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ICE15N60
IceMOS Technology
Superjunction MOSFET
1282 Pcs New Original In Stock
N-Channel 600 V 15A (Tc) 156W (Tc) Through Hole TO-220
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5.0 / 5.0
- (233 Ratings)
ICE15N60
Product Overview
13001714
DiGi Electronics Part Number
ICE15N60-DGManufacturer
IceMOS Technology
ICE15N60
Description
Superjunction MOSFETInventory
1282 Pcs New Original In Stock
N-Channel 600 V 15A (Tc) 156W (Tc) Through Hole TO-220
Quantity
Minimum 1
Minimum 1
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ICE15N60 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2064 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Datasheet & Documents
HTML Datasheet
ICE15N60-DG
Environmental & Export Classification
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
5133-ICE15N60
Standard Package
50
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
DiGi Electronics的產品品質一如既往的好，讓我使用非常放心。
Dec 02, 2025
Le rapport qualité-prix chez DiGi Electronics dépasse mes attentes. Fiabilité assurée.
Dec 02, 2025
They provide premium products at prices that are hard to beat.
Dec 02, 2025
DiGi Electronics maintains clear and upfront prices, making my shopping experience hassle-free.
Dec 02, 2025
My order was dispatched promptly and arrived ahead of the estimated delivery date.
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Frequently Asked Questions (FAQ)
What are the key design-in risks when using the ICE15N60 in a high-temperature PFC circuit, and how can thermal runaway be avoided?
When integrating the ICE15N60 into a power factor correction (PFC) stage operating at high ambient temperatures, a major risk is thermal runaway due to its positive temperature coefficient for Rds(on). Since the ICE15N60 has a maximum junction temperature of 150°C and a through-hole TO-220 package, inadequate heatsinking can quickly lead to overheating, especially when operating near its 156W (Tc) power dissipation limit. To mitigate this, ensure a low thermal resistance path to ambient with a properly sized heatsink and consider derating Id current above 85°C. Additionally, monitor Vgs stability—ensure gate drive does not dip below the 3.9V Vgs(th) max threshold under temp extremes to avoid partial conduction. Use a gate resistor to damp ringing and consider a negative turn-off bias in noisy environments to enhance reliability in continuous conduction mode PFC designs.
Can the ICE15N60 replace the STP16NK60ZFP in a flyback converter, and what are the critical parameter mismatches to check?
The ICE15N60 can serve as a functional substitute for the STP16NK60ZFP in flyback converters, but key differences must be evaluated. While both are 600V N-channel MOSFETs in TO-220 packages, the ICE15N60 has a higher Rds(on) of 250mΩ vs. 200mΩ in the STP16NK60ZFP, increasing conduction losses under similar loads. Also, the ICE15N60’s gate charge (Qg) is 59nC vs. 47nC—this higher drive demand may stress the controller’s gate driver, especially at switching frequencies above 50kHz. Check your existing gate driver’s current capability and adjust the gate resistor to prevent shoot-through and EMI issues. Additionally, verify the input capacitance (Ciss = 2064 pF) aligns with your snubber design to avoid voltage spikes. Thermal performance should be re-evaluated due to lower efficiency, particularly in sealed or high-temperature enclosures.
How does the 59nC gate charge of the ICE15N60 impact switching losses in a 100kHz hard-switched SMPS design?
The ICE15N60’s relatively high gate charge of 59nC @ 10V increases switching losses significantly in hard-switched topologies like boost or forward converters operating at 100kHz. Total gate drive power required is P = Qg × Vgs × f_sw = 59nC × 10V × 100kHz = 59mW just to drive the gate—this scales linearly with frequency. High Qg also extends turn-on/turn-off transition times, increasing overlap loss between voltage and current during switching. To mitigate this, use a dedicated gate driver IC (e.g., TC4420) capable of sourcing/sinking >1A peak current, minimize PCB trace inductance between driver and gate, and consider increasing Vgs slightly (within ±20V max) to achieve faster transitions. However, be cautious of increased EMI; a small gate resistor (10–22Ω) with a low-inductance layout is essential. For efficiency-critical designs, evaluate lower-Qg alternatives like the Infineon IPA60R650CFD (34nC) if thermals permit.
What reliability concerns should be addressed when using the ICE15N60 in industrial power supplies with frequent power cycling?
In industrial environments with frequent power cycling, the ICE15N60 is subject to thermal fatigue due to junction-to-case thermal expansion mismatch, especially when mounted without proper mechanical compliance. The TO-220 package is rigid, and repeated thermal cycling can crack solder joints or damage the die over time. To enhance long-term reliability, use a flexible mounting method (e.g., spring washers) and ensure uniform thermal paste application. Also, limit inrush current with NTC thermistors or active inrush control, as the ICE15N60’s 15A Id rating can be exceeded momentarily during startup, causing localized heating. Ensure Vgs is clamped during power-up sequencing—uncontrolled gate voltage can turn on the device prematurely under partial supply conditions. Finally, validate performance over the full -55°C to 150°C operating junction range, especially during cold starts where threshold voltage increases.
Is the ICE15N60 suitable for paralleling in high-current AC-DC applications, and what stability issues should be considered?
The ICE15N60 can be paralleled in high-current AC-DC designs, but careful attention is required to ensure current sharing and thermal stability. Since its Rds(on) has a positive temperature coefficient, it supports moderate parallel operation—devices sharing current will self-balance to some extent under thermal equilibrium. However, mismatches in PCB layout can induce unequal current distribution due to differing source inductance. To avoid oscillation or thermal runaway, use symmetrical, mirror-layout routing with Kelvin-source connections if possible, and include small gate resistors (e.g., 10Ω) on each device to dampen ringing. Also, ensure both units are thermally coupled (shared heatsink) to prevent one device from running hotter and drawing less current. Monitor each drain current during validation and avoid paralleling with different batch or aged MOSFETs due to parametric drift in Vth and Rds(on).
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
ICE15N60 CAD Models
IceMOS Technology ICE15N60 PCB symbols & footprints
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