AONS21309C >
AONS21309C
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 70A 5X6 DFN
30122 Pcs New Original In Stock
P-Channel 30 V 70A (Tc) 125W (Tc) Surface Mount 8-DFN (5x6)
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AONS21309C Alpha & Omega Semiconductor Inc.
5.0 / 5.0 - (231 Ratings)

AONS21309C

Product Overview

12968548

DiGi Electronics Part Number

AONS21309C-DG
AONS21309C

Description

MOSFET P-CH 30V 70A 5X6 DFN

Inventory

30122 Pcs New Original In Stock
P-Channel 30 V 70A (Tc) 125W (Tc) Surface Mount 8-DFN (5x6)
Quantity
Minimum 1

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In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 3000 0.3295 988.5249
  • 6000 0.3104 1862.6688
  • 9000 0.2993 2694.0519
  • 30000 0.2988 8962.8750
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AONS21309C Technical Specifications

Category Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Packaging Tape & Reel (TR)

Series -

Product Status Active

FET Type P-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 30 V

Current - Continuous Drain (Id) @ 25°C 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 15 V

FET Feature -

Power Dissipation (Max) 125W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package 8-DFN (5x6)

Package / Case 8-PowerSMD, Flat Leads

Base Product Number AONS213

Datasheet & Documents

HTML Datasheet

AONS21309C-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
5202-AONS21309CTR
785-AONS21309CTR
785-AONS21309CCT
785-AONS21309CDKR
Standard Package
3,000

Alternative Parts

PART NUMBER
MANUFACTURER
QUANTITY AVAILABLE
DiGi PART NUMBER
UNIT PRICE
SUBSTITUTE TYPE
AON6405
Alpha & Omega Semiconductor Inc.
7078
AON6405-DG
0.2988
MFR Recommended
AON6407
Alpha & Omega Semiconductor Inc.
60388
AON6407-DG
0.2988
MFR Recommended

Reviews

5.0/5.0-(Show up to 5 Ratings)
ArcE***elVif
Dec 02, 2025
5.0
Une logistique sans faille, livraison dans le délai prévu.
Hirs***üter
Dec 02, 2025
5.0
Ich bin sehr zufrieden mit der prompten Reaktionsfähigkeit und der hervorragenden Qualität der Produkte bei DiGi Electronics.
Wald***atten
Dec 02, 2025
5.0
Ich schätze die hohe Langlebigkeit der Produkte. Trotz täglicher Nutzung funktionieren sie einwandfrei nach über einem Jahr.
Myst***rail
Dec 02, 2025
5.0
DiGi sets a high standard by making eco-friendly packaging accessible and affordable.
Radi***eRise
Dec 02, 2025
5.0
The quality of the item is superb, and it reached me sooner than I expected.
Celes***lHeart
Dec 02, 2025
5.0
Fast, reliable logistic services and attentive post-sale support make DiGi Electronics stand out.
Merr***adow
Dec 02, 2025
5.0
Their proactive communication and ample stock availability keep our operations running smoothly.
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Frequently Asked Questions (FAQ)

When designing a high-current DC-DC converter with the AONS21309C, what layout and thermal management strategies are critical to avoid premature failure due to thermal runaway or excessive junction temperature?

The AONS21309C, with its 125W power dissipation rating at case temperature (Tc), demands careful thermal design to prevent junction temperatures from exceeding 150°C. Use a large, multi-layer PCB with thick copper (2 oz or more) and multiple thermal vias under the exposed pad to efficiently transfer heat to inner ground planes or a secondary heatsink. Ensure minimal thermal resistance between the package and ambient by avoiding narrow traces and maximizing copper area connected to the drain. Monitor real-world ΔT under load—datasheet ratings assume ideal Tc = 25°C, which is rarely achievable in practice. Without proper thermal relief, localized hot spots can trigger thermal runaway, especially during repetitive switching cycles.

Can the AONS21309C reliably replace the Vishay SiZ340DT in a synchronous buck converter, and what gate drive adjustments might be needed due to differences in gate charge and input capacitance?

While the AONS21309C has similar voltage and current ratings to the Vishay SiZ340DT, direct drop-in replacement requires evaluation of gate drive compatibility. The AONS21309C has a higher Qg (200 nC @ 10V vs. ~140 nC for SiZ340DT) and significantly higher Ciss (7300 pF vs. ~4500 pF), which increases switching losses and demands a stronger gate driver. If your existing driver was sized for the SiZ340DT, it may struggle to achieve fast turn-on/off with the AONS21309C, leading to increased cross-conduction and EMI. Upgrade to a driver with ≥4A peak current capability and verify dead-time control to mitigate shoot-through risk in synchronous topologies.

What are the risks of operating the AONS21309C near its 30V Vdss limit in an automotive load-dump scenario, and how should the system be protected?

Operating the AONS21309C close to its 30V Vdss rating in automotive environments exposes it to transient overvoltage events like load dumps (which can exceed 40V). Even brief excursions beyond Vdss can cause avalanche breakdown or latent damage. To mitigate this, implement a TVS diode (e.g., SMAJ33A) clamped below 30V on the drain node, combined with input bulk capacitance and an LC filter. Additionally, consider derating the operating voltage to ≤24V in such applications. Relying solely on the MOSFET’s inherent robustness is risky—the AONS21309C lacks guaranteed unclamped inductive switching (UIS) performance, making external clamping essential for reliability.

How does the AONS21309C’s Rds(on) behavior at low Vgs (e.g., 4.5V) impact efficiency in battery-powered systems, and is it suitable for 5V logic-level drive without performance penalties?

The AONS21309C specifies Rds(on) = 3.8mΩ only at Vgs = 10V; at Vgs = 4.5V, Rds(on) increases significantly (typically 20–30% higher, per typical curves), raising conduction losses in 5V logic-driven systems like portable or IoT devices. In battery-powered applications where every mA counts, this elevated resistance reduces efficiency and increases heat generation. If your design must use 5V gate drive, either accept the efficiency trade-off or add a charge pump/bootstrapped driver to boost Vgs to 10V. Alternatively, consider a true logic-level P-MOSFET like the Infineon BSC030P03NS G, though it may sacrifice current capability.

Is the AONS21309C a viable long-term replacement for older D2PAK P-MOSFETs like the IRF4905 in industrial motor control boards, considering package thermal performance and solder joint reliability?

Replacing a through-hole IRF4905 with the surface-mount AONS21309C in motor control applications introduces thermal and mechanical trade-offs. While the AONS21309C offers lower Rds(on) and better high-frequency performance, its 8-DFN (5x6) package relies entirely on PCB copper for heat dissipation—unlike the IRF4905’s robust tab and leads. In high-vibration or thermal-cycling environments, the flat-lead DFN package is more prone to solder joint fatigue. Ensure IPC-7093-compliant assembly, use solder paste with high fatigue resistance (e.g., SAC305 with Ni doping), and validate thermal cycling performance. For mission-critical industrial systems, consider adding localized conformal coating or underfill to enhance mechanical reliability over the product lifecycle.

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