150V vs. 100V). For SDR applications requiring <100 ns switching, the MA4P7455-287T is preferable, but you must ensure reverse bias voltage never exceeds 100V and limit RF input power to <18 dBm to avoid nonlinear behavior. Use a fast-recovery driver circuit with active pull-down to accelerate turn-off and minimize charge storage effects.
Is the MA4P7455-287T suitable for high-density phased array antenna designs where multiple diodes are placed within λ/4 spacing, and what parasitic coupling issues should be anticipated?
Yes, the MA4P7455-287T’s small SOT-23 footprint and low parasitic inductance (~0.5 nH) make it viable for dense phased arrays, but mutual coupling between adjacent diodes can cause unintended resonance and beam squint. At 24–40 GHz, even 0.35pF capacitance can interact with trace inductance to form parasitic LC tanks. Mitigate this by orienting diodes perpendicular to each other, using grounded guard traces between devices, and embedding them in a grounded cavity or via fence. Perform 3D EM simulation (e.g., HFSS or CST) to model coupling effects, and avoid placing diodes closer than 1.5× package width unless shielded. Also, ensure uniform DC bias distribution to prevent current crowding.
What design precautions are necessary when replacing a failed MA4P7455-287T in a field-deployed RF attenuator circuit without access to full test equipment, to avoid cascading failures?
When replacing the MA4P7455-287T in the field, first verify that the failure wasn’t caused by overvoltage or ESD—common root causes in attenuator circuits. Check surrounding components (bias resistors, coupling caps) for signs of overstress. Use only lead-free, MSL-1 compatible replacements stored in dry conditions to prevent moisture-induced cracking during reflow. Ensure the replacement diode is oriented correctly (anode/cathode per original layout) and avoid excessive soldering heat (>260°C for >10 sec). After replacement, perform a basic forward voltage check (~0.7–0.9V at 10mA) with a multimeter to confirm functionality. Do not operate above 80% of rated current (120 mA) until full system validation is possible, and monitor for thermal runaway under continuous RF drive.
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DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
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