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MMFTN170
Diotec Semiconductor
MOSFET N-CH 60V 500MA SOT23-3
18007 Pcs New Original In Stock
N-Channel 60 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3 (TO-236)
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5.0 / 5.0
- (311 Ratings)
MMFTN170
Product Overview
12944122
DiGi Electronics Part Number
MMFTN170-DGManufacturer
Diotec Semiconductor
MMFTN170
Description
MOSFET N-CH 60V 500MA SOT23-3Inventory
18007 Pcs New Original In Stock
N-Channel 60 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3 (TO-236)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
Warranty & Returns
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MMFTN170 Technical Specifications
Category
Transistors, FETs, MOSFETs, Single FETs, MOSFETs
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
300mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet & Documents
HTML Datasheet
MMFTN170-DG
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Additional Information
Other Names
2796-MMFTN170TR
4878-MMFTN170TR
4878-MMFTN170DKR
2796-MMFTN170TR-DG
4878-MMFTN170CT
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
Der Bestellvorgang ist selbsterklärend und führt Schritt für Schritt zum Abschluss.
Dec 02, 2025
Ich bin begeistert von der schnellen Bearbeitung meiner Bestellung.
Dec 02, 2025
The post-purchase support team quickly resolves any issues, ensuring a great experience.
Dec 02, 2025
DiGi Electronics' commitment to support helps us maintain a competitive edge.
Dec 02, 2025
Their support staff made me feel confident and cared for throughout the process.
Dec 02, 2025
The shipping exceeded my expectations, and the after-sales response was very professional.
Dec 02, 2025
The customer service team at DiGi Electronics is truly professional and always helpful.
Dec 02, 2025
The long-lasting performance of their gadgets means I can rely on them through demanding work sessions.
Dec 02, 2025
I’m always delighted with how quickly my orders arrive and how premium the products are.
Dec 02, 2025
The logistics tracking system is efficient, making my shopping experience excellent.
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Frequently Asked Questions (FAQ)
Can the Diotec MMFTN170 replace an Infineon BSS138 in a 3.3V logic-level switching application, and what are the risks if my microcontroller GPIO only supplies 3.3V?
The Diotec MMFTN170 is not ideal for direct 3.3V logic-level drive due to its Vgs(th) max of 3V and Rds(on) of 5Ω specified at 10V Vgs—performance degrades significantly below 4.5V. In contrast, the Infineon BSS138 has a lower threshold (Vgs(th) max 1.5V) and much lower Rds(on) at 2.5V–4.5V. Using the MMFTN170 with a 3.3V GPIO may result in incomplete turn-on, higher conduction losses, and thermal stress. If replacement is unavoidable, add a gate driver or level shifter to boost Vgs to ≥8V, or consider a true logic-level MOSFET like the Diodes Inc. DMN2041L instead.
What thermal management considerations should I account for when using the MMFTN170 in a compact PCB layout with limited copper pour area?
The MMFTN170 has a power dissipation limit of 300mW at 25°C ambient in free air (Ta), but this drops sharply with rising temperature or poor PCB thermal design. In tight layouts without adequate thermal vias or copper pour, junction temperature can exceed safe limits even below rated current. To mitigate risk, dedicate at least 100 mm² of 1 oz copper connected to the drain pad, use thermal vias under the package, and avoid placing heat-generating components nearby. Monitor actual Rds(on) increase with temperature—it roughly doubles at 100°C—which further increases losses in a thermal runaway scenario.
Is the MMFTN170 suitable for switching inductive loads like relay coils or small motors without additional protection circuitry?
No—the MMFTN170 lacks built-in avalanche or body diode robustness for inductive kickback. When switching inductive loads, voltage spikes can exceed the 60V Vdss rating, risking catastrophic failure. Always include a flyback diode (e.g., 1N4148 or BAT54) across the load, or use an RC snubber for faster transients. For motor applications, consider adding a TVS diode rated below 60V (e.g., SMAJ58A) to clamp transients. Without protection, repeated switching cycles will degrade the MOSFET, leading to premature short-circuit failure.
How does the MMFTN170 compare to the ON Semiconductor NTD20P06L in terms of safe operating area (SOA) for pulsed current applications, such as driving capacitive loads?
The MMFTN170 has a much smaller die and lower pulsed current capability than the NTD20P06L (which is in DPAK and rated for 20A continuous). While both are 60V N-channel MOSFETs, the MMFTN170’s SOA is severely limited in short-pulse, high-current scenarios due to its SOT-23 package and 300mW thermal limit. For capacitive load switching (e.g., inrush current), the MMFTN170 may fail thermally even if peak current stays under 500mA if pulses are frequent. The NTD20P06L handles such conditions better due to superior thermal mass. Use the MMFTN170 only for low-duty-cycle pulses (<1%) and verify SOA curves—avoid relying solely on continuous Id ratings for dynamic loads.
Can I parallel two MMFTN170 MOSFETs to increase current handling in a cost-sensitive design, and what are the reliability implications?
Paralleling MMFTN170 devices is not recommended due to mismatched threshold voltages and positive temperature coefficient of Rds(on) at low currents. At light loads, one device may carry disproportionate current, leading to localized heating and thermal imbalance. Even with matched Vgs(th), the SOT-23 package’s limited thermal coupling exacerbates current hogging. This increases the risk of one MOSFET failing short, cascading into system failure. For higher current needs, select a single MOSFET with adequate rating (e.g., Vishay SI2302 or Toshiba SSM3K335R) instead of paralleling MMFTN170s. If paralleling is unavoidable, add small source resistors (0.5–1Ω) to balance current, but expect reduced efficiency and added board complexity.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
MMFTN170 CAD Models
Diotec Semiconductor MMFTN170 PCB symbols & footprints
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