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NE68819-T1-A
CEL
NPN SILICON AMPLIFIER AND OSCILL
9710 Pcs New Original In Stock
RF Transistor NPN 6V 100mA 9GHz 125mW Surface Mount SC-75 (USM)
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5.0 / 5.0
- (182 Ratings)
NE68819-T1-A
Product Overview
12966863
DiGi Electronics Part Number
NE68819-T1-A-DGManufacturer
CEL
NE68819-T1-A
Description
NPN SILICON AMPLIFIER AND OSCILLInventory
9710 Pcs New Original In Stock
RF Transistor NPN 6V 100mA 9GHz 125mW Surface Mount SC-75 (USM)
Quantity
Minimum 1
Minimum 1
Purchase and inquiry
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365 - Day Quality Guarantee - Every part fully backed.
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NE68819-T1-A Technical Specifications
Category
Transistors, Bipolar (BJT), Bipolar RF Transistors
Packaging
Tape & Reel (TR)
Series
-
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
9GHz
Noise Figure (dB Typ @ f)
1.7dB @ 2GHz
Gain
8dB
Power - Max
125mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 3mA, 1V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75 (USM)
Datasheet & Documents
HTML Datasheet
NE68819-T1-A-DG
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.31.0000
Additional Information
Other Names
3923-NE68819-T1-ATR
Standard Package
3,000
Reviews
5.0/5.0-(Show up to 5 Ratings)
Dec 02, 2025
가격이 착해서 부담 없이 구매할 수 있고 포장도 환경을 생각하는 모습이 좋아요.
Dec 02, 2025
全てにおいて信頼できるサービスで、今後も利用させていただきたいです。
Dec 02, 2025
Their support team is available anytime I need assistance, providing excellent after-sales service.
Dec 02, 2025
The superior quality of their products at affordable prices keeps me loyal.
Dec 02, 2025
The sturdy packaging materials prevent any damage during long-distance shipping.
Dec 02, 2025
The after-sales team provides personalized support, making me feel well cared for.
Dec 02, 2025
Durability is outstanding; it feels solid and capable of enduring rough conditions.
Dec 02, 2025
Their after-service team is responsive and always ready to help.
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Frequently Asked Questions (FAQ)
Can the NE68819-T1-A be used as a drop-in replacement for the MMBT9116 in a 2GHz low-noise amplifier design, and what are the key risk factors to evaluate?
The NE68819-T1-A is not a direct replacement for the MMBT9116 due to significant differences in performance and structure. While both are NPN RF transistors in SC-75 packages, the NE68819-T1-A offers a higher transition frequency (9GHz vs. 5GHz) and better noise figure (1.7dB @ 2GHz), which may seem advantageous. However, the MMBT9116 has a higher collector-emitter breakdown voltage (10V vs. 6V), making it more robust in slightly higher voltage biasing scenarios. When replacing in an existing 2GHz LNA circuit, the NE68819-T1-A’s lower breakdown voltage increases risk of early breakdown or instability under transient voltage spikes. Additionally, biasing networks designed for MMBT9116 may overdrive NE68819-T1-A due to its optimized hFE at lower currents. Always verify stability, perform S-parameter modeling, and include a voltage derating margin when using NE68819-T1-A in such designs.
What are the main reliability concerns when using the NE68819-T1-A in a high-temperature RF oscillator operating near 125°C ambient?
When using the NE68819-T1-A in high-temperature environments such as 125°C ambient, thermal runaway is a key reliability risk despite its 150°C max junction temperature. The NE68819-T1-A has a relatively low maximum power dissipation (125mW) and operates in a small SC-75 package with limited thermal mass. Without proper PCB copper heatsinking or thermal vias, junction temperature can quickly exceed safe limits, degrading hFE and noise performance over time. Additionally, operation at high Ic (>50mA) in oscillator bias conditions increases self-heating risks. To mitigate, ensure the layout includes at least 2mm² of adjacent copper connected via thermal vias, derate power to 80mW or less, and avoid operation near maximum ratings for long-term reliability.
How does the 6V collector-emitter breakdown voltage limit the use of the NE68819-T1-A in 5V supply RF amplifiers, and what design margins should be applied?
The NE68819-T1-A’s 6V collector-emitter breakdown voltage (Vceo) presents a critical constraint in 5V supply RF amplifier designs. While 5V is below nominal breakdown, voltage transients or standing waves in impedance-mismatched RF paths can exceed 6V, risking avalanche breakdown and device failure. A minimum 50% voltage derating is recommended—limiting maximum supply to 3V—for robust operation. If 5V supplies are unavoidable, use a series base resistor and RF choke with clamping diodes to limit peak collector voltage. Also consider using the NE68819-T1-A only in low-gain pre-amplifier stages where gain compression and breakdown sensitivity are less severe.
Is the NE68819-T1-A suitable for use in wideband amplifier designs from 1–6GHz, and how does its gain flatness and stability factor affect performance?
The NE68819-T1-A can operate up to 9GHz (fT), making it viable for 1–6GHz wideband amplifiers, but gain flatness and stability must be carefully managed. Its typical 8dB gain at 2GHz drops significantly above 4GHz, leading to poor flatness without equalization. Additionally, the small package offers minimal isolation, increasing risk of input-output coupling and oscillation in wideband matching networks. To use NE68819-T1-A effectively, add resistive damping in base/gate feedback networks, implement neutralization if necessary, and simulate Rollett’s K-factor across the band to ensure K > 1. Prefer narrowband or compensated designs over ultra-wideband applications unless external stabilization techniques are employed.
What are the design-in risks of sourcing NE68819-T1-A given its obsolete status, and what long-term alternatives exist for new designs?
The obsolete status of the NE68819-T1-A poses significant design-in risks, including limited lifecycle support, potential supply discontinuation, and long-term obsolescence in production. While 9700 pcs are in stock, this stock may dry up unexpectedly. For new designs, consider actively supported alternatives like the BFR92A (9GHz fT, 10V Vceo) or MMBT2369ALT1G (10GHz fT, better availability). If continuing with NE68819-T1-A, secure lifetime buys, qualify a second source, and design for socket or footprint compatibility with SOT-23 equivalents. Avoid NE68819-T1-A in volume production unless replacement strategy and risk assessment have been formally approved.
Quality Assurance (QC)
DiGi ensures the quality and authenticity of every electronic component through professional inspections and batch sampling, guaranteeing reliable sourcing, stable performance, and compliance with technical specifications, helping customers reduce supply chain risks and confidently use components in production.
NE68819-T1-A CAD Models
CEL NE68819-T1-A PCB symbols & footprints
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