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IS62WV51216HBLL-45TLI-TR
ISSI, Integrated Silicon Solution Inc
8Mb, Low Power/Power Saver,Async
23127 Pcs New Original In Stock
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 44-TSOP II
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5.0 / 5.0
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IS62WV51216HBLL-45TLI-TR
Product Overview
11122415
DiGi Electronics Part Number
IS62WV51216HBLL-45TLI-TR-DGManufacturer
ISSI, Integrated Silicon Solution Inc
IS62WV51216HBLL-45TLI-TR
Description
8Mb, Low Power/Power Saver,AsyncInventory
23127 Pcs New Original In Stock
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 44-TSOP II
Quantity
Minimum 1
Minimum 1
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IS62WV51216HBLL-45TLI-TR Technical Specifications
Category
Memory, Memory
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Asynchronous
Memory Size
8Mbit
Memory Organization
512K x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
45ns
Access Time
45 ns
Voltage - Supply
2.2V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
44-TSOP (0.400", 10.16mm Width)
Supplier Device Package
44-TSOP II
Datasheet & Documents
HTML Datasheet
IS62WV51216HBLL-45TLI-TR-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Additional Information
Other Names
706-IS62WV51216HBLL-45TLI-TR
Standard Package
1,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
I appreciate the premium quality of DiGi Electronics' offerings and their reasonable prices.
Dec 02, 2025
I've had very good experiences with their after-sales service, which is reliable and helpful.
Dec 02, 2025
Their products offer reliability and high standards at accessible prices.
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Frequently Asked Questions (FAQ)
Can the IS62WV51216HBLL-45TLI-TR be safely used in a 3.3V industrial control system with occasional voltage dips down to 2.5V, and what are the risks if the supply falls below 2.2V?
The IS62WV51216HBLL-45TLI-TR is specified for operation between 2.2V and 3.6V, so brief dips to 2.5V are generally acceptable. However, sustained operation or frequent excursions below 2.2V risk data corruption, increased access time variability, and potential failure to meet timing specs. To mitigate risk, implement a brown-out detection circuit or use a supervisor IC to hold the system in reset during undervoltage events, ensuring the SRAM isn’t accessed outside its valid range.
What are the key reliability concerns when replacing a Cypress CY7C1356C-100AXI with the IS62WV51216HBLL-45TLI-TR in a high-temperature automotive under-hood application?
While both parts are 8Mb asynchronous SRAMs in TSOP-II packages, the IS62WV51216HBLL-45TLI-TR has a commercial-grade temperature rating (-40°C to +85°C), whereas the Cypress part is rated for -40°C to +125°C. Using the IS62WV51216HBLL-45TLI-TR in an under-hood environment where ambient temperatures can exceed 105°C may push the junction temperature beyond safe limits, accelerating wear and increasing soft error rates. For automotive use, consider a qualified AEC-Q100 alternative or add thermal management to keep the device within its rated range.
How does the IS62WV51216HBLL-45TLI-TR’s power-saving mode compare to the standby current of a Micron MT45W4MW16BGX-701IT in battery-powered IoT edge nodes, and when should I avoid using it?
The IS62WV51216HBLL-45TLI-TR offers a low-power/saver mode with significantly reduced standby current compared to standard SRAMs, but it typically draws more quiescent current than the Micron MT45W4MW16BGX-701IT, which is optimized for ultra-low leakage. In always-on IoT sensors with multi-year battery life targets, the Micron part may be preferable. However, the IS62WV51216HBLL-45TLI-TR provides better cost-performance balance for moderate-duty cycles; avoid it only in extreme low-power scenarios where nanoamp-level sleep currents are mandatory.
Is the IS62WV51216HBLL-45TLI-TR suitable for direct replacement of a Samsung K6T4016V1D-TC70 in a legacy telecom line card without PCB modifications?
Pin-for-pin compatibility is likely since both are 44-TSOP II 8Mb (512K x 16) asynchronous SRAMs with similar timing (45ns vs 70ns access time), but the IS62WV51216HBLL-45TLI-TR is faster and operates at a wider voltage range (2.2–3.6V vs typically 3.0–3.6V for the Samsung part). This makes it electrically compatible in most 3.3V systems. However, verify signal integrity—especially on address/data lines—due to faster edge rates, and confirm that the system’s WE/OE control logic can handle the tighter timing margins. No PCB changes are usually needed, but validate timing closure in your specific design.
What layout and decoupling practices are critical to prevent data errors when using the IS62WV51216HBLL-45TLI-TR in a high-noise motor drive environment?
In electrically noisy environments like motor drives, poor layout can induce glitches that corrupt SRAM data even if voltage and timing are within spec. Place 0.1µF ceramic decoupling capacitors as close as possible to each VCC pin of the IS62WV51216HBLL-45TLI-TR, and use a solid ground plane beneath the device. Route address, data, and control signals away from high-current traces, and consider series termination resistors (22–33Ω) on critical lines to reduce ringing. Additionally, avoid placing the SRAM near inductive loads or switching nodes to minimize magnetic coupling—these steps are essential to maintain data integrity despite the part’s lack of ECC.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
IS62WV51216HBLL-45TLI-TR CAD Models
ISSI, Integrated Silicon Solution Inc IS62WV51216HBLL-45TLI-TR PCB symbols & footprints
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