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2302
Goford Semiconductor
MOSFET N-CH 20V 4.3A SOT-23
6469 Pcs New Original In Stock
N-Channel 20 V 4.3A (Tc) 1W (Tc) Surface Mount SOT-23-3
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5.0 / 5.0
- (236 Ratings)
2302
Product Overview
12949110
DiGi Electronics Part Number
2302-DGManufacturer
Goford Semiconductor
2302
Description
MOSFET N-CH 20V 4.3A SOT-23Inventory
6469 Pcs New Original In Stock
N-Channel 20 V 4.3A (Tc) 1W (Tc) Surface Mount SOT-23-3
Quantity
Minimum 1
Minimum 1
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2302 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
27mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
FET Feature
Standard
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet & Documents
Datasheets
Download 2302 Product Specification (PDF)
HTML Datasheet
2302-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Additional Information
Other Names
4822-2302TR
3141-2302CT
3141-2302DKR
3141-2302TR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
수시로 업데이트 되는 배송 정보와 친절한 상담 덕분에 만족스러웠어요.
Dec 02, 2025
最高のサポートと在庫管理により、長期的に信頼しています。
Dec 02, 2025
The packaging used minimal plastic and was fully recyclable, which I value greatly.
Dec 02, 2025
Order confirmation emails arrived instantly, reassuring me about my purchase.
Dec 02, 2025
Their customer service is truly exemplary—professional and attentive at every step.
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Frequently Asked Questions (FAQ)
What are the thermal design challenges when using the 2302 MOSFET from Goford Semiconductor in a high-ambient-temperature environment like 100°C?
The 2302 MOSFET has a maximum junction temperature of 150°C and a power dissipation rating of 1W at case temperature (Tc), which drops significantly in high ambient conditions. At 100°C ambient with limited airflow, the PCB must provide adequate copper pour (typically ≥100mm² on one layer) to improve thermal dissipation. Without proper layout, the junction may exceed safe limits even at moderate loads due to the SOT-23-3 package’s high thermal resistance. Use the RθJA to estimate temperature rise and ensure Id remains derated appropriately—consider 50% or more reduction from datasheet ratings under real-world conditions to maintain reliability.
Can the 2302 replace the AO3416 in a 3.3V microcontroller-driven load switch, and what are the risks in low-voltage turn-on?
Yes, the 2302 can generally replace the AO3416 in 3.3V logic applications since both support 4.5V and 2.5V Rds(on) specs. However, the 2302 has a maximum Vgs(th) of 1.1V at 250µA, which means it typically turns on well at 3.3V, but marginal circuits may see higher-than-expected on-resistance during startup or under process variation. To reduce risk, ensure the gate driver can source/sink sufficient current (check Qg of 10nC @ 4.5V) and consider adding a pull-down resistor (10kΩ) to prevent floating gate during MCU initialization. Also verify worst-case Id under battery-voltage droop conditions.
How does the 2302 from Goford Semiconductor perform in high-frequency switching circuits above 500kHz, and what layout practices minimize losses?
The 2302 has a gate charge (Qg) of 10nC @ 4.5V and input capacitance of 300pF @ 10V, making it moderately suitable for 500kHz–1MHz switching in low-power DC-DC converters. However, switching losses increase due to limited drive strength in the SOT-23-3 package. To optimize performance, minimize gate loop inductance using compact layout: keep gate trace short, use ground plane beneath, and consider a small gate resistor (5–10Ω) to damp oscillations. Also, ensure the gate driver can handle the capacitive load without excessive rise/fall times to prevent shoot-through in half-bridge configurations.
Is the 2302 a reliable drop-in replacement for the DMG2302UK in surface mount production, and are there any concerns with moisture sensitivity or reflow profiling?
The 2302 is a functional equivalent to the DMG2302UK with nearly identical electrical specs and SOT-23-3 packaging, enabling drop-in replacement. However, the 2302 has MSL 3 (168 hours), requiring handling within 7 days after moisture exposure unless re-baked. Use a JEDEC-standard reflow profile with peak temperature ≤260°C to avoid solder joint and package stress. Verify stencil design matches pad layout precisely to prevent tombstoning. Also confirm reel labeling and packaging match automated pick-and-place systems to avoid misassembly.
What are the reliability risks of operating the 2302 near its 20V Vdss limit in a 12V automotive load switch with inductive loads?
Operating the 2302 close to its 20V Vdss limit in a 12V automotive system risks avalanche breakdown during load dump or inductive kick events, which can exceed 24V momentarily. While the device lacks explicit avalanche energy rating, staying ≥20% below Vdss (i.e., <16V max) improves margin. Use a clamping diode (e.g., TVS) across the load to suppress transients. Additionally, monitor SOA (safe operating area) under dynamic conditions—pulse currents near 4.3A with high Vds can cause localized heating even if RMS current is within limits. Favor soft turn-off or snubbers for inductive loads to reduce stress.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
2302 CAD Models
Goford Semiconductor 2302 PCB symbols & footprints
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