MA4E1340A1-287T >
MA4E1340A1-287T
MACOM Technology Solutions
SCHOTTKY PLASTIC LEAD-FREE
3181 Pcs New Original In Stock
RF Diode Schottky - Single 70V 200 mA 250 mW SOT-23
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MA4E1340A1-287T MACOM Technology Solutions
5.0 / 5.0 - (44 Ratings)

MA4E1340A1-287T

Product Overview

9346091

DiGi Electronics Part Number

MA4E1340A1-287T-DG
MA4E1340A1-287T

Description

SCHOTTKY PLASTIC LEAD-FREE

Inventory

3181 Pcs New Original In Stock
RF Diode Schottky - Single 70V 200 mA 250 mW SOT-23
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.7291 0.7291
  • 200 0.2917 58.3400
  • 500 0.2817 140.8500
  • 1000 0.2774 277.4000
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MA4E1340A1-287T Technical Specifications

Category Diodes, RF Diodes

Packaging Tape & Reel (TR)

Series MA4E1340

Product Status Active

Diode Type Schottky - Single

Voltage - Peak Reverse (Max) 70V

Current - Max 200 mA

Capacitance @ Vr, F 2pF @ 0V, 1MHz

Resistance @ If, F -

Power Dissipation (Max) 250 mW

Operating Temperature -55°C ~ 125°C (TJ)

Package / Case TO-236-3, SC-59, SOT-23-3

Supplier Device Package SOT-23

Base Product Number MA4E1340

Datasheet & Documents

HTML Datasheet

MA4E1340A1-287T-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070

Additional Information

Other Names
1465-MA4E1340A1-287T-DG
1465-MA4E1340A1-287TTR
1465-MA4E1340A1-287TCT
1465-MA4E1340A1-287TDKR
Standard Package
3,000

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
BAS70,235
Nexperia USA Inc.
10120
BAS70,235-DG
0.2774
Similar
BAS 70 B5003
Infineon Technologies
975
BAS 70 B5003-DG
0.2774
MFR Recommended
HSMS-2804-TR1G
Broadcom Limited
15804
HSMS-2804-TR1G-DG
0.2774
MFR Recommended
HSMS-2800-TR1G
Broadcom Limited
305296
HSMS-2800-TR1G-DG
0.2774
Direct

Reviews

5.0/5.0-(Show up to 5 Ratings)
달***루
Dec 02, 2025
5.0
구매 후 지원 서비스가 훌륭해서, 문제없이 모든 것이 해결됐어요.
Lebe***elle
Dec 02, 2025
5.0
Dank der Website kann ich meine Electronics-Bedürfnisse bequem von zu Hause aus decken.
Peace***Haven
Dec 02, 2025
5.0
Overall, the combination of high-quality packaging and efficient tracking made my purchase unforgettable.
Bri***Beat
Dec 02, 2025
5.0
They demonstrated reliability and professionalism in both logistics and after-sales support.
Mist***rning
Dec 02, 2025
5.0
Their dedication to quality and customer care makes them stand out in the industry.
Sou***ark
Dec 02, 2025
5.0
The entire process from order to delivery was smooth and hassle-free.
Qui***ind
Dec 02, 2025
5.0
DiGi Electronics consistently offers value-packed deals that fit my financial plan.
Peac***lPace
Dec 02, 2025
5.0
I’ve been impressed with their packing safety standards and the affordability of their products, which meet all my needs.
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Frequently Asked Questions (FAQ)

How does the MA4E1340A1-287T perform in high-frequency RF detector circuits when compared to the Skyworks SMS7630 in terms of temperature stability and leakage current?

The MA4E1340A1-287T exhibits lower temperature-dependent leakage current than the SMS7630, making it more stable across extreme operating temperatures from -55°C to 125°C. While both diodes offer low barrier Schottky performance for RF detection, the MA4E1340A1-287T maintains consistent sensitivity in harsh environments due to MACOM's optimized passivation process. Designers should consider this advantage in outdoor or automotive applications where thermal cycling occurs, potentially reducing calibration frequency and improving long-term reliability.

Can the MA4E1340A1-287T safely replace the Avago HSM282x series in zero-bias detector applications without sacrificing sensitivity at 2.4 GHz?

Yes, the MA4E1340A1-287T is well-suited for zero-bias RF detection at 2.4 GHz and offers comparable responsivity to the Avago HSM282x series, with the added benefit of a higher peak reverse voltage (70V vs. 50V), improving robustness against transient overvoltage events. However, ensure input matching networks are re-optimized due to slight differences in junction capacitance (2pF @ 0V) and series resistance. Use a small-signal model in simulation to verify sensitivity performance, especially in low-power IoT or WLAN signal sensing circuits.

What layout and thermal considerations are required for the MA4E1340A1-287T in a densely packed SOT-23 design operating near maximum power dissipation?

When operating the MA4E1340A1-287T near its 250 mW power dissipation limit in compact layouts, ensure at least two vias under the ground-connected pad for thermal shunting and minimize copper run lengths to reduce thermal resistance. Avoid placing adjacent heat-generating components within 2 mm. Given the SOT-23-3 package's limited thermal mass, derate maximum current by 30% in enclosed spaces without airflow. Simulating board-level thermal performance using JEDEC JESD51 standards is advised for mission-critical designs.

Is the MA4E1340A1-287T susceptible to ESD damage during handling, and what protection measures should be implemented in automated assembly?

Yes, the MA4E1340A1-287T is susceptible to ESD due to its Schottky junction characteristics, despite its robust 70V reverse rating. As a MSL-3 device, it requires strict ESD controls during automated pick-and-place operations. Implement ionizers, grounded tooling, and humidity-controlled environments. Avoid using socketed test fixtures without transient protection, and consider transient voltage suppression (TVS) clamping on exposed RF lines in field-deployable units to prevent latent junction degradation from repeated low-energy ESD events.

How does the 2pF junction capacitance of the MA4E1340A1-287T impact impedance matching in UHF envelope detection, and what compensation techniques are recommended?

The 2pF junction capacitance of the MA4E1340A1-287T significantly affects impedance matching above 300 MHz, requiring careful tuning of shunt and series components in UHF envelope detectors. At 900 MHz, this capacitance presents ~88 ohms reactance, which can detune standard 50-ohm networks. Use high-Q inductors in series LC matching or embed the diode within a capacitive voltage divider topology to resonate out the Cj effect. Simulate with parasitics included and validate with a vector network analyzer (VNA) to ensure optimal power transfer and detection linearity.

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