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MA4E20541-1279T
MACOM Technology Solutions
SCHOTTKY LEAD-FREE PLASTIC
495155 Pcs New Original In Stock
RF Diode Schottky - Single 3V 20 mA 75 mW SC-79
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MA4E20541-1279T MACOM Technology Solutions
5.0 / 5.0 - (193 Ratings)

MA4E20541-1279T

Product Overview

9345800

DiGi Electronics Part Number

MA4E20541-1279T-DG
MA4E20541-1279T

Description

SCHOTTKY LEAD-FREE PLASTIC

Inventory

495155 Pcs New Original In Stock
RF Diode Schottky - Single 3V 20 mA 75 mW SC-79
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 3000 0.6648 1994.5140
  • 6000 0.6541 3924.8196
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MA4E20541-1279T Technical Specifications

Category Diodes, RF Diodes

Packaging Tape & Reel (TR)

Series MA4E2054

Product Status Active

Diode Type Schottky - Single

Voltage - Peak Reverse (Max) 3V

Current - Max 20 mA

Capacitance @ Vr, F 0.3pF @ 0V, 1MHz

Resistance @ If, F -

Power Dissipation (Max) 75 mW

Operating Temperature -65°C ~ 125°C

Package / Case SC-79, SOD-523

Supplier Device Package SC-79

Base Product Number MA4E20541

Datasheet & Documents

HTML Datasheet

MA4E20541-1279T-DG

Environmental & Export Classification

Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080

Additional Information

Other Names
1465-MA4E20541-1279TDKR
1465-MA4E20541-1279TTR
1465-MA4E20541-1279TCT
1465-MA4E20541-1279T-DG
Standard Package
3,000

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
HSMS-2865-TR1G
Broadcom Limited
3125
HSMS-2865-TR1G-DG
0.6541
MFR Recommended
HSMS-2865-BLKG
Broadcom Limited
2107
HSMS-2865-BLKG-DG
0.6541
MFR Recommended
HSMS-286K-BLKG
Broadcom Limited
2293
HSMS-286K-BLKG-DG
0.6541
MFR Recommended
HSMS-286P-BLKG
Broadcom Limited
2038
HSMS-286P-BLKG-DG
0.6541
MFR Recommended
HSMS-286R-BLKG
Broadcom Limited
981
HSMS-286R-BLKG-DG
0.6541
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
Brigh***tures
Dec 02, 2025
5.0
I've recommended DiGi Electronics to friends because of their consistent reliability and budget-friendly prices.
Op***ky
Dec 02, 2025
5.0
DiGi Electronics’ logistics operations are some of the best I've experienced in the industry.
Celesti***erulean
Dec 02, 2025
5.0
I will continue to purchase from DiGi Electronics knowing I am supported well.
Twin***Tales
Dec 02, 2025
5.0
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Ope***ies
Dec 02, 2025
5.0
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Frequently Asked Questions (FAQ)

When designing the MA4E20541-1279T into a low-power RF signal detection circuit, how can I ensure it won't fail prematurely due to reverse voltage stress in transient conditions?

The MA4E20541-1279T has a very low peak reverse voltage rating of 3V, making it susceptible to damage during voltage transients or ESD events common in real-world RF environments. To mitigate risk, always include transient voltage suppression such as a small-footprint TVS diode rated for RF lines, or use AC-coupling with proper DC biasing to ensure the reverse voltage never exceeds 3V. Additionally, verify your PCB layout avoids long traces that could couple in fast spikes, especially in handheld or battery-powered devices where grounding is constrained. Designing with this margin protects long-term reliability, as sustained overvoltage—even within datasheet derating—can degrade Schottky junctions over time.

Is the MA4E20541-1279T suitable for replacing the Skyworks SMS7621 in a high-sensitivity mixer application, and what are the key performance trade-offs?

The MA4E20541-1279T can serve as a functional drop-in alternative to the SMS7621 in low-current mixing applications, but with important trade-offs. While both are low-barrier Schottky diodes in SOD-523 packages, the MA4E20541-1279T has a lower max forward current (20 mA vs. 50 mA for SMS7621) and slightly higher junction capacitance (0.3pF vs. 0.25pF @ 0V), potentially limiting dynamic range and conversion efficiency at higher RF input levels. However, the MA4E20541-1279T offers excellent consistency across temperature and is available in large quantities, making it a reliable choice for cost-sensitive, low-power designs where signal levels are tightly controlled. Always verify mixer conversion loss and noise figure with the MA4E20541-1279T under actual LO drive levels (typically 0–7 dBm) before finalizing the design.

How does the low power dissipation rating of the MA4E20541-1279T impact thermal reliability in continuous-conduction applications?

The MA4E20541-1279T has a maximum power dissipation of only 75 mW, which limits its use in continuous forward-biased operation. Even at 20 mA forward current, any forward voltage drop above 3.75V (unlikely, but possible under non-ideal bias) would exceed this limit. In practice, the forward voltage is ~0.3V, so power dissipation is typically below 6 mW, making thermal failure unlikely under normal use. However, integration into circuits with poor PCB thermal conductivity (e.g., single-layer boards) or enclosed environments near heat sources (like power amplifiers) may reduce effective heat dissipation, increasing junction temperature and accelerating aging. Always perform thermal validation and maintain a safe margin, especially in industrial environments near the 125°C ambient upper limit.

Can the MA4E20541-1279T be used in series or parallel configurations to increase voltage or current handling, and what are the risks?

Using the MA4E20541-1279T in series to increase reverse voltage capability is not recommended due to mismatched junction characteristics and leakage currents, which can lead to uneven voltage sharing and overvoltage failure in one diode. Similarly, paralleling to increase current beyond 20 mA introduces risk due to thermal imbalance—since Schottky diodes have a negative temperature coefficient, one diode may hog current and fail. For signal-level applications—which the MA4E20541-1279T is designed for—these workarounds are unnecessary and reduce reliability. Instead, select a higher-rated diode like the MA4E20801 if higher voltage or current is required. Stick to single-diode use to maintain performance consistency and avoid field failure risks.

What are the critical PCB layout and assembly considerations when integrating the MA4E20541-1279T in high-frequency detector circuits?

When integrating the MA4E20541-1279T into RF detector or switching circuits above 1 GHz, minimize parasitic inductance and capacitance by using short, direct traces and avoiding vias near the device. The SC-79 (SOD-523) package has minimal lead inductance, but poor layout can negate its 0.3pF capacitance advantage. Use ground planes with cutouts under the pads to reduce parasitic capacitance, and ensure symmetric pad design for thermal and electrical balance during reflow. Since the MA4E20541-1279T is MSL1, no baking is required, but follow JEDEC-recommended reflow profiles to prevent thermal shock. Also, avoid hand-soldering due to thermal sensitivity—use automated assembly to ensure consistent, reliable solder joints and prevent latent defects in field operation.

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