MMFTP84 >
MMFTP84
Diotec Semiconductor
MOSFET P-CH 60V 130MA SOT23-3
1642 Pcs New Original In Stock
P-Channel 60 V 130mA (Ta) 250mW (Ta) Surface Mount SOT-23-3 (TO-236)
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MMFTP84 Diotec Semiconductor
5.0 / 5.0 - (323 Ratings)

MMFTP84

Product Overview

12944409

DiGi Electronics Part Number

MMFTP84-DG
MMFTP84

Description

MOSFET P-CH 60V 130MA SOT23-3

Inventory

1642 Pcs New Original In Stock
P-Channel 60 V 130mA (Ta) 250mW (Ta) Surface Mount SOT-23-3 (TO-236)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 1 0.0351 0.0351
  • 10 0.0279 0.2790
  • 30 0.0243 0.7290
  • 100 0.0217 2.1700
  • 500 0.0195 9.7500
  • 1000 0.0184 18.4000
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MMFTP84 Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Diotec Semiconductor

Packaging Tape & Reel (TR)

Series -

Product Status Active

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 60 V

Current - Continuous Drain (Id) @ 25°C 130mA (Ta)

Drive Voltage (Max Rds On, Min Rds On) 10V

Rds On (Max) @ Id, Vgs 10Ohm @ 130mA, 10V

Vgs(th) (Max) @ Id 2V @ 1mA

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V

FET Feature -

Power Dissipation (Max) 250mW (Ta)

Operating Temperature 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package SOT-23-3 (TO-236)

Package / Case TO-236-3, SC-59, SOT-23-3

Datasheet & Documents

HTML Datasheet

MMFTP84-DG

Environmental & Export Classification

RoHS Status Not applicable
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095

Additional Information

Other Names
4878-MMFTP84DKR
2796-MMFTP84TR
4878-MMFTP84TR
4878-MMFTP84CT
2796-MMFTP84TR-DG
Standard Package
3,000

Reviews

5.0/5.0-(Show up to 5 Ratings)
Qui***uest
Dec 02, 2025
5.0
I appreciate the careful attention to packaging details which ensures safe delivery.
Cryst***limpse
Dec 02, 2025
5.0
Very satisfied with the fast processing and quick shipping, which exceeded my expectations.
SeaBr***eVibes
Dec 02, 2025
5.0
Their support team is highly responsive and professional.
Radi***Wave
Dec 02, 2025
5.0
Delivery was swift, and the tracking process was transparent and easy to follow.
Harm***Path
Dec 02, 2025
5.0
Fast turnaround time and attentive follow-up—consistent quality.
Whispe***gWaves
Dec 02, 2025
5.0
The integrity and quality-focus of DiGi Electronics create a trustworthy reputation.
Sere***yFlow
Dec 02, 2025
5.0
Their pricing advantages are a major reason why we choose them as our main supplier.
Tranq***Trail
Dec 02, 2025
5.0
The interface is highly responsive, adapting well to different devices and screen sizes.
Moon***Dream
Dec 02, 2025
5.0
Reliable logistics means I get my orders faster and with fewer worries.
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Frequently Asked Questions (FAQ)

Can the MMFTP84 P-Channel MOSFET safely replace a Vishay SI2305 in a 5V logic-level power switching application, and what are the key risks if my gate drive is only 4.5V?

The MMFTP84 is not recommended as a direct replacement for the Vishay SI2305 in 4.5V gate drive scenarios. While both are P-channel MOSFETs in SOT-23 packages, the MMFTP84 has a higher Rds(on) of 10Ω (at Vgs = -10V) and a Vgs(th) max of 2V, meaning it may not fully turn on at 4.5V, leading to excessive conduction losses and thermal stress. In contrast, the SI2305 is optimized for logic-level operation with much lower Rds(on) at 4.5V. If you must use the MMFTP84 with 4.5V drive, ensure your load current is well below 50mA and include thermal monitoring—otherwise, consider a true logic-level FET like the Diodes Incorporated DMG2305UX or Infineon BSS84C.

What are the thermal reliability concerns when using the MMFTP84 in a compact PCB layout with no copper pour under the SOT-23-3 package?

The MMFTP84 has a maximum power dissipation of 250mW at 25°C ambient, but this assumes standard test conditions with minimal thermal resistance. Without a copper pour or thermal vias, the junction-to-ambient thermal resistance (RθJA) can exceed 300°C/W, causing the die temperature to rise rapidly even at modest loads. For example, at just 100mA continuous current and Rds(on) = 10Ω, power loss is ~100mW, which could push TJ above 100°C in still air—reducing long-term reliability. To mitigate risk, dedicate at least a 5mm x 5mm ground-connected copper area on the top layer and consider derating the current to ≤80mA in thermally constrained designs.

Is the MMFTP84 suitable for hot-swapping or inrush current control in a 48V industrial bus application, given its 60V Vdss rating?

No, the MMFTP84 is not suitable for 48V hot-swapping despite its 60V Vdss rating. The device lacks integrated protection features (e.g., slew-rate control, current limiting), and its low continuous drain current (130mA) and limited power handling (250mW) make it prone to failure during inrush events. Additionally, transient voltage spikes on industrial buses often exceed nominal levels, risking avalanche breakdown. For 48V hot-swap applications, use dedicated hot-swap controllers with external N-channel MOSFETs (e.g., TI TPS2491 with CSD19531Q5A) or select a robust P-channel FET with higher current/power ratings and avalanche energy specification, such as the Alpha & Omega AO3407.

How does the input capacitance (Ciss = 45pF) of the MMFTP84 affect switching performance in a 100kHz PWM motor drive circuit, and what gate driver considerations are needed?

With Ciss = 45pF at 25V, the MMFTP84 appears low-capacitance, but in a 100kHz PWM application, the actual gate charge (Qg)—not provided in the datasheet—is critical. Estimated Qg is likely >2nC, requiring a gate driver capable of sourcing/sinking several mA to avoid slow turn-on/off and cross-conduction losses. A weak microcontroller GPIO (e.g., 20mA max) will result in excessive switching times, increasing power dissipation beyond the 250mW limit. Use a dedicated gate driver like the Microchip MIC5018 or a push-pull BJT stage to ensure fast transitions. Also, include a 10kΩ pull-up resistor to maintain off-state during MCU startup.

Can I parallel two MMFTP84 MOSFETs to increase current handling in a battery protection circuit, and what layout precautions are necessary to avoid imbalance?

Paralleling MMFTP84 devices is not recommended due to its positive temperature coefficient of Rds(on) being weak at low currents and the lack of guaranteed parameter matching. At 130mA total load, current sharing can be highly uneven—one device may carry 90mA while the other carries 40mA—leading to localized heating and premature failure. Even with careful layout, the SOT-23-3 package’s thermal coupling is insufficient to self-balance. If higher current is needed, replace the MMFTP84 with a single, higher-current P-channel MOSFET like the ON Semiconductor NVTFS5C604NL (6A, 60V, DFN-8), which includes integrated current sharing features and better thermal performance.

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