3401 >
3401
Goford Semiconductor
MOSFET P-CH 30V 4.2A SOT-23
300117 Pcs New Original In Stock
P-Channel 30 V 4.2A (Tc) 1.2W (Tc) Surface Mount SOT-23-3
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3401 Goford Semiconductor
5.0 / 5.0 - (211 Ratings)

3401

Product Overview

12949102

DiGi Electronics Part Number

3401-DG
3401

Description

MOSFET P-CH 30V 4.2A SOT-23

Inventory

300117 Pcs New Original In Stock
P-Channel 30 V 4.2A (Tc) 1.2W (Tc) Surface Mount SOT-23-3
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 50 0.0155 0.7750
  • 500 0.0120 6.0000
  • 3000 0.0101 30.3000
  • 6000 0.0082 49.2000
  • 51000 0.0081 413.1000
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3401 Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Goford Semiconductor

Packaging Tape & Reel (TR)

Series TrenchFET®

Product Status Active

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 55mOhm @ 4A, 10V

Vgs(th) (Max) @ Id 1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 4.5 V

Vgs (Max) ±12V

Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 15 V

FET Feature Standard

Power Dissipation (Max) 1.2W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package SOT-23-3

Package / Case TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

HTML Datasheet

3401-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
3141-3401TR
3141-3401CT
4822-3401TR
3141-3401DKR
Standard Package
3,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
雲***處
Dec 02, 2025
5.0
他們的客服團隊每次都禮貌又專業,讓人感受到溫暖的服務。
夕暮***さやき
Dec 02, 2025
5.0
品質の安定性が素晴らしく、毎回期待通りの製品が届きます。
Blos***Trail
Dec 02, 2025
5.0
The clarity of pricing reflects their commitment to honesty and transparency.
Joyfu***urney
Dec 02, 2025
5.0
DiGi Electronics prioritizes customer support, making us feel valued.
Sta***zer
Dec 02, 2025
5.0
Excellent packaging that minimizes damage risk during shipping.
Wild***derer
Dec 02, 2025
5.0
Their reliable delivery schedule is a crucial advantage for my fast-paced electronics projects.
Midn***tMuse
Dec 02, 2025
5.0
I’ve found their online platform very accessible, with great cost benefits.
Wan***Wave
Dec 02, 2025
5.0
DiGi Electronics' prompt shipping has helped me avoid unnecessary delays in servicing my clients' devices.
Wan***Lust
Dec 02, 2025
5.0
Their commitment to excellence in support makes me trust their brand even more.
Cryst***arbor
Dec 02, 2025
5.0
Their pricing strategy makes high-quality electronics accessible to everyone.
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Frequently Asked Questions (FAQ)

Can the Goford Semiconductor 3401 P-Channel MOSFET safely replace an Infineon BSS84 in a low-side switching application with a 3.3V microcontroller drive, and what design risks should I consider?

The Goford Semiconductor 3401 can replace the Infineon BSS84 in low-side switching, but with caution: while both are P-channel SOT-23 MOSFETs rated for 30V, the 3401 has a higher Rds(on) of 55mΩ @ 10V (vs. BSS84’s ~80mΩ @ -4.5V), but critically, its Vgs(th) max is 1.3V, making it more suitable for 3.3V logic drive. However, at 3.3V Vgs, Rds(on) will be significantly higher than at 10V—check the transfer curves. Ensure your load current stays within thermal limits given the 1.2W package dissipation. Also verify gate drive strength; the 3401’s 9.5nC Qg is manageable but may require a gate resistor to dampen ringing in high-di/dt scenarios.

What thermal management strategies are necessary when using the Goford Semiconductor 3401 in a compact PCB layout with continuous 3A load current near its 4.2A rating?

At 3A continuous, the Goford Semiconductor 3401 will dissipate approximately 0.5W (P = I² × Rds(on) ≈ 3² × 0.055), approaching 42% of its 1.2W limit—requiring careful thermal design. Use a solid ground plane under the SOT-23-3 package and add thermal vias to inner or bottom copper layers to improve heat spreading. Avoid placing heat-sensitive components nearby. Monitor junction temperature: even with modest ambient temps, localized heating can push TJ toward 125°C+, reducing long-term reliability. Consider derating to 2.5A for industrial applications to maintain >50°C margin below Tj(max).

How does the Goford Semiconductor 3401 compare to the Diodes Incorporated DMG2301LK in terms of switching speed and EMI performance in a 100kHz buck converter?

The Goford Semiconductor 3401 has slightly higher input capacitance (950pF vs. DMG2301LK’s ~750pF) and comparable gate charge (9.5nC vs. ~8nC), resulting in marginally slower turn-on/off times. In a 100kHz buck converter, this increases switching losses and may elevate EMI, especially if dead-time control is tight. The 3401’s lower Vgs(th) helps with 3.3V compatibility, but the DMG2301LK offers better optimized switching behavior for high-frequency DC-DC. If EMI is critical, add a small gate resistor (2–10Ω) with the 3401 to control dv/dt and use snubbers if voltage spikes exceed 25V.

Is the Goford Semiconductor 3401 reliable for automotive 12V battery reverse-polarity protection given its MSL 3 rating and -55°C to 150°C operating range?

The Goford Semiconductor 3401 meets basic temperature requirements for automotive underhood use, but MSL 3 (168-hour floor life) demands strict handling—bake per J-STD-033 if exposed >168 hours post-reflow. More critically, in reverse-polarity protection, the body diode conducts during fault, potentially exceeding safe operating area (SOA) if input voltage surges (e.g., load dump >36V). The 30V Vdss leaves minimal margin; consider a TVS diode upstream. Also, verify long-term reliability under thermal cycling—SOT-23 packages are prone to solder joint fatigue in vibration-heavy environments. For mission-critical systems, prefer AEC-Q101 qualified alternatives like Vishay SI2301.

What layout precautions are essential when paralleling two Goford Semiconductor 3401 MOSFETs to achieve higher current capacity in a space-constrained design?

Paralleling Goford Semiconductor 3401 devices requires symmetrical PCB layout to ensure current sharing: place both devices close together with identical trace lengths from source to load and gate to driver. Use a common gate resistor (or individual 1–5Ω resistors) to prevent oscillation due to mismatched gate thresholds. Ensure shared thermal coupling—mount on the same copper pour—to balance temperatures, as Rds(on) decreases with heating, promoting thermal runaway in unbalanced setups. Even with matching, expect ~10–15% current imbalance; do not exceed 7A total (vs. 8.4A theoretical). Validate with thermal imaging under load, and avoid paralleling if fault tolerance isn’t designed-in.

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